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600V 50mΩ GaN FET with integrated driver, protection and zero-voltage detection
Approx. price (USD) 1ku | 7.94
100-V 4.4-mΩ half-bridge GaN FET with integrated driver and protection
Approx. price (USD) 1ku | 3.75
600V 30mΩ GaN FET with integrated driver, protection and zero-voltage detection
Approx. price (USD) 1ku | 11.844
100V 1.7mΩ GaN FET with integrated driver
Approx. price (USD) 1ku | 4.9
650-V 120-mΩ GaN FET with integrated driver and protection
Approx. price (USD) 1ku | 3.25
650-V 270-mΩ GaN FET with integrated driver and protection
Approx. price (USD) 1ku | 2.2
Our GaN and Si MOSFET power stages increase system efficiency & simplify designs
Built for reliability
Our GaN devices are designed to keep high-voltage systems safe thanks to a proprietary GaN-on-Si process, more than 40 million hours of reliability testing and protection features.
High integration
Integrated MOSFETs, drivers and current sensing provide a complete switching function that eliminates passive components, reducing solution size and simplifying printed circuit board layout.
Smaller magnetics, higher power density
Enabled by faster switching speeds, our GaN devices can help you achieve switching frequencies over 500 kHz, which results in up to 60% smaller magnetics, enhanced performance and lower system cost.