SLVSJF0A October   2025  – July 2026 DRV7167

ADVANCE INFORMATION  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information_DRV7167A
    5. 5.5 Electrical Characteristics
  7. Typical Characteristics
  8. Parameter Measurement Information
    1. 7.1 Propagation Delay and Mismatch Measurement
    2. 7.2 Slew Rate Measurement
  9. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Control Inputs
        1. 8.3.1.1 EN/FLT Control
      2. 8.3.2  Dead Time Setting in Single PWM Mode
      3. 8.3.3  Start-up and UVLO
      4. 8.3.4  Synchronous Bootstrap
      5. 8.3.5  Level Shift
      6. 8.3.6  Zero Voltage Detection (ZVD) Reporting
      7. 8.3.7  Slew Rate Control
      8. 8.3.8  Fault Indication
      9. 8.3.9  Overcurrent Protection (OCP)
      10. 8.3.10 Over Temperature Detection (OTD)
    4. 8.4 Device Functional Modes
  10. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Bootstrap Capacitor
        2. 9.2.2.2 GVDD Bypass Capacitor
        3. 9.2.2.3 Power Dissipation
      3. 9.2.3 Application Curves
        1. 9.2.3.1 Slew rate plots
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Examples
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information
    1. 12.1 Package Information
      1. 12.1.1 Mechanical Data

Bootstrap Capacitor

The bootstrap capacitor provides the gate charge for the high-side gate drive, dc bias power for BOOT UVLO circuit, and the reverse recovery charge of the bootstrap diode. The required bypass capacitance can be calculated using Equation 6.

Equation 6. CBST = (QG + QRR + IBOOT * tON(max)) / ΔV

where

  • IBOOT is the quiescent current of the high-side gate driver
  • tON(maximum) is the maximum on-time period of the high-side gate driver
  • QRR is the reverse recovery charge of the bootstrap diode
  • QG is the gate charge of the high-side GaN FET
  • ΔV is the permissible ripple in the bootstrap capacitor (< 100 mV, typical)

A 0.22-µF, 16-V, 0402 ceramic capacitor is suitable for most applications. Place the bootstrap capacitor as close as possible to the BOOT and HS pins.