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TPS7H1210-SEP

ACTIVE

Radiation-tolerant, -3V to -16.5V input, 1A, negative linear regulator

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Data sheet

TPS7H1210-SEP

ACTIVE
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Product details

Rating Space Vin (max) (V) -3 Vin (min) (V) -16.5 Iout (max) (A) 1 Output options Adjustable Output, Negative Output Vout (max) (V) -1.2 Vout (min) (V) -15.5 Noise (µVrms) 13.7 PSRR at 100 KHz (dB) 61 Iq (typ) (mA) 0.21 Features Enable, Soft start Thermal resistance θJA (°C/W) 32.7 Load capacitance (min) (µF) 10 Regulated outputs (#) 1 Accuracy (%) 2 Dropout voltage (Vdo) (typ) (mV) 363 Operating temperature range (°C) -55 to 125 Radiation, SEL (MeV·cm2/mg) 43 Radiation, TID (typ) (krad) 30
Rating Space Vin (max) (V) -3 Vin (min) (V) -16.5 Iout (max) (A) 1 Output options Adjustable Output, Negative Output Vout (max) (V) -1.2 Vout (min) (V) -15.5 Noise (µVrms) 13.7 PSRR at 100 KHz (dB) 61 Iq (typ) (mA) 0.21 Features Enable, Soft start Thermal resistance θJA (°C/W) 32.7 Load capacitance (min) (µF) 10 Regulated outputs (#) 1 Accuracy (%) 2 Dropout voltage (Vdo) (typ) (mV) 363 Operating temperature range (°C) -55 to 125 Radiation, SEL (MeV·cm2/mg) 43 Radiation, TID (typ) (krad) 30
VQFN (RGW) 20 25 mm² (5 mm × 5 mm)
  • Vendor item drawing available, VID V62/21616
  • Total ionizing dose (TID) characterized to 30 krad(Si)
    • TID RLAT (radiation lot acceptance testing) for every wafer lot to 20 krad(Si)
  • Single-event effects (SEE) characterized
    • Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 43 MeV-cm2/mg
    • Single-event functional interrupt (SEFI) and single-event transient (SET) characterized to LET = 43 MeV-cm2/mg
  • Low noise: 13.7-µVRMS typical (10 Hz to 100 kHz)
  • High power-supply rejection ration, PSRR (typical at VIN = –6 V, VOUT = –5 V, IOUT = 1 A):
    • 61 dB at 100 Hz
    • 61 dB at 100 kHz
    • 41 dB at 1 MHz
  • Input voltage range: –3 V to –16.5 V
  • Adjustable output: –1.2 V to –15.5 V
  • Up to 1-A output current
  • Stable with ceramic capacitors ≥ 10 µF
  • Built-in current-limit and thermal shutdown protection
  • Space Enhanced Plastic (SEP)
    • Controlled baseline
    • Gold bondwire
    • NiPdAu lead finish
    • One assembly and test site
    • One fabrication site
    • Military (–55°C to 125°C) temperature range
    • Extended product life cycle
    • Extended product-change notification (PCN)
    • Product traceability
    • Enhanced mold compound for low outgassing
  • Vendor item drawing available, VID V62/21616
  • Total ionizing dose (TID) characterized to 30 krad(Si)
    • TID RLAT (radiation lot acceptance testing) for every wafer lot to 20 krad(Si)
  • Single-event effects (SEE) characterized
    • Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 43 MeV-cm2/mg
    • Single-event functional interrupt (SEFI) and single-event transient (SET) characterized to LET = 43 MeV-cm2/mg
  • Low noise: 13.7-µVRMS typical (10 Hz to 100 kHz)
  • High power-supply rejection ration, PSRR (typical at VIN = –6 V, VOUT = –5 V, IOUT = 1 A):
    • 61 dB at 100 Hz
    • 61 dB at 100 kHz
    • 41 dB at 1 MHz
  • Input voltage range: –3 V to –16.5 V
  • Adjustable output: –1.2 V to –15.5 V
  • Up to 1-A output current
  • Stable with ceramic capacitors ≥ 10 µF
  • Built-in current-limit and thermal shutdown protection
  • Space Enhanced Plastic (SEP)
    • Controlled baseline
    • Gold bondwire
    • NiPdAu lead finish
    • One assembly and test site
    • One fabrication site
    • Military (–55°C to 125°C) temperature range
    • Extended product life cycle
    • Extended product-change notification (PCN)
    • Product traceability
    • Enhanced mold compound for low outgassing

The TPS7H1210-SEP negative voltage linear regulator is a low noise, high PSRR regulator capable of sourcing a maximum load of 1 A.

The regulator include a CMOS logic-level-compatible enable pin (EN) to allow for user-customizable power management schemes. Other features include built-in current limit and thermal shutdown to protect the device and system during fault conditions.

The TPS7H1210-SEP device is designed using bipolar technology primarily for high-accuracy, low-noise applications, where clean voltage rails are critical to maximize system performance. Therefore, it ideal to power op amps, ADCs, DACs, and other high-performance analog circuitry.

Additionally, the TPS7H1210-SEP device is suitable for post DC-DC converter regulation. By filtering the output voltage ripple inherent to DC-DC switching conversion, maximum system performance is ensured in sensitive devices and RF applications.

The TPS7H1210-SEP negative voltage linear regulator is a low noise, high PSRR regulator capable of sourcing a maximum load of 1 A.

The regulator include a CMOS logic-level-compatible enable pin (EN) to allow for user-customizable power management schemes. Other features include built-in current limit and thermal shutdown to protect the device and system during fault conditions.

The TPS7H1210-SEP device is designed using bipolar technology primarily for high-accuracy, low-noise applications, where clean voltage rails are critical to maximize system performance. Therefore, it ideal to power op amps, ADCs, DACs, and other high-performance analog circuitry.

Additionally, the TPS7H1210-SEP device is suitable for post DC-DC converter regulation. By filtering the output voltage ripple inherent to DC-DC switching conversion, maximum system performance is ensured in sensitive devices and RF applications.
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Technical documentation

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Top documentation Type Title Format options Date
* Data sheet TPS7H1210-SEP –16.5-V, 1-A, Negative Linear Regulator in Space Enhanced Plastic datasheet PDF | HTML Nov 23, 2021
* Radiation & reliability report TPS7H1210-SEP Single-Event Effects (SEE) Test Report Dec 13, 2021
* Radiation & reliability report TPS7H1210-SEP Total Ionizing Dose (TID) Nov 24, 2021
* Radiation & reliability report TPS7H1210-SEP Neutron Displacement Damage (NDD) Characterization Nov 24, 2021
* Radiation & reliability report TPS7H1210-SEP Production Flow and Reliability Report PDF | HTML Nov 8, 2021
* VID TPS7H1210-SEP VID V62-21616 Jan 4, 2022
Selection guide TI Space Products (Rev. L) Mar 27, 2026
Technical article How Space Enhanced Products Address Challenges in low Earth orbit Applications (Rev. A) PDF | HTML Dec 18, 2023
White paper Parallel LDO Architecture Design Using Ballast Resistors PDF | HTML Dec 14, 2022
White paper Comprehensive Analysis and Universal Equations for Parallel LDO's Using Ballast PDF | HTML Dec 13, 2022
Application note Reduce the Risk in Low-Earth Orbit Missions with Space Enhanced Plastic Products (Rev. A) PDF | HTML Sep 15, 2022
User guide TPS7H1210EVM User's Guide PDF | HTML Nov 22, 2021
Certificate TPS7H1210EVM EU RoHS Declaration of Conformity (DoC) Oct 4, 2021
E-book Radiation Handbook for Electronics (Rev. A) May 21, 2019

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

TPS7H1210EVM — TPS7H1210-SEP evaluation module for -3-V to -16.5-V input, 1-A, negative linear regulator

The TPS7H1210 evaluation module (EVM) is an engineering demonstration board for evaluating the TPS7H1210-SEP space-enhanced, low-dropout (LDO), negative-voltage linear regulator.

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Simulation model

TPS7H1210-SEP PSpice Transient Model

SBVM985.ZIP (23 KB) - PSpice model
Supported products & hardware
Reference design

TIDA-010274 — Space-grade discrete RF sampling transceiver reference design

This reference design incorporates a 10 GSPS dual digital-to-analog converter and a 5 GSPS dual analog-to-digital converter with active baluns on the RF interface supporting up through X-band. The design also incorporates a space-grade clocking daughter card and a space-grade power solution (...)

Supported products & hardware
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VQFN (RGW) 20 Ultra Librarian
TI's Standard Terms and Conditions for Evaluation Items apply.

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