Top

Product details

Parameters

DDR memory type DDR, DDR2, DDR3, DDR3L, DDR4 Control mode Current Mode Iout VDDQ (Max) (A) 4 Iout VTT (Max) (A) 1 Iq (Typ) (mA) 0.65 Output VDDQ, VREF, VTT Vin (Min) (V) 2.95 Vin (Max) (V) 6 Features Complete Solution, Power Good, Shutdown Pin for S3 Rating Automotive Operating temperature range (C) -40 to 125 open-in-new Find other DDR memory power ICs

Package | Pins | Size

WQFN (RTW) 24 16 mm² 4 x 4 open-in-new Find other DDR memory power ICs

Features

  • AEC-Q100 Qualified With the Following Results:
    • Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range
    • Device HBM ESD Classification Level 2
    • Device CDM ESD Classification Level C6
  • Single-chip DDR2, DDR3 and DDR3L Memory Power Solution
  • 4-A Synchronous Buck Converter
    • Integrated 33-mΩ High-side and 25-mΩ Low-side MOSFETs
    • Fixed Frequency Current-mode Control
    • Adjustable Frequency from 100 kHz to 2.5 MHz
    • Synchronizable to an External Clock
    • 0.6-V ±1% Voltage Reference Over Temperature
    • Adjustable Cycle-by-Cycle Peak Current Limit
    • Monotonic Start-up Into Pre-biased Outputs
  • 1-A Source/Sink Termination LDO with ±20-mV DC Accuracy
    • Stable with 2 × 10-µF MLCC Capacitor
    • 10-mA Source/Sink Buffered Reference Output Regulated to Within 49% to 51% of VDDQ
  • Independent Enable Pins with Adjustable UVLO and Hysteresis
  • Thermal Shutdown
  • –40°C to 150°C Operating TJ
  • 24-pin, 4-mm × 4-mm WQFN Package
open-in-new Find other DDR memory power ICs

Description

The TPS54116-Q1 device is a full featured 6-V, 4-A, synchronous step down converter with two integrated MOSFETs and 1-A sink/source double data rate (DDR) VTT termination regulator with VTTREF buffered reference output.

The TPS54116-Q1 buck regulator minimizes solution size by integrating the MOSFETs and reducing inductor size with up to 2.5-MHz switching frequency. The switching frequency can be set above the medium wave radio band for noise sensitive applications and is synchronizable to an external clock. Synchronous rectification keeps the frequency fixed across the entire output load range. Efficiency is maximized through integrated 25-mΩ low-side and 33-mΩ high-side MOSFETs. Cycle-by-cycle peak current limit protects the device during an overcurrent condition and is adjustable with a resistor at the ILIM pin to optimize for smaller inductors.

The VTT termination regulator maintains fast transient response with only 2 × 10-µF ceramic output capacitance reducing external component count. The TPS54116-Q1 uses remote sensing of VTT for best regulation.

Using the enable pins to enter a shutdown mode reduces supply current to 1-µA. Under voltage lockout thresholds can be set with a resistor network on either enable pin. The VTT and VTTREF outputs are discharged when disabled with ENLDO.

Full integration minimizes the IC footprint with a small 4 mm × 4 mm thermally enhanced WQFN package.

open-in-new Find other DDR memory power ICs
Download

Technical documentation

= Featured
No results found. Please clear your search and try again. View all 7
Type Title Date
* Data sheet TPS54116-Q1 2.95-V to 6-V Input, 4-A Step-Down Converter and 1-A Source/Sink DDR Termination Regulator datasheet (Rev. B) Oct. 17, 2016
Application notes DDR VTT Power Solutions: A Competitive Analysis Apr. 27, 2018
Technical articles Improving DDR memory performance in automotive applications Jun. 22, 2017
Technical articles Four design tips to obtain 2MHz switching frequency Oct. 03, 2016
User guides TPS54116EVM-830 4-A, 1-A, SWIFT™ Regulator Evaluation Module Aug. 11, 2016
Technical articles Don’t underestimate the power of an LDO Oct. 19, 2013
Technical articles How to optimize your DSP power budget Oct. 03, 2013

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Hardware development

EVALUATION BOARDS Download
document-generic User guide
$49.00
Description
The TPS54116-Q1EVM-830 evaluation module (EVM) facilitates evaluation of the TPS54116-Q1 Automotive DDR Power Solution with 4 A, 2-MHz VDDQ DC/DC Converter and 1 A VTT LDO. The EVM operates from a 2.95 V to 6 V input and delivers a 4 A DDR VDDQ output. The EVM includes an integrated 1 A VTT LDO (...)
Features
  • DDR VDDQ and VTT outputs
  • Included VTT source / sink dynamic load
  • VTTREF output
  • VDDQ up to 4 A
  • VTT output up to ±1 A

Design tools & simulation

SIMULATION MODELS Download
SLVMBR1.ZIP (219 KB) - PSpice Model

Reference designs

REFERENCE DESIGNS Download
Automotive Power Reference Design for Low Power TDA3x Based Systems
TIDA-00530 This solution was designed to make an integrated, size-optimized power design for ADAS applications using the TDA3x SoC off of an automotive battery input.  By targeting only applications with lower processing needs, we’re able to choose devices and components which are smaller, compared (...)
document-generic Schematic document-generic User guide

CAD/CAE symbols

Package Pins Download
WQFN (RTW) 24 View options

Ordering & quality

Support & training

TI E2E™ forums with technical support from TI engineers

Content is provided "as is" by TI and community contributors and does not constitute TI specifications. See terms of use.

If you have questions about quality, packaging or ordering TI products, see TI support. ​​​​​​​​​​​​​​

Videos

Related videos