SLVSDG9C March 2016 – June 2025 TPD1E0B04
PRODUCTION DATA
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| VRWM | Reverse stand-off voltage | IIO < 10nA | –3.6 | 3.6 | V | ||
| VBRF | Breakdown voltage, IO pin to GND | Measured as the maximum voltage before device snaps back into VHOLD voltage | 6.7 | V | |||
| VBRR | Breakdown voltage, GND to IO pin | Measured as the maximum voltage before device snaps back into VHOLD voltage | –6.7 | V | |||
| VHOLD | Holding voltage | IIO = 1mA, TA = 25°C | 5 | 5.7 | 6.5 | V | |
| VCLAMP | Clamping voltage | IPP = 1A, TLP, from IO to GND | 7.2 | V | |||
| IPP = 5A, TLP, from IO to GND | 10.1 | ||||||
| IPP = 16A, TLP, from IO to GND | 19 | ||||||
| IPP = 1A, TLP, from GND to IO | 7.2 | ||||||
| IPP = 5A, TLP, from GND to IO | 10.1 | ||||||
| IPP = 16A, TLP, from GND to IO | 19 | ||||||
| ILEAK | Leakage current, IO to GND | VIO = ±2.5V | 10 | nA | |||
| RDYN | Dynamic resistance | IO to GND | 1 | Ω | |||
| GND to IO | 1 | ||||||
| CL | Line capacitance | DPL Package | VIO = 0V, f = 1MHz, IO to GND, TA = 25°C | 0.13 | 0.15 | pF | |
| DPY Package | 0.15 | 0.18 | |||||