SLVSMQ4 September   2026 TPS7H5101-SEP

ADVANCE INFORMATION  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  D-CAP+
        1. 7.3.1.1 Load Transients
        2. 7.3.1.2 On-Time Control
        3. 7.3.1.3 Switching Frequency
        4. 7.3.1.4 Droop Regulation
        5. 7.3.1.5 Ramp Compensation
        6. 7.3.1.6 Undershoot Reduction (USR)
        7. 7.3.1.7 Overshoot Reduction (OSR)
        8. 7.3.1.8 Current Sensing and Current Sharing
        9. 7.3.1.9 Blanking Time (BLANK)
      2. 7.3.2  PWM Signals
      3. 7.3.3  Remote Sensing and Setting VOUT
      4. 7.3.4  Input Voltage (VIN)
      5. 7.3.5  VLDO
      6. 7.3.6  Voltage Reference (VREF)
      7. 7.3.7  Enable (EN)
      8. 7.3.8  Power Good (PG)
      9. 7.3.9  Turn-On Behavior
        1. 7.3.9.1 Soft-Start (SS)
      10. 7.3.10 Current Monitor Output (ISUM)
      11. 7.3.11 Overcurrent Protection
    4. 7.4 Device Functional Modes
    5. 7.5 Programming
      1. 7.5.1 PMBus General Description
      2. 7.5.2 Write Byte
      3. 7.5.3 Read Byte
      4. 7.5.4 Send Byte
      5. 7.5.5 Packet Error Checking (PEC)
      6. 7.5.6 Additional Faults
      7. 7.5.7 PMBus Command Overview
      8. 7.5.8 PMBus Address Selection
  9. 8 Register Map
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Inductor Selection
        2. 9.2.2.2 Current Limit Threshold
        3. 9.2.2.3 Load-Line Setting
        4. 9.2.2.4 Output Capacitor Selection
        5. 9.2.2.5 Loop Compensation
      3. 9.2.3 Application Curve
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Third-Party Products Disclaimer
      2. 10.1.2 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information
    1.     76

1 Features

  • Total ionizing dose (TID) characterized up to 50krad(Si)
  • Single-Event Effects (SEE) characterized
    • Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune up to linear energy transfer (LET) = 43MeV-cm2/mg
    • Single-event functional interrupt (SEFI) and single-event transient (SET) characterized up to LET = 43MeV-cm2/mg
  • D-CAP+ control and droop regulation for optimal load response
  • Single or dual phase operation with single device
  • Support for DrMOS and GaN power stages
  • 0.5V to 2.5V nominal output voltage
  • ±1% reference voltage accuracy
  • Differential remote sensing
  • Configurable switching frequency from 200kHz to 800kHz
  • PMBus® interface at 100kHz to support:
    • ±10% voltage margining
    • On and off command
    • Packet error checking (PEC) for robust SET performance
  • Available in military temperature range (–55°C to 125°C)
  • Package is outgas tested per ASTM E595