TIDT435 February   2025

 

  1.   1
  2.   Description
  3.   Features
  4.   Applications
  5. 1Test Prerequisites
    1. 1.1 Voltage and Current Requirements
    2. 1.2 Required Equipment
    3. 1.3 Considerations
    4. 1.4 Dimensions
  6. 2Testing and Results
    1. 2.1 Efficiency Graphs
    2. 2.2 Efficiency Data
    3. 2.3 Thermal Images
    4. 2.4 Bode Plots
    5. 2.5 Light Load Efficiency Optimization
    6. 2.6 Midpoint Voltage Balance Control of Input Capacitors
  7. 3Waveforms
    1. 3.1 Switching
    2. 3.2 Output Voltage Ripple
    3. 3.3 Turn ON and OFF
    4. 3.4 Load Transients
  8.   Trademarks

Description

This reference design describes a 3.5kW, 800V to 14V DC-DC converter with 650V Gallium nitride (GaN) high-electron mobility transistors (HEMT). Using stacked half-bridge (SHB) topology makes the converter work at 800V with 650V GaN HEMT. Using LMG3522R030 as primary switches makes the converter work at a high switching frequency. In this design, the converter uses a smaller transformer size. To ease the thermal performance of active clamping metal-oxide semiconductor field effect transistors (MOSFETs), the converter uses two channel active clamping circuits.