SLVSHP9 July   2026 TPS544A28

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Related Products
  6. Pin Configuration and Functions
  7. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  D-CAP4 Control
      2. 7.3.2  Internal VCC LDO and Using External Bias On the VCC Pin
        1. 7.3.2.1 Powering the Device From a Single Bus
        2. 7.3.2.2 Powering the Device From a Split-Rail Configuration
      3. 7.3.3  Multifunction Select (MS1) Pin
      4. 7.3.4  Multifunction Select (MS2) Pin
      5. 7.3.5  PMBus® Address (ADR) Pin
      6. 7.3.6  Output Voltage Setting
        1. 7.3.6.1 Setting VBOOT and VOUT_SCALE_LOOP
        2. 7.3.6.2 Setting Output Voltage (Internal Feedback)
        3. 7.3.6.3 Setting Output Voltage (External Feedback)
      7. 7.3.7  Switching Frequency
      8. 7.3.8  Dynamic Voltage Slew Rate
      9. 7.3.9  Enable
      10. 7.3.10 Soft Start and Soft Stop
      11. 7.3.11 Power Good
      12. 7.3.12 Overvoltage and Undervoltage Protection
      13. 7.3.13 Remote Sense
      14. 7.3.14 Low-side MOSFET Zero-Crossing
      15. 7.3.15 Current Sense and Positive Overcurrent Protection
      16. 7.3.16 Low-side MOSFET Negative Current Limit
      17. 7.3.17 Output Voltage Discharge
      18. 7.3.18 UVLO Protection
      19. 7.3.19 Telemetry
      20. 7.3.20 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Auto-Skip (PFM) Eco-mode Light Load Operation
      2. 7.4.2 Forced Continuous-Conduction Mode
  9. Programming Registers
    1. 8.1 Register Map
      1. 8.1.1  OPERATION (Address = 01h)
      2. 8.1.2  ON_OFF_CONFIG (Address = 02h)
      3. 8.1.3  CLEAR_FAULTS (Address = 03h)
      4. 8.1.4  WRITE_PROTECT (Address = 10h)
      5. 8.1.5  STORE_USER_ALL (Address = 15h)
      6. 8.1.6  RESTORE_USER_ALL (Address = 16h)
      7. 8.1.7  CAPABILITY (Address = 19h)
      8. 8.1.8  VOUT_MODE (Address = 20h)
      9. 8.1.9  VOUT_COMMAND (Address = 21h)
      10.      57
      11. 8.1.10 VOUT_MARGIN_HIGH (Address = 25h)
      12. 8.1.11 VOUT_MARGIN_LOW (Address = 26h)
      13. 8.1.12 VOUT_TRANSITION_RATE (Address = 27h)
      14. 8.1.13 61
      15. 8.1.14 VOUT_SCALE_LOOP (Address = 29h)
      16. 8.1.15 FREQUENCY_SWITCH (Address = 33h)
      17. 8.1.16 64
      18. 8.1.17 VOUT_OV_FAULT_RESPONSE (Address = 41h)
      19. 8.1.18 VOUT_UV_FAULT_RESPONSE (Address = 45h)
      20. 8.1.19 IOUT_OC_FAULT_LIMIT (Address = 46h)
      21.      68
      22. 8.1.20 TON_DELAY (Address = 60h)
      23. 8.1.21 TON_RISE (Address = 61h)
      24.      71
      25. 8.1.22 TOFF_DELAY (Address = 64h)
      26. 8.1.23 TOFF_FALL (Address = 65h)
      27. 8.1.24 STATUS_BYTE (Address = 78h)
      28. 8.1.25 STATUS_WORD (Address = 79h)
      29. 8.1.26 STATUS_CML (Address = 7Eh)
      30. 8.1.27 STATUS_MFR_SPECIFIC (Address = 80h)
      31. 8.1.28 READ_VOUT (Address = 8Bh)
      32. 8.1.29 READ_IOUT (Address = 8Ch)
      33. 8.1.30 READ_TEMP1 (Address = 8Dh)
      34. 8.1.31 PMBUS_REVISION (Address = 98h)
      35. 8.1.32 MFR_ID (Address = 99h)
      36. 8.1.33 MFR_MODEL (Address = 9Ah)
      37. 8.1.34 MFR_REVISION (Address = 9Bh)
      38. 8.1.35 IC_DEVICE_ID (Address = ADh)
      39. 8.1.36 IC_DEVICE_REV (Address = AEh)
      40. 8.1.37 SYS_CFG_USER1 (Address = D1h)
      41. 8.1.38 PASSKEY (Address = D2h)
      42. 8.1.39 COMP (Address = D4h)
      43.      90
      44. 8.1.40 VBOOT (Address = D5h)
      45.      92
      46. 8.1.41 NVM_CHECKSUM (Address = D9h)
      47. 8.1.42 FUSION_ID0 (Address = FCh)
      48. 8.1.43 FUSION_ID1 (Address = FDh)
  10. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Output Voltage Setting Point
        2. 9.2.2.2 Choose the Switching Frequency
        3. 9.2.2.3 Choose the Inductor
        4. 9.2.2.4 Choose the Output Capacitor
        5. 9.2.2.5 Choose the Input Capacitors (CIN)
        6. 9.2.2.6 VCC Bypass Capacitor
        7. 9.2.2.7 BOOT Capacitor
        8. 9.2.2.8 PG Pullup Resistor
        9. 9.2.2.9 Choose the PMBus® Address and Fault Recovery Mode
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
      3. 9.4.3 Thermal Performance On TI EVM
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

D-CAP4 Control

The device uses D-CAP4 control architecture to achieve fast load transient response while maintaining ease-of-use. This control system incorporates an internal ripple generation network that emulates inductor current ripple and integrates with the voltage feedback signal, enabling both rapid response and precise output voltage regulation. D-CAP4 allows the use of very low-ESR output capacitors, including multi-layered ceramic capacitors (MLCC) and low-ESR polymer capacitors, without requiring external current sensing, ripple injection, or voltage compensation networks.

Unlike earlier D-CAP2 and D-CAP3 architectures, D-CAP4 employs a fixed ramp amplitude each switching cycle and a forward gain path to improve transient response and reduce pulse frequency jitter, while an error amplifier provides high DC set-point accuracy. A key advantage of D-CAP4 is the ability to minimize loop gain variation across the entire output voltage range, enabling consistent fast load transient response with a single ramp setting. The R-C time-constant of the internal ramp circuit sets the zero frequency of the ramp, similar to other R-C based internal ramp generation architectures. This reduced variation in loop gain eliminates the need for a feedforward capacitor to optimize transient response. Additionally, the fixed ramp amplitude architecture eliminates loop gain variation across input voltage.

The device offers four user-selectable compensation settings through (D4h) COMP. When internal reference DAC target voltages are ≥750mV, the device automatically increases the ramp amplitudes to compensate for higher effective loop gain and maintain stable setpoints for a wider range of reference voltages. SEL_SUMCOMP in (D4h) COMP shows the state of this compensation adjustment. Users can force SEL_SUMCOMP high or low by writing to the override bits in (D4h) COMP. For internal feedback, estimate VREF_DAC by multiplying the output voltage by (29h) VOUT_SCALE_LOOP (for example, VOUT = 1.6V and VOUT_SCALE_LOOP = 0.5 gives VREF_DAC of 800mV). When using external feedback, VREF_DAC equals the voltage on the VOS/FB pin. Note that the VREF_DAC target only updates when the output is disabled, so crossing the 750mV threshold with (21h) VOUT_COMMAND while the device is regulating does not change the state of SEL_SUMCOMP. Table 7-1 details the available loop compensation settings accessible through the digital interface.

Table 7-1 COMP Enumeration List
Ramp SEL_RAMP (b) Relative Effective Ramp Amplitude
SEL_SUMCOMP = 0b SEL_SUMCOMP = 1b
RAMP1 00 2.1× 3.3×
RAMP2 01 1.6× 2.4×
RAMP3 10 1.4× 2.0×
RAMP4 11 1.5×

RAMP2 and RAMP3 result in similar loop bandwidth as the ramp amplitudes are similar. The primary difference between these two settings is the ramp zero frequency. The lower ramp zero location for RAMP3 increases phase margin. However, RAMP2 provides faster transient response than RAMP3 because RAMP2 gives higher gain across the entire frequency range due to higher ramp zero location with comparable ramp amplitudes. For most applications, RAMP3 must be used instead of RAMP2. RAMP3 can be used to provide phase boost in applications using an L-C whose double pole frequency allows using RAMP4 but where minimizing jitter is more important than faster transient response. TI recommends using the calculator in the technical documentation section of the TPS544A28 Product Page when evaluating compensation settings and output L-C selection.

For any control topologies supporting no external compensation, there is a minimum range, maximum range, or both, for the output filter the control topologies can support. The output filter used for a typical buck converter is a low-pass L-C circuit. This L-C filter has double pole that Equation 1 shows.

Equation 1. fP=12π×LOUT×COUT

At low frequencies, the overall loop gain is set by the output set-point resistor divider network and the internal gain of the device. The low frequency L-C double pole has a 180-degree drop in phase. At the output filter frequency, the gain rolls off at a –40dB per decade rate and the phase drops rapidly. The internal ripple generation network introduces a high-frequency zero that reduces the gain roll off from –40dB to –20dB per decade and increases the phase by 90 degrees per decade above the zero frequency.

The inductor and capacitor selected for the output filter must be such that the fP double pole of Equation 1 is located no higher than the value calculated by using the scaling constants in Table 7-2. Increasing VREF scales down the fP(MAX) because the internal DCAP-4 ramp amplitude remains constant. As the reference voltage increases, the relative ramp amplitude decreases, also decreasing the fP(MAX).

Equation 2. f p ( M A X ) = 10 3 × K f _ L C V R E F _ D A C
Table 7-2 Calculation Constant for Maximum L-C Double Pole
fSW (kHz) MAXIMUM L-C DOUBLE POLE CONSTANT Kf_LC
SEL_SUMCOMP = 0b0 SEL_SUMCOMP = 0b1
RAMP1 RAMP2 RAMP3 RAMP4 RAMP1 RAMP2 RAMP3 RAMP4
500 7.3 6.4 6.0 5.1 8.7 7.6 7.1 6.1
600 8.8 7.7 7.2 6.1 10.4 9.1 8.5 7.3
800 11.7 10.2 9.6 8.2 13.9 12.2 11.4 9.8
1000 14.6 12.8 12.0 10.2 17.4 15.2 14.2 12.2
1200 17.5 15.4 14.4 12.2 20.9 18.2 17.0 14.6
1400 20.4 17.9 16.8 14.3 24.4 21.3 19.9 17.1

An L-C double pole frequency that violates these guidelines for each setting can be possible, but must be validated in the application with measurements.

Note: For applications using dynamic voltage scaling through (21h) VOUT_COMMAND, TI recommends confirming the output L-C double pole frequency satisfies Equation 1 for all target voltages.

After identifying the application requirements, the output inductance is typically designed so the inductor peak-to-peak ripple current is approximately between 15% and 40% of the maximum output current in the application. Choosing very small output capacitance leads to a high frequency L-C double pole which causes the overall loop gain to stay high until the L-C double pole frequency. Given the zero from the internal ripple generation network is a relatively high frequency as well, the loop with very small output capacitance can have too high of a crossover frequency which can cause instability. In general, where reasonable (or smaller) output capacitance is desired, output ripple requirement and load transient requirement can be used to determine the necessary output capacitance for stable operation.

If MLCCs are used, consider the derating characteristics to determine the final output capacitance for the design. For example, when using an MLCC with specifications of 10µF, X5R and 6.3V, the derating by DC bias and AC bias are 80% and 50%, respectively. The effective derating is the product of these two factors, which in this case is 40% and 4µF. Consult with capacitor manufacturers for specific characteristics of the capacitors to be used in the application.

As a simplified rule, if an output capacitor with an ESR zero that is less than 10 × the L-C double pole frequency, TI recommends to ignore when calculating the L-C double pole frequency for stability purposes. The L-C double pole frequency must be recalculated using only the low ESR MLCCs. For more accurate analysis when using mixed type output capacitors, TI recommends simulations or measurements.

For the maximum output capacitance recommendation, select the inductor and capacitor values so that the L-C double pole frequency is no less than 1/100th of the switching frequency. With this starting point, verify the small signal response on the board and confirm that the phase margin at the loop crossover is greater than 45 degrees. The actual maximum output capacitance can go higher as long as phase margin is greater than 45 degrees. However, a small signal measurement (Bode plot) must be done to confirm the design.

For large output filters with an L-C double pole near 1/100th of the operating frequency, additional phase boost can be required. A feedforward capacitor placed in parallel with RFB_HS can boost the phase when using external feedback. When using internal feedback, the user can adjust the internal loop response with SEL_LC_H in SYS_CFG_USER1. In practice, this can help boost phase margin for large output filters. See also the Optimizing Transient Response of Internally Compensated dc-dc Converters With Feedforward Capacitor application note.

Besides boosting the phase, a feedforward capacitor feeds more VOUT node information into the FB node through AC coupling. This feedforward during load transient event enables faster response of the control loop to a VOUT deviation. However, this feedforward during steady state operation also feeds more VOUT ripple and noise into FB. High ripple and noise on FB usually leads to more jitter, or even double-pulse behavior. To determine the final feedforward capacitor value impacts to phase margin, consider load transient performance, ripple, and noise on FB. TI recommends using frequency analysis equipment to measure the crossover frequency and the phase margin.

TPS544A28 Simulated Gain
            vs Ramp Setting with VOUT = 0.5V and SEL_SUMCOMP = 0
VIN=12V VCC = Internal FSW = 800kHz
LOUT = 1μH COUT = 5 × 47μF Load = 250mΩ
Figure 7-1 Simulated Gain vs Ramp Setting with VOUT = 0.5V and SEL_SUMCOMP = 0
TPS544A28 Simulated Gain
            vs VREF with RAMP3 and SEL_SUMCOMP = 1
VIN=12V VCC = Internal FSW = 800kHz
LOUT = 1μH COUT = 5 × 47μF Load = 250mΩ
Figure 7-3 Simulated Gain vs VREF with RAMP3 and SEL_SUMCOMP = 1
TPS544A28 Simulated Phase
            vs Ramp Setting with VOUT = 0.5V and SEL_SUMCOMP = 0
VIN=12V VCC = Internal FSW = 800kHz
LOUT = 1μH COUT = 5 × 47μF Load = 250mΩ
Figure 7-2 Simulated Phase vs Ramp Setting with VOUT = 0.5V and SEL_SUMCOMP = 0
TPS544A28 Simulated Phase
            vs VREF with RAMP3 and SEL_SUMCOMP = 1
VIN=12V VCC = Internal FSW = 800kHz
LOUT = 1μH COUT = 5 × 47μF Load = 250mΩ
Figure 7-4 Simulated Phase vs VREF with RAMP3 and SEL_SUMCOMP = 1