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Product details

Parameters

DDR memory type LPDDR4, LPDDR4X Iout VDDQ (Max) (A) 8 Iout VTT (Max) (A) 1.5 Output VDDQ, VREF, VTT Vin (Min) (V) 4.5 Vin (Max) (V) 18 Features Complete Solution, Eco Mode, S3/S5 Support Rating Catalog Operating temperature range (C) -40 to 125 open-in-new Find other DDR memory power ICs

Package | Pins | Size

VQFN-HR (RJE) 18 9 mm² 3 x 3 open-in-new Find other DDR memory power ICs

Features

  • Synchronous buck converter (VDD2)
    • Input voltage range: 4.5 V to 18 V
    • Output voltage fixed at 1.1 V
    • D-CAP3™ mode control for fast transient response
    • Continual output current: 8 A
    • Advanced Eco-mode™ pulse skip
    • Integrated 22-mΩ / 8.6-mΩ RDS(on) internal power switch
    • 600-kHz switching frequency
    • Internal soft start: 1.6 ms
    • Cycle-by-cycle overcurrent protection
    • Latched output OV/UV protections
  • Synchronous buck converter (VDD1)
    • Input voltage range: 3 V to 5.5 V
    • Output voltage fixed at 1.8 V
    • D-CAP3™ mode control for fast transient response
    • Continual output current: 1 A
    • Advanced Eco-mode™ pulse skip
    • Integrated 150-mΩ /120-mΩ RDS(on) internal power switch
    • 580-kHz switching frequency
    • Internal soft start: 1 ms
    • Cycle-by-cycle overcurrent protection
    • Latched output OV/UV protections
  • 1.5-A LDO (VDDQ)
    • 1.5-A continual output current
    • Requires only 10 µF of ceramic output capacitor
    • Support high-Z in S3
    • ±30-mV VDDQ output accuracy (DC+AC)
  • Low quiescent current: 150 µA
  • Power good indicator
  • Output discharge function
  • Power up and power down sequencing control
  • Non-latch for OT and UVLO protections
  • 18-pin 3.0-mm × 3.0-mm HotRod™ VQFN package

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Description

The TPS65296 device provides a complete power solution for LPDDR4/LPDDR4X memory system with the lowest total cost and minimum space. It meets the JEDEC standard for LPDDR4/LPDDR4X power-up and power-down sequence requirement. The TPS65296 integrates two synchronous buck converters (VDD1 and VDD2) and a 1.5-A LDO (VDDQ).

The TPS65296 employs D-CAP3™ mode with 600-kHz switching frequency for fast transient, good load/line regulation, and support for ceramic output capacitors without an external compensation circuit.

The TPS65296 provides rich functions as well as good efficiency with internal low Rdson power MOSFETs. It supports flexible power state control, placing VDDQ at high-Z in S3 and discharging VDD1, VDD2, and VDDQ in S4/S5 state. Full protection features include OVP, UVP, OCP, UVLO and thermal shutdown protection. The part is available in a thermally enhanced 18-pin HotRod™ VQFN package and is designed to operate under the –40°C to 125°C junction temperature range.

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Technical documentation

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Type Title Date
* Datasheet TPS65296 Complete LPDDR4X Memory Power Solution datasheet (Rev. A) Oct. 07, 2020
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Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Hardware development

EVALUATION BOARD Download
59
Description
The TPS65295 evaluation module (EMV) is used to evaluate the TPS65295 device. The TPS65295 device provides a complete power solution for DDR4 memory system with the lowest total cost and minimum space. It meets the JEDEC standard for DDR4 power-up and power-down sequence requirement. The (...)
Features
  • Input voltage range: 4.5 V to 18 V
  • Output voltage: 1.2 V VDDQ, 2.5 V VPP, 0.6 V VTT
  • 12-A Integrated 17 mΩ/6 mΩ Rdson FET Converter
  • D-CAP3TM architecture to enable POSCAP and MLCC output capacitor usage
  • Complete DDR4 power solution
  • 3 mm x 3 mm HotRod™ QFN package

Design tools & simulation

SIMULATION MODEL Download
SLUM697.ZIP (471 KB) - TINA-TI Reference Design

CAD/CAE symbols

Package Pins Download
VQFN-HR (RJE) 18 View options

Ordering & quality

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