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Parameters

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Package | Pins | Size

SOIC (D) 8 19 mm² 3.91 x 4.9 open-in-new Find other P-channel MOSFET transistors

Features

  • Low rDS(on) . . . 0.18 at VGS = -10 V
  • 3-V Compatible
  • Requires No External VCC
  • TTL and CMOS Compatible Inputs
  • VGS(th) = -1.5 V Max
  • ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015

LinBICMOS is a trademark of Texas Instruments Incorporated

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Description

The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have been optimized, by means of the Texas Instruments LinBiCMOSTM process, for 3-V or 5-V power distribution in battery-powered systems. With a maximum VGS(th) of -1.5 V and an IDSS of only 0.5 uA, the TPS1120 is the ideal high-side switch for low-voltage portable battery-management systems, where maximizing battery life is a primary concern. Because portable equipment is potentially subject to electrostatic discharge (ESD), the MOSFETs have built-in circuitry for 2-kV ESD protection. End equipment for the TPS1120 includes notebook computers, personal digital assistants (PDAs), cellular telephones, bar-code scanners, and PCMCIA cards. For existing designs, the TPS1120D has a pinout common with other p-channel MOSFETs in small-outline integrated circuit SOIC packages.

The TPS1120 is characterized for an operating junction temperature range, TJ, from -40°C to 150°C.

Caution. This device contains circuits to protect its inputs and outputs against damage due to high static voltages or electrostatic fields. These circuits have been qualified to protect this device against electrostatic discharges (ESD) of up to 2 kV according to MIL-STD-883C, Method 3015; however, it is advised that precautions be taken to avoid application of any voltage higher than maximum-rated voltages to these high-impedance circuits.

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Technical documentation

= Top documentation for this product selected by TI
No results found. Please clear your search and try again. View all 4
Type Title Date
* Datasheet Dual P-Channel Enhancement-Mode MOSFETs datasheet (Rev. A) Aug. 01, 1995
Technical articles Understanding the benefits of “lead-free” power MOSFETs Feb. 07, 2019
Technical articles When to use load switches in place of discrete MOSFETs Feb. 03, 2016
Technical articles 48V systems: Driving power MOSFETs efficiently and robustly Oct. 08, 2015

Design & development

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Design tools & simulation

CALCULATION TOOL Download
Buck Converter NexFET™ Selection Tool
FETPWRCALC — This tool is designed to assist engineers in the selection of Texas Instruments’ discrete power MOSFET and Power Block devices for their synchronous buck design. Users can input the conditions for their power supply and compare various discrete and power block solutions by power loss, relative (...)
Features
  • Vary power supply conditions and observe TI’s most efficient solutions for any set of input parameters
  • Select from a pre-established list of TI controllers or enter your own custom IC
  • Rank solutions by effective power loss and compare by relative 1k price, device package, and total PCB footprint
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CAD/CAE symbols

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SOIC (D) 8 View options

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