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ISO7710-Q1 ACTIVE Automotive, reinforced 1-channel digital isolator Pin-to-pin performance upgrade; 100 Mbps max data rate, reinforced isolation, and 85kV/us CMTI

Product details

Rating Automotive Integrated isolated power No Number of channels 1 Forward/reverse channels 1 forward / 0 reverse Data rate (max) (Mbps) 25 Protocols GPIO, PWM Propagation delay time (typ) (ns) 31 Isolation rating Basic Withstand isolation voltage (VISO) (Vrms) 3000 Surge isolation voltage (VIOSM) (kVPK) 7.8 CMTI (min) (kV/µs) 25 Default output High, Low Creepage (min) (mm) 4 Current consumption per channel (DC) (typ) (mA) 1.4 Current consumption per channel (1 Mbps) (typ) (mA) 1.4 Operating temperature range (°C) -40 to 125 Transient isolation voltage (VIOTM) (VPK) 4242 Clearance (min) (mm) 4
Rating Automotive Integrated isolated power No Number of channels 1 Forward/reverse channels 1 forward / 0 reverse Data rate (max) (Mbps) 25 Protocols GPIO, PWM Propagation delay time (typ) (ns) 31 Isolation rating Basic Withstand isolation voltage (VISO) (Vrms) 3000 Surge isolation voltage (VIOSM) (kVPK) 7.8 CMTI (min) (kV/µs) 25 Default output High, Low Creepage (min) (mm) 4 Current consumption per channel (DC) (typ) (mA) 1.4 Current consumption per channel (1 Mbps) (typ) (mA) 1.4 Operating temperature range (°C) -40 to 125 Transient isolation voltage (VIOTM) (VPK) 4242 Clearance (min) (mm) 4
SOIC (D) 8 29.4 mm² (4.9 mm × 6 mm)
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range
    • Device HBM Classification Level 3A
    • Device CDM Classification Level C6
  • Signaling Rate: 25 Mbps
  • Integrated Noise Filter at the Input
  • Default Output and Options
  • Low Power Consumption: Typical ICC
    • 1.9 mA at 1 Mbps, 3.8 mA at 25 Mbps (5-V Supplies)
    • 1.4 mA at 1 Mbps, 2.6 mA at 25 Mbps (3.3-V Supplies)
  • Low Propagation Delay: 32 ns Typical (5-V Supplies)
  • 65-kV/μs Transient Immunity, Typical (5-V Supplies)
  • Robust Electromagnetic Compatibility (EMC)
    • System-level ESD, EFT, and Surge Immunity
    • Low Emissions
  • Isolation Barrier Life: > 25 Years
  • Operates from 3.3-V and 5-V Supplies
  • 3.3-V and 5-V Level Translation
  • Narrow Body SOIC-8 Package
  • Safety and Regulatory Approvals:
    • 4242-VPK Isolation per DIN V VDE V 0884-10 and DIN EN 61010-1
    • 3000-VRMS Isolation for 1 minute per UL 1577
    • CSA Component Acceptance Notice 5A,
      IEC 60950-1 and IEC 61010-1 End Equipment Standards
    • Planned CQC Certification per GB4943.1-2011

All trademarks are the property of their respective owners.

  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range
    • Device HBM Classification Level 3A
    • Device CDM Classification Level C6
  • Signaling Rate: 25 Mbps
  • Integrated Noise Filter at the Input
  • Default Output and Options
  • Low Power Consumption: Typical ICC
    • 1.9 mA at 1 Mbps, 3.8 mA at 25 Mbps (5-V Supplies)
    • 1.4 mA at 1 Mbps, 2.6 mA at 25 Mbps (3.3-V Supplies)
  • Low Propagation Delay: 32 ns Typical (5-V Supplies)
  • 65-kV/μs Transient Immunity, Typical (5-V Supplies)
  • Robust Electromagnetic Compatibility (EMC)
    • System-level ESD, EFT, and Surge Immunity
    • Low Emissions
  • Isolation Barrier Life: > 25 Years
  • Operates from 3.3-V and 5-V Supplies
  • 3.3-V and 5-V Level Translation
  • Narrow Body SOIC-8 Package
  • Safety and Regulatory Approvals:
    • 4242-VPK Isolation per DIN V VDE V 0884-10 and DIN EN 61010-1
    • 3000-VRMS Isolation for 1 minute per UL 1577
    • CSA Component Acceptance Notice 5A,
      IEC 60950-1 and IEC 61010-1 End Equipment Standards
    • Planned CQC Certification per GB4943.1-2011

All trademarks are the property of their respective owners.

The ISO7310-Q1 device provides galvanic isolation up to 3000 VRMS for 1 minute per UL 1577 and 4242 VPK per VDE V 0884-10. These devices have one isolated channel comprised of a logic input and output buffer separated by a silicon dioxide (SiO2) insulation barrier. Used in conjunction with isolated power supplies, the ISO7310-Q1 device prevents noise currents on a data bus or other circuit from entering the local ground and interfering with or damaging sensitive circuitry. The device has integrated noise filters for harsh industrial environment where short noise pulses may be present at the device input pins.

The ISO7310-Q1 device has TTL input thresholds and operate from 3-V to 5.5-V supply levels. Through innovative chip design and layout techniques, electromagnetic compatibility of the ISO7310-Q1 device has been significantly enhanced to enable system-level ESD, EFT, Surge and Emissions compliance.

For all available packages, see the orderable addendum at the end of the datasheet.

The ISO7310-Q1 device provides galvanic isolation up to 3000 VRMS for 1 minute per UL 1577 and 4242 VPK per VDE V 0884-10. These devices have one isolated channel comprised of a logic input and output buffer separated by a silicon dioxide (SiO2) insulation barrier. Used in conjunction with isolated power supplies, the ISO7310-Q1 device prevents noise currents on a data bus or other circuit from entering the local ground and interfering with or damaging sensitive circuitry. The device has integrated noise filters for harsh industrial environment where short noise pulses may be present at the device input pins.

The ISO7310-Q1 device has TTL input thresholds and operate from 3-V to 5.5-V supply levels. Through innovative chip design and layout techniques, electromagnetic compatibility of the ISO7310-Q1 device has been significantly enhanced to enable system-level ESD, EFT, Surge and Emissions compliance.

For all available packages, see the orderable addendum at the end of the datasheet.

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