Gallium nitride (GaN) is a wide band-gap semiconductor that enables faster switching, higher efficiency, and greater power density than traditional silicon solutions. This allows for smaller, lighter designs with improved thermal performance and lower power loss. TI GaN technology supports a broad range of applications, including consumer electronics, data centers, grid and telecom infrastructure, and automotive power electronics, maintaining high performance and reliability.

 

Why choose our GaN technology?

Faster switching speeds, higher efficiency
Smaller systems, higher power density
Built for reliability
GaN technology at scale

Explore our GaN portfolio

Unlock higher power density and efficiency with GaN

As power demands increase, GaN adoption continues to accelerate in next-generation architectures. Our fully integrated GaN power stages combine GaN HEMTs, drivers, protection, and control into a one-chip solution, designed for applications including data centers, server power, solar inverters, industrial systems, automotive and more.

  • Enable high switching frequency up to 1MHz for smaller magnetics and higher power density.
  • Reduce switching losses to improve efficiency and simplify bias circuitary.
  • Integrate driver and protection to simplify design and reduce loop parasitics.

White paper

Achieving GaN Products With Lifetime Reliability

The white paper demonstrates TI GaN power devices' reliability through comprehensive testing, showing robust performance under hard-switching, dynamic stress, surge events, and real-world power conditions.
Application brief

Application of GaN FET in Humanoid Robots

Learn how to meet challenging size and heat dissipation requirements when integrating GaN FETs into humanoids while still maintaining the smooth operation of this complex system.
Reference design

3.6kW, 54V, single-phase, AC-to-DC rectifier reference design with all GaN switches

This reference design is a digitally controlled 3.6kW, 54V single-phase AC-to-DC rectifier with all GaN switches. This design is a demonstration for modular hardware system common redundant power supply (M-CRPS) with standard form factor. The input stage chooses a single-phase, totem-pole (...)

LMG3670R010PREVIEW

650V 10mΩ STOLT-packaged GaN FET with integrated driver

LMG3650R035ACTIVE

650V 35mΩ TOLL-packaged GaN FET with integrated driver and protection

LMG2100R044ACTIVE

100-V 4.4-mΩ half-bridge GaN FET with integrated driver and protection

Improve performance & simplify power supply design

Our AC/DC products with integrated GaN technology are designed for next-generation applications, including adapters, appliances, server power, and chargers. By integrating high-performance GaN HEMTs like in the UCG28826, these solutions deliver industry-leading power density, high efficiency and low standby power.

  • Simplify design and improve efficiency with self-bias and auxless sensing.
  • Reduce BoM cost by integrating high-voltage startup, X-capacitor discharge, and protection features.
  • Support EMC compliances with quasi-resonant switching, burst mode operation, slew rate control.

Technical article

How an auxless GaN flyback converter can solve AC/DC adapter design challenges (Rev. A)

Explore how the UCG28826 integrated GaN flyback converter from TI can help you overcome AC/DC adapter design challenges.
Video

65W USB-C® charger demonstration with self-biasing GaN flyback

Discover our design for 65W dual USB Type-C® port power delivery charger featuring an integrated GaN converter for enhanced efficiency and compact design.
Reference design

65W dual-port USB Power Delivery charger with self-biasing GaN flyback converter reference design

This reference design is a 65W dual-port USB Power Delivery (PD) charger with self-biasing gallium nitride (GaN) flyback. This design can deliver 65W full rated power across 90VAC to 264VAC and meet efficiency standards and regulations such as DoE Level VI and CoC V5 Tier 2 efficiency standards for (...)


UCG28836ACTIVE

Self-biased high-frequency QR flyback converter with integrated GaN (65W) and low standby power

UCG28824ACTIVE

Self-biased high frequency QR flyback converter with integrated GaN (45W)

UCG28828ACTIVE

High Frequency QR Flyback Converter with integrated GaN power FET for up to 120W output with PFC

Buck and boost converters with integrated GaN FETs

Designed for smaller, lighter and more efficient power systems, these solutions reduce traditional trade-offs between size, efficiency and performance. By leveraging advanced GaN technology, engineers can achieve higher performance than is possible with silicon-based designs.

  • Deliver higher power in smaller solution sizes.
  • Achieve high efficiency for demanding high power applications.
  • Simplify design by integrating GaN FETs, controller, drivers, and bootstrap circuit in one package.

Reference design

48V–12V GaN-enabled 2kW four-phase buck converter, 1/4th brick power module reference design

This reference design is a 2kW, high-density, 48V to 12V closed-loop bus converter based on a four-phase buck for enterprise computing. The design achieves > 98% peak efficiency and 97.5% full load efficiency at 48V VIN. The design uses the LMG3100R017, one of TI's high-performance gallium (...)

Reference design

3V to 42V synchronous GaN boost converter reference design

The reference design is designed for high boost factor and high efficiency. The design operates over a wide input voltage range, starting from 3V using the LMG5126 boost converter with integrated Gallium Nitride (GaN) field-effect transistors (FETs). The reference design includes features such as (...)


LMG708B0PREVIEW

5V to 65V (80V transients), 20A, synchronous buck converter with integrated GaN FETs

LMG5126ACTIVE

42V VIN, 2.5MHz synchronous GaN boost converter with output voltage tracking

Driver higher efficiency, power density & smooth control

Our integrated GaN motor drivers, including the industry leading GaN intelligent power modules (IPMs), deliver >99% inverter efficiency, improve thermal performance and minimize power loss. For applications like home appliances, robotics, e-bikes, drones and power tools, our GaN drivers provide superior harmonic control for quieter operation, smoother performance, and precise motor control. This reduces system costs, energy consumption, and enables compact designs meeting efficiency requirements.

  • Reduce PCB size by over 50% with integrated GaN half-bridge power stages.
  • Reduce power losses by up to 50% at high switching frequencies (100kHz).
  • Minimize dead time (<150ns) and optimize switching to reduce current distortion for better acoustics.

White paper

How Three-Phase Integrated GaN Technology Maximizes Motor-Drive Performance

Read about GaN design considerations, and learn how GaN increases motor efficiency.
Video

Design more efficient, compact motor systems with the DRV7308 GaN IPM

Learn about the DRV7308, a high-efficiency GaN intelligent power module (IPM) to help solve engineering challenges and transform high-voltage motor designs.
Reference design

48v 1kw robot joint motor control with industrial communication reference design

This reference design features TI Sitara™ MCU- AM261x devices handling an industrial Ethernet-connected motor drive. The design uses a 70mm diameter printed circuit board (PCB) to drive a humanoid robot joint (48V, 1kW Eyoubot motor). The design demonstrates a small form factor and simplified (...)


DRV7308ACTIVE

650V, 205mΩ 3-phase integrated GaN intelligent power module (IPM) with protection and current sense

DRV7167PREVIEW

100V 60A half-bridge GaN motor driver power stage

Find resources to get started

Featured applications


TELECOM AND SERVER POWER

Transforming telecom and server power for tomorrow's computing demands

Design telecom and server power systems for storage, cloud and high-performance computing using our GaN devices. These devices help meet demanding efficiency requirements supporting up to 80 PLUS® Titanium standards and enabling power-factor correction (PFC) efficiency above 99%.Enable switching frequencies above 500kHz in isolated DC/DC converters, and reduce magnetics size while minimizing parasitic losses with integrated design 

 


SOLAR AND ENERGY STORAGE

Revolutionize energy storage with unparalleled efficiency and density

Design solar and energy storage systems using GaN devices to achieve smaller, more efficient AC/DC power conversion. GaN enables bidirectional power flow, allowing seamless integration of energy storage into solar inverters and reducing dependence on the grid. These solutions deliver up to 3 times higher power density (>1.2 kW/L) than traditional converters, with 20% better density than SiC FETs through high-frequency GaN switching (140kHz). GaN technology reduces system cost via smaller magnetics and simpler topologies compared to 2-level SiC designs.

 

POWER DELIVERY

Power everyday devices with unmatched performance

Our integrated low-power GaN devices deliver exceptional power density and efficiency benefits to everyday consumer applications including mobile phone and laptop adapters, TV power supply units and USB wall outlets. With system efficiency exceeding 95%, these solutions can reduce consumer AC/DC solution sizes by as much as 50%, while their integrated current sensing capabilities further enhance efficiency and minimize printed circuit board footprint.


OBC AND D/C CONVERTER

Enable high power density in electric vehicles with our GaN technology

The next generation of single-phase AC on-board chargers (OBCs) and high-to-low-voltage DC/DC converters in hybrid-electric (HEV) and electric vehicles (EV) are leveraging GaN power devices to achieve higher switching frequencies and reduce magnetics size, delivering superior power density compared to silicon and SiC-based alternatives. These solutions offerprovide more power than SiC at equivalent volumes, with switching frequencies exceeding 500kHz for CLLLC and 120kHz for PFC, while achieving 96.5% combined system-level efficiency and featuring integrated gate drivers that significantly simplify system-level design.


HVAC AND APPLIANCES

Realize higher power efficiency and a smaller form factor in motor drives for heating, ventilation and air conditioning (HVAC) and appliances with our GaN devices

Design telecom and server power systems for storage, cloud and high-performance computing using our GaN devices. These devices help meet demanding efficiency requirements supporting up to 80 PLUS® Titanium standards and enabling power-factor correction (PFC) efficiency above 99%.Enable switching frequencies above 500kHz in isolated DC/DC converters, and reduce magnetics size while minimizing parasitic losses with integrated design

Success stories

Panasonic Automotive Systems enables the transition to 48V audio systems with TI GaN expertise

"Integrating GaN FETs directly into the buck converter was a game-changer for our 48V audio architecture. TI's solution delivered the switching performance and thermal management we needed in a compact footprint, enabling us to achieve size and reliability targets."
Jim Walter | Panasonic Automotive, Executive Director of Advanced Engineering
Read case study

Delta powers data centers with TI GaN

"The application of GaN converges with Delta (Electronics') core expertise in high-efficiency power electronics to maximize power density, without giving up efficiency performance. At the end of the day, the GaN technology opens the door to a new world of products that have not been possible."
Kai Dong | Delta Electronics, R&D Manager of Custom Design Business Unit
Read case study

Chicony Power and TI join forces to bring GaN technology to next-generation energy-efficient laptop power adapter

"GaN brings revolutionary changes to power supply designs. Its high-frequency switching characteristics and lower conduction impedance are the determining factors for improving the efficiency and reducing the size of power products, leading to significant reduction in energy consumption and materials used in power products and bringing new opportunities for Chicony Power's green design concepts."
Yang Wang | Chicony Power, VP R&D
View news release

TI's GaN technology and real-time MCUs power LITEON Technology's new server power supply design

"In the development of new generation high-end server power supplies, LITEON responded to the challenge with the best R&D team and the most advanced material technologies. LITEON has achieved an advanced lead and met the energy-saving requirements of data centers by utilizing TI’s GaN solutions."
Todd Lee |  LITEON Technology, RD Senior Director, Cloud Infrastructure Platform & Solution
View news release

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