SLVSK12 October   2025 DRV8311-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 SPI Timing Requirements
    7. 6.7 SPI Secondary Device Mode Timings
    8. 6.8 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Output Stage
      2. 7.3.2  Control Modes
        1. 7.3.2.1 6x PWM Mode (DRV8311S-Q1 and DRV8311H-Q1 variants only)
        2. 7.3.2.2 3x PWM Mode (DRV8311S-Q1 and DRV8311H-Q1 variants only)
        3. 7.3.2.3 PWM Generation Mode (DRV8311S-Q1 and DRV8311P-Q1 Variants)
      3. 7.3.3  Device Interface Modes
        1. 7.3.3.1 Serial Peripheral Interface (SPI)
        2. 7.3.3.2 Hardware Interface
      4. 7.3.4  AVDD Linear Voltage Regulator
      5. 7.3.5  Charge Pump
      6. 7.3.6  Slew Rate Control
      7. 7.3.7  Cross Conduction (Dead Time)
      8. 7.3.8  Propagation Delay
      9. 7.3.9  Pin Diagrams
        1. 7.3.9.1 Logic Level Input Pin (Internal Pulldown)
        2. 7.3.9.2 Logic Level Input Pin (Internal Pullup)
        3. 7.3.9.3 Open Drain Pin
        4. 7.3.9.4 Push Pull Pin
        5. 7.3.9.5 Four Level Input Pin
      10. 7.3.10 Current Sense Amplifiers
        1. 7.3.10.1 Current Sense Amplifier Operation
        2. 7.3.10.2 Current Sense Amplifier Offset Correction
      11. 7.3.11 Protections
        1. 7.3.11.1 VM Supply Undervoltage Lockout (NPOR)
        2. 7.3.11.2 Under Voltage Protections (UVP)
        3. 7.3.11.3 Overcurrent Protection (OCP)
          1. 7.3.11.3.1 OCP Latched Shutdown (OCP_MODE = 010b)
          2. 7.3.11.3.2 OCP Automatic Retry (OCP_MODE = 000b or 001b)
          3. 7.3.11.3.3 OCP Report Only (OCP_MODE = 011b)
          4. 7.3.11.3.4 OCP Disabled (OCP_MODE = 111b)
        4. 7.3.11.4 Thermal Protections
          1. 7.3.11.4.1 Thermal Warning (OTW)
          2. 7.3.11.4.2 Thermal Shutdown (OTSD)
    4. 7.4 Device Functional Modes
      1. 7.4.1 Functional Modes
        1. 7.4.1.1 Sleep Mode
        2. 7.4.1.2 Operating Mode
        3. 7.4.1.3 Fault Reset (CLR_FLT or nSLEEP Reset Pulse)
    5. 7.5 SPI Communication
      1. 7.5.1 Programming
        1. 7.5.1.1 SPI and tSPI Format
  9. 8 DRV8311-Q1 Registers
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Three-Phase Brushless-DC Motor Control
        1. 9.2.1.1 Detailed Design Procedure
          1. 9.2.1.1.1 Motor Voltage
        2. 9.2.1.2 Driver Propagation Delay and Dead Time
        3. 9.2.1.3 Delay Compensation
        4. 9.2.1.4 Current Sensing and Output Filtering
        5. 9.2.1.5 Application Curves
    3. 9.3 Three Phase Brushless-DC tSPI Motor Control
      1. 9.3.1 Detailed Design Procedure
    4. 9.4 Alternate Applications
    5. 9.5 Power Supply Recommendations
      1. 9.5.1 Bulk Capacitance
    6. 9.6 Layout
      1. 9.6.1 Layout Guidelines
      2. 9.6.2 Layout Example
      3. 9.6.3 Thermal Considerations
        1. 9.6.3.1 Power Dissipation and Junction Temperature Estimation
  11. 10Device and Documentation Support
    1. 10.1 Support Resources
    2. 10.2 Trademarks
    3. 10.3 Electrostatic Discharge Caution
    4. 10.4 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

9.6.1 Layout Guidelines

The bulk capacitor are placed to minimize the distance of the high-current path through the motor driver device. The connecting metal trace widths are as wide as possible, and numerous vias are used when connecting PCB layers. These practices minimize inductance and allow the bulk capacitor to deliver high current.

Small-value capacitors are ceramic, and placed closely to device pins including, AVDD, charge pump, CSAREF, VINAVDD and VM.

The high-current device outputs uses wide metal traces.

To reduce noise coupling and EMI interference from large transient currents into small-current signal paths, grounding is partitioned between PGND and AGND. TI recommends connecting all non-power stage circuitry (including the thermal pad) to AGND to reduce parasitic effects and improve power dissipation from the device. Maintain grounds are connected through net-ties to reduce voltage offsets and maintain gate driver performance. A common ground plane can also be used for PGND and AGND to minimize inductance in the grounding, but TI recommends to place motor switching outputs as far away from analog and digital signals so motor noise does not couple into the analog and digital circuits.

The device thermal pad is soldered to the PCB top-layer ground plane. Multiple vias are used to connect to a large bottom-layer ground plane. The use of large metal planes and multiple vias helps dissipate the heat that is generated in the device.

To improve thermal performance, maximize the ground area that is connected to the thermal pad ground across all possible layers of the PCB. Using thick copper pours can lower the junction-to-air thermal resistance and improve thermal dissipation from the die surface.