SNVSA85D October   2015  – October 2025 LM27761

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Undervoltage Lockout
      2. 6.3.2 Input Current Limit
      3. 6.3.3 PFM Operation
      4. 6.3.4 Output Discharge
      5. 6.3.5 Thermal Shutdown
    4. 6.4 Device Functional Modes
      1. 6.4.1 Shutdown Mode
      2. 6.4.2 Enable Mode
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application - Regulated Voltage Inverter
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Charge-Pump Voltage Inverter
        2. 7.2.2.2 Negative Low-Dropout Linear Regulator
        3. 7.2.2.3 Power Dissipation
        4. 7.2.2.4 Output Voltage Setting
        5. 7.2.2.5 External Capacitor Selection
          1. 7.2.2.5.1 Charge-Pump Output Capacitor
          2. 7.2.2.5.2 Input Capacitor
          3. 7.2.2.5.3 Flying Capacitor
          4. 7.2.2.5.4 LDO Output Capacitor
      3. 7.2.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Receiving Notification of Documentation Updates
    2. 8.2 Support Resources
    3. 8.3 Trademarks
    4. 8.4 Electrostatic Discharge Caution
    5. 8.5 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

8.4 Electrostatic Discharge Caution

LM27761 This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.