TLV316 10-MHz, Low-Noise, RRIO, CMOS Operational Amplifier for Cost-Sensitive Systems | TI.com

TLV316
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10-MHz, Low-Noise, RRIO, CMOS Operational Amplifier for Cost-Sensitive Systems

 

Description

The TLV316 (single), TLV2316 (dual), and TLV4316 (quad) devices comprise a family of general-purpose, low-power operational amplifiers. Features such as rail-to-rail input and output swings, low quiescent current (400 µA/ch typical) combined with a wide bandwidth of 10 MHz, and very-low noise (12 nV/√Hz at 1 kHz) make this family attractive for a variety of applications that require a good balance between cost and performance. The low input bias current supports operational amplifiers that are used in applications with megaohm source impedances.

The robust design of the TLVx316 provides ease-of-use to the circuit designer–a unity-gain stable, integrated RFI/EMI rejection filter, no phase reversal in overdrive condition, and high electrostatic discharge (ESD) protection (4-kV HBM).

These devices are optimized for low-voltage operation as low as 1.8 V (±0.9 V) and up to 5.5 V (±2.75 V). This latest addition of low-voltage CMOS operational amplifiers to the portfolio, in conjunction with the TLVx313 and TLVx314 series, offer a family of bandwidth, noise, and power options to meet the needs of a wide variety of applications.

Features

  • Unity-Gain Bandwidth: 10 MHz
  • Low IQ: 400 µA/ch
    • Excellent Power-to-Bandwidth Ratio
    • Stable IQ Over Temperature and Supply Range
  • Wide Supply Range: 1.8 V to 5.5 V
  • Low Noise: 12 nV/√Hz at 1 kHz
  • Low Input Bias Current: ±10 pA
  • Offset Voltage: ±0.75 mV
  • Unity-Gain Stable
  • Internal RFI/EMI Filter
  • Extended Temperature Range: –40°C to +125°C

Parametrics

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Part number Order Number of channels (#) Total supply voltage (Min) (+5V=5, +/-5V=10) Total supply voltage (Max) (+5V=5, +/-5V=10) GBW (Typ) (MHz) Slew rate (Typ) (V/us) Rail-to-rail Vos (offset voltage @ 25 C) (Max) (mV) Iq per channel (Typ) (mA) Vn at 1 kHz (Typ) (nV/rtHz) Rating Operating temperature range (C) Package Group Package size: mm2:W x L (PKG) Offset drift (Typ) (uV/C) Features CMRR (Typ) (dB) Output current (Typ) (mA) Architecture
TLV316 Order now 1     1.8     5.5     10     6     In
Out    
3     0.4     12     Catalog     -40 to 125     SC70 | 5
SOT-23 | 5    
5SC70: 4 mm2: 2.1 x 2 (SC70 | 5)
5SOT-23: 5 mm2: 1.6 x 2.9 (SOT-23 | 5)    
2     Cost Optimized
EMI Hardened
Small Size    
90     50     CMOS    
LM321LV Order now 1     2.7     5.5     1     1.5     In to V-     3     0.09     40     Catalog     -40 to 125     SC70 | 5
SOT-23 | 5    
5SC70: 4 mm2: 2.1 x 2 (SC70 | 5)
5SOT-23: 5 mm2: 1.6 x 2.9 (SOT-23 | 5)    
4     Cost Optimized
EMI Hardened
Standard Amps    
  40     CMOS    
MCP6291 Order now 1     2.4     5.5     10     6.5     In
Out    
3     0.6     8.7     Catalog     -40 to 125     SC70 | 5
SOT-23 | 5    
5SC70: 4 mm2: 2.1 x 2 (SC70 | 5)
5SOT-23: 5 mm2: 1.6 x 2.9 (SOT-23 | 5)    
1.1     EMI Hardened     103       CMOS    
TLV171 Order now 1     2.7     36     3     1.5     In to V-
Out    
2.7     0.525     16     Catalog     -40 to 125     SOIC | 8
SOT-23 | 5    
8SOIC: 19 mm2: 3.91 x 4.9 (SOIC | 8)
5SOT-23: 5 mm2: 1.6 x 2.9 (SOT-23 | 5)    
1     Cost Optimized
EMI Hardened
High Cload Drive    
105     30     CMOS    
TLV6741 Order now 1     2.25     5.5     10     4.75     Out     1     0.85     5