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LF256

AKTIV

Einfach-Operationsverstärker, 40 V, 5 MHz, mit FET-Eingang

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Datenblatt

LF256

AKTIV
Datenblatt Jetzt bestellen

Produktdetails

Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 44 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 10 Rail-to-rail No GBW (typ) (MHz) 5 Slew rate (typ) (V/µs) 12 Vos (offset voltage at 25°C) (max) (mV) 5 Iq per channel (typ) (mA) 5 Vn at 1 kHz (typ) (nV√Hz) 12 Rating Military Operating temperature range (°C) -25 to 85 Offset drift (typ) (µV/°C) 5 Input bias current (max) (pA) 100 CMRR (typ) (dB) 100 Iout (typ) (A) 0.025 Architecture FET Input common mode headroom (to negative supply) (typ) (V) 3 Input common mode headroom (to positive supply) (typ) (V) 0.1 Output swing headroom (to negative supply) (typ) (V) 2 Output swing headroom (to positive supply) (typ) (V) -2
Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 44 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 10 Rail-to-rail No GBW (typ) (MHz) 5 Slew rate (typ) (V/µs) 12 Vos (offset voltage at 25°C) (max) (mV) 5 Iq per channel (typ) (mA) 5 Vn at 1 kHz (typ) (nV√Hz) 12 Rating Military Operating temperature range (°C) -25 to 85 Offset drift (typ) (µV/°C) 5 Input bias current (max) (pA) 100 CMRR (typ) (dB) 100 Iout (typ) (A) 0.025 Architecture FET Input common mode headroom (to negative supply) (typ) (V) 3 Input common mode headroom (to positive supply) (typ) (V) 0.1 Output swing headroom (to negative supply) (typ) (V) 2 Output swing headroom (to positive supply) (typ) (V) -2
TO-CAN (LMC) 8 80.2816 mm² (8.96 mm × 8.96 mm)
  • Advantages
    • Replace Expensive Hybrid and Module FET
      Op Amps
    • Rugged JFETs Allow Blow-Out Free Handling
      Compared With MOSFET Input Devices
    • Excellent for Low Noise Applications Using
      Either High or Low Source Impedance–Very
      Low 1/f Corner
    • Offset Adjust Does Not Degrade Drift or
      Common-Mode Rejection as in Most
      Monolithic Amplifiers
    • New Output Stage Allows Use of Large
      Capacitive Loads (5,000 pF) Without Stability
      Problems
    • Internal Compensation and Large Differential
      Input Voltage Capability
  • Common Features
    • Low Input Bias Current: 30 pA
    • Low Input Offset Current: 3 pA
    • High Input Impedance: 1012 Ω
    • Low Input Noise Current: 0.01 pA/√Hz
    • High Common-Mode Rejection Ratio: 100 dB
    • Large DC Voltage Gain: 106 dB
  • Uncommon Features
    • Extremely Fast Settling Time to 0.01%:
      • 4 µs for the LFx55 devices
      • 1.5 µs for the LFx56
      • 1.5 µs for the LFx57 (AV = 5)
    • Fast Slew Rate:
      • 5 V/µs for the LFx55
      • 12 V/µs for the LFx56
      • 50 V/µs for the LFx57 (AV = 5)
    • Wide Gain Bandwidth:
      • 2.5 MHz for the LFx55 devices
      • 5 MHz for the LFx56
      • 20 MHz for the LFx57 (AV = 5)
    • Low Input Noise Voltage:
      • 20 nV/√Hz for the LFx55
      • 12 nV/√Hz for the LFx56
      • 12 nV/√Hz for the LFx57 (AV = 5)
  • Advantages
    • Replace Expensive Hybrid and Module FET
      Op Amps
    • Rugged JFETs Allow Blow-Out Free Handling
      Compared With MOSFET Input Devices
    • Excellent for Low Noise Applications Using
      Either High or Low Source Impedance–Very
      Low 1/f Corner
    • Offset Adjust Does Not Degrade Drift or
      Common-Mode Rejection as in Most
      Monolithic Amplifiers
    • New Output Stage Allows Use of Large
      Capacitive Loads (5,000 pF) Without Stability
      Problems
    • Internal Compensation and Large Differential
      Input Voltage Capability
  • Common Features
    • Low Input Bias Current: 30 pA
    • Low Input Offset Current: 3 pA
    • High Input Impedance: 1012 Ω
    • Low Input Noise Current: 0.01 pA/√Hz
    • High Common-Mode Rejection Ratio: 100 dB
    • Large DC Voltage Gain: 106 dB
  • Uncommon Features
    • Extremely Fast Settling Time to 0.01%:
      • 4 µs for the LFx55 devices
      • 1.5 µs for the LFx56
      • 1.5 µs for the LFx57 (AV = 5)
    • Fast Slew Rate:
      • 5 V/µs for the LFx55
      • 12 V/µs for the LFx56
      • 50 V/µs for the LFx57 (AV = 5)
    • Wide Gain Bandwidth:
      • 2.5 MHz for the LFx55 devices
      • 5 MHz for the LFx56
      • 20 MHz for the LFx57 (AV = 5)
    • Low Input Noise Voltage:
      • 20 nV/√Hz for the LFx55
      • 12 nV/√Hz for the LFx56
      • 12 nV/√Hz for the LFx57 (AV = 5)

The LFx5x devices are the first monolithic JFET input operational amplifiers to incorporate well-matched, high-voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust, which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.

The LFx5x devices are the first monolithic JFET input operational amplifiers to incorporate well-matched, high-voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust, which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.
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Top-Dokumentation Typ Titel Format-Optionen Neueste englische Version herunterladen Datum
* Datenblatt LFx5x JFET Input Operational Amplifiers datasheet (Rev. D) PDF | HTML 30.11.2015
E-book The Signal e-book: A compendium of blog posts on op amp design topics PDF | HTML 28.03.2017

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