SLVSLM8 May   2026 BQ78709-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information BQ78709-Q1
    5. 6.5  Supply Current
    6. 6.6  Digital I/O
    7. 6.7  REGOUT LDO
    8. 6.8  Voltage References
    9. 6.9  Coulomb Counter
    10. 6.10 Coulomb Counter Digital Filter
    11. 6.11 Current Wake Detector
    12. 6.12 Analog-to-Digital Converter
    13. 6.13 Cell Voltage Measurement Accuracy
    14. 6.14 Cell Balancing
    15. 6.15 Internal Temperature Sensor
    16. 6.16 Thermistor Measurement
    17. 6.17 Hardware Overtemperature Detector
    18. 6.18 Internal Oscillator
    19. 6.19 Charge and Discharge FET Drivers
    20. 6.20 Comparator-Based Protection Subsystem
    21. 6.21 Timing Requirements - I2C Interface, 100kHz Mode
    22. 6.22 Timing Requirements - I2C Interface, 400kHz Mode
    23. 6.23 Timing Diagram
    24. 6.24 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Device Configuration
      1. 7.3.1 Commands and Subcommands
      2. 7.3.2 Configuration Using OTP or Registers
      3. 7.3.3 Device Security
    4. 7.4 Device Hardware Features
      1. 7.4.1  Voltage ADC
      2. 7.4.2  Coulomb Counter and Digital Filters
      3. 7.4.3  Protection FET Drivers
      4. 7.4.4  Voltage References
      5. 7.4.5  Multiplexer
      6. 7.4.6  LDOs
      7. 7.4.7  Standalone Versus Host Interface
      8. 7.4.8  ALERT Pin Operation
      9. 7.4.9  Low Frequency Oscillator
      10. 7.4.10 I2C Serial Communications Interface
    5. 7.5 Measurement Subsystem
      1. 7.5.1 Voltage Measurement
        1. 7.5.1.1 Voltage ADC Scheduling
        2. 7.5.1.2 Unused VC Pins
        3. 7.5.1.3 General Purpose ADCIN Functionality
      2. 7.5.2 Current Measurement and Charge Integration
      3. 7.5.3 Internal Temperature Measurement
      4. 7.5.4 Thermistor Temperature Measurement
      5. 7.5.5 Factory Trim and Calibration
    6. 7.6 Protection Subsystem
      1. 7.6.1 Protections Overview
      2. 7.6.2 Primary Protections
      3. 7.6.3 CHG Detector
      4. 7.6.4 Cell Open-Wire Protection
      5. 7.6.5 Diagnostic Checks
    7. 7.7 Cell Balancing
    8. 7.8 Device Operational Modes
      1. 7.8.1 Overview of Operational Modes
      2. 7.8.2 NORMAL Mode
      3. 7.8.3 SLEEP Mode
      4. 7.8.4 DEEPSLEEP Mode
      5. 7.8.5 SHUTDOWN Mode
      6. 7.8.6 CONFIG_UPDATE Mode
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Performance Plot
      4. 8.2.4 Random Cell Connection Support
      5. 8.2.5 Startup Timing
      6. 8.2.6 FET Driver Turn-Off
      7. 8.2.7 Usage of Unused Pins
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

6.11 Current Wake Detector

Typical values stated where TA = 25°C and VBAT = 25.9V, min/max values stated where TA = -40°C to 125°C and VBAT = 3V to 38.5V (unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
VWAKE_THRWakeup voltage threshold (VSRP – VSRN), setting = 1, positive threshold (charging current) (1)TA = -40°C to 125°C.  Measured using averaged data to remove effects of noise.8325615µV
VWAKE_THRWakeup voltage threshold (VSRP – VSRN), setting = 2, positive threshold (charging current) (1)TA = -40°C to 125°C.  Measured using averaged data to remove effects of noise.5138441140µV
VWAKE_THRWakeup voltage threshold (VSRP – VSRN), setting = 3, positive threshold (charging current) (1)TA = -40°C to 125°C.  Measured using averaged data to remove effects of noise.101813671668µV
VWAKE_THRWakeup voltage threshold (VSRP – VSRN), setting = 4, positive threshold (charging current) (1)TA = -40°C to 125°C.  Measured using averaged data to remove effects of noise.128518792423µV
VWAKE_THRWakeup voltage threshold (VSRP – VSRN), setting = 5, positive threshold (charging current) (1)TA = -40°C to 125°C.  Measured using averaged data to remove effects of noise.185023892907µV
VWAKE_THRWakeup voltage threshold (VSRP – VSRN), setting = 6, positive threshold (charging current) (1)TA = -40°C to 125°C.  Measured using averaged data to remove effects of noise.237529163425µV
VWAKE_THRWakeup voltage threshold (VSRP – VSRN), setting = 7, positive threshold (charging current) (1)TA = -40°C to 125°C.  Measured using averaged data to remove effects of noise.283334174005µV
VWAKE_THRWakeup voltage threshold (VSRP – VSRN), setting = 8, positive threshold (charging current) (1)TA = -40°C to 125°C.  Measured using averaged data to remove effects of noise.318439414698µV
VWAKE_THRWakeup voltage threshold (VSRP – VSRN), setting = 9, positive threshold (charging current) (1)TA = -40°C to 125°C.  Measured using averaged data to remove effects of noise.365044705233µV
VWAKE_THRWakeup voltage threshold (VSRP – VSRN), setting = 10, positive threshold (charging current) (1)TA = -40°C to 125°C.  Measured using averaged data to remove effects of noise.413649905799µV
VWAKE_THRWakeup voltage threshold (VSRP – VSRN), setting = 1, negative threshold (discharging current) (1)TA = -40°C to 125°C.  Measured using averaged data to remove effects of noise.-739-600-461µV
VWAKE_THRWakeup voltage threshold (VSRP – VSRN), setting = 2, negative threshold (discharging current) (1)TA = -40°C to 125°C.  Measured using averaged data to remove effects of noise.-1236-1101-949µV
VWAKE_THRWakeup voltage threshold (VSRP – VSRN), setting = 3, negative threshold (discharging current) (1)TA = -40°C to 125°C.  Measured using averaged data to remove effects of noise.-1759-1586-1413µV
VWAKE_THRWakeup voltage threshold (VSRP – VSRN), setting = 4, negative threshold (discharging current) (1)TA = -40°C to 125°C.  Measured using averaged data to remove effects of noise.-2273-2074-1871µV
VWAKE_THRWakeup voltage threshold (VSRP – VSRN), setting = 5, negative threshold (discharging current) (1)TA = -40°C to 125°C.  Measured using averaged data to remove effects of noise.-2786-2570-2349µV
VWAKE_THRWakeup voltage threshold (VSRP – VSRN), setting = 6, negative threshold (discharging current) (1)TA = -40°C to 125°C.  Measured using averaged data to remove effects of noise.-3324-3067-2793µV
VWAKE_THRWakeup voltage threshold (VSRP – VSRN), setting = 7, negative threshold (discharging current) (1)TA = -40°C to 125°C.  Measured using averaged data to remove effects of noise.-3841-3557-3269µV
VWAKE_THRWakeup voltage threshold (VSRP – VSRN), setting = 8, negative threshold (discharging current) (1)TA = -40°C to 125°C.  Measured using averaged data to remove effects of noise.-4364-4049-3738µV
VWAKE_THRWakeup voltage threshold (VSRP – VSRN), setting = 9, negative threshold (discharging current) (1)TA = -40°C to 125°C.  Measured using averaged data to remove effects of noise.-4901-4543-4192µV
VWAKE_THRWakeup voltage threshold (VSRP – VSRN), setting = 10, negative threshold (discharging current) (1)TA = -40°C to 125°C.  Measured using averaged data to remove effects of noise.-5419-5038-4643µV
tWAKEMeasurement interval2.44ms
(1) Specified by a combination of characterization and production test