SLVSHD9A March 2025 – December 2025 DRV8001-Q1
PRODUCTION DATA
Bypass the PVDD pin to the GND pin using a low-ESR ceramic bypass capacitor CPVDD1. Place this capacitor as close to the PVDD pin as possible with a thick trace or ground plane connected to the GND pin. Additionally, bypass the PVDD pin using a bulk capacitor CPVDD2 rated for PVDD. This component can be electrolytic. This capacitance must be at least 10µF. Having the capacitance shared with the bulk capacitance for the external power MOSFETs is acceptable.
Bypass the DVDD pin to the DGND pin with CDVDD. Place this capacitor as close to the pin as possible and minimize the path from the capacitor to the DGND pin. If local bypass capacitors are already present on these power supplies in close proximity of the device to minimize noise, these additional components for DVDD are not required.
For the EC driver, place both the CECDRV and CECFB bypass capacitors to GND as close to the respective pins as possible.