Gehäuseinformationen
| Gehäuse | Pins SOIC (DW) | 16 |
| Betriebstemperaturbereich (°C) -40 to 125 |
| Gehäusemenge | Träger 2.000 | LARGE T&R |
Merkmale von INA217
- Low Noise: 1.3 nV/√Hz at 1 kHz
- Low THD+N: 0.004% at 1 kHz, G = 100
- Wide Bandwidth: 800 kHz at G = 100
- Wide Supply Range: ±4.5 V to ±18 V
- High CMR: > 100 dB
- Gain Set With External Resistor
- DIP-8 and SOL-16 Widebody Packages
Beschreibung von INA217
The INA217 device is a low-noise, low-distortion, monolithic instrumentation amplifier. Current-feedback circuitry allows the INA217 device to achieve wide bandwidth and excellent dynamic response over a wide range of gain. The INA217 device is ideal for low-level audio signals such as balanced low-impedance microphones. Many industrial, instrumentation, and medical applications also benefit from its low noise and wide bandwidth.
Unique distortion cancellation circuitry reduces distortion to extremely low levels, even in high gain. The INA217 device provides near-theoretical noise performance for 200-Ω source impedance. The INA217 device features differential input, low noise, and low distortion that provides superior performance in professional microphone amplifier applications.
The INA217device features wide supply voltage, excellent output voltage swing, and high output current drive, making it an optimal candidate for use in high-level audio stages.
The INA217 device is available in the same DIP-8 and SOL-16 wide body packages and pinouts as the SSM2017. For a smaller package, see the INA163 device in SO-14 narrow. The INA217 device is specified over the temperature range of –40°C to 85°C.