Gehäuseinformationen
| Gehäuse | Pins SOT-23 (DBV) | 5 |
| Betriebstemperaturbereich (°C) -40 to 120 |
| Gehäusemenge | Träger 3.000 | LARGE T&R |
Merkmale von OPA202
- Precision super-beta performance:
- Low offset voltage: 200 µV (maximum)
- Ultra-low drift: 1 µV/°C (maximum)
- Excellent
efficiency:
- Quiescent current: 580 µA (typical)
- Gain-bandwidth product: 1 MHz
- Low input voltage noise: 9 nV/√Hz
- Ease of use,
design simplicity:
- Heavy capacitive load drive: 5-µs settling time with 25 nF
- Ultra-high input impedance: 3000 GΩ and
0.5 pF - EMI hardened, thermal, and short-circuit protection
- Stable
Performance:
- High CMRR and AOL: 126 dB (minimum)
- High PSRR: 126 dB (minimum)
- Low bias current: 2 nA (maximum)
- Low 0.1-Hz to 10-Hz noise: 0.2 µVPP
- Wide supply voltage: ±2.25 V to ±18 V
- Replaces OP-07 and OP-27
Beschreibung von OPA202
The OPA202, OPA2202, and OPA4202 (OPAx202) are a family of devices built on TI’s industry-leading precision super-beta, complementary, bipolar semiconductor process. This process offers ultra-low flicker noise, low offset voltage, low offset voltage temperature drift, and excellent linearity with common-mode and power-supply variation. These devices offer an exceptional combination of dc precision, heavy capacitive load drive, and protection against external EMI, thermal, and short-circuit events.
The supply current is 580 µA at ±18 V. The OPAx202 do not exhibit phase inversion, and the series is stable with high capacitive loads. The OPAx202 are fully specified with a temperature range from –40°C to +105°C.