SNAS862B April   2025  – October 2025 LMK3H0102-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 I2C Interface Specification
  7. 6 Parameter Measurement Information
    1. 6.1 Output Format Configurations
    2. 6.2 Differential Voltage Measurement Terminology
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Device Block-Level Description
      2. 7.3.2 Device Configuration Control
      3. 7.3.3 OTP Mode
      4. 7.3.4 I2C Mode
    4. 7.4 Device Functional Modes
      1. 7.4.1 Fail-Safe Inputs
      2. 7.4.2 Fractional Output Dividers
        1. 7.4.2.1 FOD Operation
        2. 7.4.2.2 Edge Combiner
        3. 7.4.2.3 Digital State Machine
        4. 7.4.2.4 Spread-Spectrum Clocking
      3. 7.4.3 Output Behavior
        1. 7.4.3.1 Output Format Selection
          1. 7.4.3.1.1 Output Format Types
            1. 7.4.3.1.1.1 LP-HCSL Termination
        2. 7.4.3.2 Output Slew Rate Control
        3. 7.4.3.3 REF_CTRL Operation
      4. 7.4.4 Output Enable
        1. 7.4.4.1 Output Enable Control
        2. 7.4.4.2 Output Enable Polarity
        3. 7.4.4.3 Output Disable Behavior
      5. 7.4.5 Device Default Settings
    5. 7.5 Programming
      1. 7.5.1 I2C Serial Interface
      2. 7.5.2 One-Time Programming Sequence
  9. 8 Device Registers
    1. 8.1 Register Maps
      1. 8.1.1  R0 Register (Address = 0x0) [reset = 0x0861/0x0863]
      2. 8.1.2  R1 Register (Address = 0x1) [reset = 0x5599]
      3. 8.1.3  R2 Register (Address = 0x2) [reset = 0xC28F]
      4. 8.1.4  R3 Register (Address = 0x3) [reset = 0x1801]
      5. 8.1.5  R4 Register (Address = 0x4) [reset = 0x0000]
      6. 8.1.6  R5 Register (Address = 0x5) [reset = 0x0000]
      7. 8.1.7  R6 Register (Address = 0x6) [reset = 0x0AA0]
      8. 8.1.8  R7 Register (Address = 0x7) [reset = 0x6503]
      9. 8.1.9  R8 Register (Address = 0x8) [reset = 0xC28F]
      10. 8.1.10 R9 Register (Address = 0x9) [reset = 0x3066]
      11. 8.1.11 R10 Register (Address = 0xA) [reset = 0x0010]
      12. 8.1.12 R11 Register (Address = 0xB) [reset = 0x4000]
      13. 8.1.13 R12 Register (Address = 0xC) [reset = 0x6800]
      14. 8.1.14 R146 Register (Address = 0x92) [reset = 0x0000]
      15. 8.1.15 R147 Register (Address = 0x93) [reset = 0x0000]
      16. 8.1.16 R148 Register (Address = 0x94) [reset = 0x0000]
      17. 8.1.17 R238 Register (Address = 0xEE) [reset = 0x0000]
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Application Block Diagram Examples
      2. 9.2.2 Design Requirements
      3. 9.2.3 Detailed Design Procedure
        1. 9.2.3.1 Example: Changing Output Frequency
        2. 9.2.3.2 Crosstalk
      4. 9.2.4 Application Curves
    3. 9.3 Power Supply Recommendations
      1. 9.3.1 Power-Up Sequencing
      2. 9.3.2 Decoupling Power Supply Inputs
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

5.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002, HBM ESD Classification Level 2(1) ±2000 V
Charged-device model (CDM), per AEC Q100-011 CDM ESD Classification Level C4A(1) ±750 V
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.