10 Revision
History
Changes from September 9, 2025 to October 22, 2025 (from Revision A (September 2025) to Revision B (October 2025))
-
Features section: Changed ADC speed from 9.4 MSPS to 8.9 MSPS.Go
-
Device Comparison section: Changed ADC speed from 68.75 ns / 9.4 MSPS to
112.36 ns / 8.9 MSPS.Go
-
Device Comparison section: Removed "Internal 3.3-V to 1.2-V Voltage Regulator (VREG)" table row.Go
-
Power and Ground table: Added "Connect this pin to 3.3-V
supply" to Description of VDD3VFL, VDDA, VDDIO, and VDDOSC.Go
-
GPIO and ADC Allocation table: Changed "F2800135V" to "64 VPM."Go
- Changed typical VDDIO operating mode current consumption at 30 degrees from 32mA to 28mAGo
- Changed typical VDDA operating mode current consumption at 30 degrees from 2.5mA to 3.3mAGo
- Changed max VDDA operating mode current consumption at 125 degrees from 6.5mA to 7mAGo
- Changed max VDDIO idle mode current consumption at 125 degrees from 27mA to 29mAGo
- Changed typical VDDA idle mode current consumption at 30 degrees from 0.01mA to 2.5mAGo
- Changed max VDDA standby mode (PLL Enabled) current consumption at 125 degrees from 0.1mA to 4.0mAGo
- Changed typical VDDIO reset mode current consumption at 30 degrees from 8mA to 12.5mAGo
- Changed typical VDDA reset mode current consumption at 30 degrees from 0.01mA to 1mAGo
-
Current Consumption Graphs section: Updated figures. Go
-
Current Consumption Graphs section: Added
section.Go
-
PMM Block Diagram: Updated figure. Go
-
External Supervisor Usage section: Updated section to remove
VDD mentions.Go
-
Internal Power-Up Sequence section: Updated title and section
to remove VDD and VREG mentions.Go
-
Internal Power-Up Sequence Summary table: Updated title to remove VDD mention.Go
-
Recommended Operating Conditions Applicability to the PMM section: Updated section to remove VREG mention.Go
- Changed min supply ramp rate from 20mV/us to 3mV/usGo
- Changed power up time from 350us to 40usGo
- Changed In-rush currrent from 80mA to 45mAGo
- Changed XRSn release delay after supplies are ramped up from 40us to 320usGo
- Changed XRSn release delay after VDDIO BOR event from 40us to 360usGo
- Changed XRSn release delay after VDDIO POR event from 120us to 440usGo
-
Power-on Reset Diagram: Removed VDD from figure.Go
- Changed max PLL Lock time from 15us to 786*tC(OSCLK) usGo
- Changed min INTCLK frequency from 2MHz to 4MHzGo
- Changed max INTCLK frequency from 20MHz to 25MHzGo
- Changed min VCOCLK frequency from 220MHz to 160MHzGo
- Changed max VCOCLK frequency from 600MHz to 400MHzGo
- Changed min PLLRAWCLK frequency from 6MHz to 5MHzGo
- Changed max PLLRAWCLK frequency from 240MHz to 200MHzGo
- Changed nominal PLL Limp frequency formulaGo
- Changed min LSPCLK period from 8.33ns to 6.25nsGo
- Added WROSC frequency table Go
-
RAM Specifications section: Added section.Go
-
ROM Specifications section: Added section.Go
-
Reference Summary Table: Replaced CONFIG8 bitfield name with ANAREFSEL. Go
-
Analog-to-Digital Converter (ADC) section: Updated bulletpoints under "Each ADC has the following features". Go
- Changed ADCCLK conversion cycles from 11 ADCCLKs to 12 ADCCLKsGo
- Changed typical VREFHI input current from 40uA to 200uA for a 2.5V referenceGo
- Changed typical VREFHI input current from 40uA to 130uA for a 1.65V referenceGo
- Changed typical gain error (with external reference) from +/-3 LSB to min of -5 LSBGo
- Changed typical gain error (with external reference) from +/-3 LSB to max of 5 LSBGo
- Changed typical offset error from +/-2 LSB to min of -5 LSBGo
- Changed typical offset error from +/-2 LSB to max of 5 LSBGo
- Changed typical DNL error from -0.999 to 1 LSB to min of >-1 LSBGo
- Changed typical DNL error from -0.999 to 1 LSB to max of 1 LSBGo
- Changed typical INL error to min and maxGo
- Changed typical THD from -80dB to -77dBGo
-
ADC Performance Per Pin section: Added
section.Go
-
Per-Channel Parasitic Capacitance for 48-Pin PT LQFP table: Updated table.Go
-
Per-Channel Parasitic Capacitance for 32-Pin RHB VQFN table: Updated table.Go
-
Per-Channel Parasitic Capacitance for 32-Pin VFC LQFP table: Updated table.Go
- Changed min 1x hysteresis from 2mV to 1mVGo
- Changed min 2x hysteresis from 8mV to 7mVGo
- Changed min 3x hysteresis from 15mV to 14mVGo
- Changed min 4x hysteresis from 20mV to 19mVGo
- Changed min 5x hysteresis from 26mV to 25mVGo
- Changed min 6x hysteresis from 32mV to 31mVGo
- Changed min 7x hysteresis from 38mV to 37mVGo
- Changed min static INL from -5 LSB to -7 LSBGo
- Changed max static INL from 5 LSB to 7 LSBGo
- Changed load regulation from typical +/- 1 mV/V to min -1mV/VGo
- Changed load regulation from typical +/- 1 mV/V to max 1mV/VGo
- Added voltage output slew rate minGo
- Changed voltage output slew rate typical from 2.5V/us to 4.5V/usGo
- Added voltage output slew rate maxGo
- Changed load transient settling time max from 700ns to 750nsGo
- Added min offset errorGo
- Removed typical offset errorGo
- Added max offset errorGo
- Added min DNL Go
- Removed typical DNLGo
- Added max DNL Go
- Added min INL Go
- Removed typical INLGo
- Added max INL Go
- Changed min ADC S+H settling time for all gainsGo
- Changed typical Ria for 2/-1 gain from 14kOhms to 16kOhmsGo
- Changed typical Ria for 4/-3 gain from 7kOhms to 8kOhmsGo
- Changed typical Rib for 2/-1 gain from 14kOhms to 16kOhmsGo
- Changed typical Rib for 4/-3 gain from 21kOhms to 24kOhmsGo
- Changed min and max gain errors for gains 2,-1 to 32,-31 Go
-
eQEP Block Diagram: Updated diagram. Go
-
Flash Memory Map table: Deleted F2800135V from PART NUMBER
column.Go
-
Direct Memory Access (DMA) section: Added note about DMA accessing EALLOW protected peripheral registers.Go
-
Direct Memory Access (DMA): Updated diagram and "DMA features
include" list to add access to PGA and CMPSS peripheral registers. Added
software trigger from C28x as a trigger source in block
diagram.Go
-
Tape and Reel section: Added 32VFC and 48PT parts to Tape and Reel
tables.Go
Changes from July 27, 2025 to September 8, 2025
-
TAPE AND REEL INFORMATION section: Added
XF28E120SBTRHBR.Go