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65A synchronous buck NexFET smart power stage with DualCool package

CSD96497Q5MC

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Product details

Parameters

VDS (V) 25 Power loss (W) 2.8 Ploss current (A) 30 Configuration PowerStage ID, continuous drain current at Ta=25degC (A) 65 Package (mm) SON5x6 DualCool PowerStage Operating temperature range (C) -55 to 150 open-in-new Find other Power stages

Features

  • 65-A continuous operating current capability
  • Over 93.5% system efficiency at 30 A
  • High-frequency operation (up to 1.25 MHz)
  • Diode emulation mode with FCCM
  • Temperature compensated bi-directional current sense
  • Analog temperature output
  • Fault monitoring - OTP, HS OCP, and short circuit protection
  • 3.3-V and 5-V PWM signal compatible
  • Tri-state PWM input
  • Integrated bootstrap switch
  • Optimized dead time for shoot-through protection
  • High-density QFN 5-mm × 6-mm Footprint
  • Ultra-low-inductance package
  • System optimized PCB footprint
  • DualCool™ packaging
  • RoHS compliant, lead-free terminal plating
  • Halogen free

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Description

The CSD96497 NexFET™ power stage is a highly optimized design for use in a high-power, high-density synchronous buck converter. This product integrates the driver IC and power MOSFETs to complete the power stage switching function. This combination produces high-current, high-efficiency, and high-speed switching capability in a small 5-mm × 6-mm outline package. It also integrates accurate current sensing and temperature sensing functionality to simplify system design and improve accuracy. In addition, the PCB footprint has been optimized to help reduce design time and simplify the completion of the overall system design.

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Technical documentation

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Type Title Date
* Datasheet CSD96497Q5MC Synchronous buck NexFET™ smart power stage datasheet (Rev. A) Mar. 14, 2019
Technical articles Understanding the benefits of “lead-free” power MOSFETs Feb. 07, 2019
Technical articles When to use load switches in place of discrete MOSFETs Feb. 03, 2016
Technical articles 48V systems: Driving power MOSFETs efficiently and robustly Oct. 08, 2015

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