SLVS647J August 2006 – May 2025 TLE4275-Q1
PRODUCTION DATA
| PARAMETER | Test Conditions | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| VOUT | Output voltage | VIN = 6V to 28V, IOUT = 5mA to 400mA | 4.9 | 5 | 5.1 | V | |
| VIN = 6V to 40V, IOUT = 5mA to 200mA | 4.9 | 5 | 5.1 | ||||
| IO | Output current limit | 450 | 700 | 950 | mA | ||
| ΔVOUT(ΔIOUT) | Load regulation (for legacy chip) | IOUT = 5mA to 400mA | 15 | 30 | mV | ||
| Load regulation (for new chip) | IOUT = 5mA to 400mA, VIN = 6V | 15 | 30 | ||||
| ΔVOUT(ΔVIN) | Line regulation (for legacy chip) | VIN = 8V to 32V, IOUT = 5mA | –15 | 5 | 15 | mV | |
| Line regulation (for new chip) | VIN = 6V to 40V, IOUT = 5mA | –15 | 5 | 15 | |||
| IQ | Current consumption, IQ = IIN – IOUT (for legacy chip) | IOUT = 1mA | TJ = 25ºC | 150 | 200 | µA | |
| TJ ≤ 85ºC | 150 | 220 | |||||
| Current consumption, IQ = IIN – IOUT (for new chip) | TJ = 25ºC | 28 | 50 | ||||
| TJ ≤ 85ºC | 28 | 55 | |||||
| Current consumption, IQ = IIN – IOUT | IOUT = 250mA | 5 | 10 | mA | |||
| IOUT = 400mA | 12 | 22 | |||||
| VDO | Dropout voltage | IOUT = 300mA, VDO = VIN – VOUT | 250 | 500 | mV | ||
| VUVLO(RISING) | Rising input supply UVLO (for new chip) | VIN rising | 2.6 | 2.7 | 2.82 | V | |
| VUVLO(FALLING) | Falling input supply UVLO (for new chip) | VIN falling | 2.38 | 2.5 | 2.6 | V | |
| VUVLO(HYST) | V UVLO(IN) hysteresis (for new chip) | 230 | mV | ||||
| PSRR | Power-supply rejection ratio | frequency = 100Hz, Vr = 0.5 Vpp | 60 | dB | |||
| ΔVOUT/ΔT | Temperature output voltage drift | 0.5 | mV/K | ||||
| VRESET(OL) | RESET (PG) pin low-level output voltage (for legacy chip) | Rext ≥ 5kΩ, VOUT > 1V | 0.2 | 0.4 | V | ||
| RESET (PG) pin low-level output voltage (for new chip) | Rext ≥ 5kΩ, 1V ≤ VOUT < 4.5V | 0.2 | 0.4 | ||||
| VOUT(RT) | RESET (PG) switching threshold (for legacy chip) | 4.5 | 4.65 | 4.8 | V | ||
| RESET (PG) switching threshold (for new chip) | VOUT rising | 4.25 | 4.75 | ||||
| IROH | RESET output leakage current | VROH = 5V | 0 | 10 | µA | ||
| IDLY(CHARGE) | RESET charging current (for legacy chip) | Voltage at DELAY pin = 1V | 3 | 5.5 | 9 | µA | |
| RESET charging current (for new chip) | 1 | 1.5 | 2 | ||||
| VDELAY_U (TH) | RESET upper timing threshold (for legacy chip) | Voltage at DELAY pin rising | 1.5 | 1.8 | 2.2 | V | |
| RESET upper timing threshold (for new chip) | Voltage at DELAY pin rising | 1.17 | 1.21 | 1.25 | |||
| VDELAY_RL (TH) | RESET lower timing threshold (for legacy chip) | Voltage at DELAY pin rising | 0.2 | 0.4 | 0.7 | V | |
| TSD(SHUTDOWN) | Junction shutdown temperature (for new chip) | 175 | °C | ||||
| TSD(HYST) | Hysteresis of thermal shutdown (for new chip) | 20 | °C | ||||