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UCC21530

AKTIV

Isolierter Zweikanal-Gate-Treiber, 5,7 kVrms, 4 A/6 A mit EN & DT-Pins im DWK-Gehäuse für IGB

Eine neuere Version dieses Produkts ist verfügbar

Gleiche Funktionalität, gleiche Pinbelegung wie verglichener Baustein
NEU UCC21551 AKTIV 4A/6A 5kVRMS zweikanaliger isolierter Gate-Treiber mit EN- und DT-Pins für IGBT und SiC Tighter VCCI range supporting digital controller thresholds. New DT equation. Increased CMTI and wider operating temperature range.

Produktdetails

Number of channels 2 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 2121 Transient isolation voltage (VIOTM) (VPK) 8000 Power switch IGBT, MOSFET, SiCFET Peak output current (A) 6 Features Enable, Programmable dead time Output VCC/VDD (max) (V) 25 Output VCC/VDD (min) (V) 14.7 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 18 Propagation delay time (µs) 0.019 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 125 Rating Catalog Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 6 Fall time (ns) 7 Undervoltage lockout (typ) (V) 12
Number of channels 2 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 2121 Transient isolation voltage (VIOTM) (VPK) 8000 Power switch IGBT, MOSFET, SiCFET Peak output current (A) 6 Features Enable, Programmable dead time Output VCC/VDD (max) (V) 25 Output VCC/VDD (min) (V) 14.7 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 18 Propagation delay time (µs) 0.019 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 125 Rating Catalog Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 6 Fall time (ns) 7 Undervoltage lockout (typ) (V) 12
SOIC (DWK) 14 106.09 mm² 10.3 x 10.3
  • Universal: dual low-side, dual high-side or half-bridge driver
  • Wide body SOIC-14 (DWK) package
  • 3.3-mm spacing between driver channels
  • Switching parameters:
    • 19-ns typical propagation delay
    • 10-ns minimum pulse width
    • 5-ns maximum delay matching
    • 6-ns maximum pulse-width distortion
  • Common-mode transient immunity (CMTI) greater than 100-V/ns
  • Isolation barrier life >40 years
  • 4-A peak source, 6-A peak sink output
  • TTL and CMOS compatible inputs
  • 3-V to 18-V input VCCI range
  • Up to 25-V VDD output drive supply
  • Programmable overlap and dead time
  • Rejects input pulses and noise transients shorter than 5 ns
  • Operating temperature range –40 to +125°C
  • Safety-related certifications:
    • 8000-VPK isolation per DIN V VDE V 0884-11 :2017-01
    • 5.7-kVRMS isolation for 1 minute per UL 1577
    • CSA certification per IEC 60950-1, IEC 62368-1, IEC 61010-1 and IEC 60601-1 end equipment standards
    • CQC certification per GB4943.1-2011
  • Universal: dual low-side, dual high-side or half-bridge driver
  • Wide body SOIC-14 (DWK) package
  • 3.3-mm spacing between driver channels
  • Switching parameters:
    • 19-ns typical propagation delay
    • 10-ns minimum pulse width
    • 5-ns maximum delay matching
    • 6-ns maximum pulse-width distortion
  • Common-mode transient immunity (CMTI) greater than 100-V/ns
  • Isolation barrier life >40 years
  • 4-A peak source, 6-A peak sink output
  • TTL and CMOS compatible inputs
  • 3-V to 18-V input VCCI range
  • Up to 25-V VDD output drive supply
  • Programmable overlap and dead time
  • Rejects input pulses and noise transients shorter than 5 ns
  • Operating temperature range –40 to +125°C
  • Safety-related certifications:
    • 8000-VPK isolation per DIN V VDE V 0884-11 :2017-01
    • 5.7-kVRMS isolation for 1 minute per UL 1577
    • CSA certification per IEC 60950-1, IEC 62368-1, IEC 61010-1 and IEC 60601-1 end equipment standards
    • CQC certification per GB4943.1-2011

The UCC21530 is an isolated dual-channel gate driver with 4-A source and 6-A sink peak current. It is designed to drive IGBTs, Si MOSFETs, and SiC MOSFETs up to 5-MHz with best-in-class propagation delay and pulse-width distortion.

The input side is isolated from the two output drivers by a 5.7-kVRMS reinforced isolation barrier, with a minimum of 100-V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1850 V.

This device can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver with programmable dead time (DT). The EN pin pulled low shuts down both outputs simultaneously and allows for normal operation when left open or pulled high. As a fail-safe measure, primary-side logic failures force both outputs low.

The device accepts VDD supply voltages up to 25 V. A wide input VCCI range from 3 V to 18 V makes the driver suitable for interfacing with both analog and digital controllers. All the supply voltage pins have under voltage lock-out (UVLO) protection.

The UCC21530 is an isolated dual-channel gate driver with 4-A source and 6-A sink peak current. It is designed to drive IGBTs, Si MOSFETs, and SiC MOSFETs up to 5-MHz with best-in-class propagation delay and pulse-width distortion.

The input side is isolated from the two output drivers by a 5.7-kVRMS reinforced isolation barrier, with a minimum of 100-V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1850 V.

This device can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver with programmable dead time (DT). The EN pin pulled low shuts down both outputs simultaneously and allows for normal operation when left open or pulled high. As a fail-safe measure, primary-side logic failures force both outputs low.

The device accepts VDD supply voltages up to 25 V. A wide input VCCI range from 3 V to 18 V makes the driver suitable for interfacing with both analog and digital controllers. All the supply voltage pins have under voltage lock-out (UVLO) protection.

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Technische Dokumentation

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Alle anzeigen 9
Typ Titel Datum
* Data sheet UCC21530 4-A, 6-A, 5.7-kVRMS Isolated Dual-Channel Gate Driver with 3.3-mm Channel-to-Channel Spacing datasheet (Rev. C) PDF | HTML 09 Nov 2021
Certificate VDE Certificate for Reinforced Isolation for DIN EN IEC 60747-17 (Rev. S) 29 Feb 2024
Application note Impact of Narrow Pulse Widths in Gate Driver Circuits (Rev. A) PDF | HTML 25 Jan 2024
Certificate UCC215xx CQC Certificate of Product Certification 17 Aug 2023
Certificate UL Certification E181974 Vol 4. Sec 7 (Rev. C) 02 Dez 2022
Application brief The Use and Benefits of Ferrite Beads in Gate Drive Circuits PDF | HTML 16 Dez 2021
EVM User's guide Using the UCC21520EVM-286, UCC21521CEVM-286, and UCC21530EVM286 User's Guide (Rev. C) PDF | HTML 21 Okt 2021
Certificate CSA Product Certificate (Rev. A) 15 Aug 2019
Technical article Designing highly efficient, powerful and fast EV charging stations PDF | HTML 06 Aug 2019

Design und Entwicklung

Weitere Bedingungen oder erforderliche Ressourcen enthält gegebenenfalls die Detailseite, die Sie durch Klicken auf einen der unten stehenden Titel erreichen.

Evaluierungsplatine

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UCC21530EVM-286 is designed for evaluating UCC21530DWK, which is an isolated dual-channel gate driver with 4-A source and 6-A sink peak current, 12V UVLO, Enable (Active High) Function and 3.3 mm creepage between channels . This EVM could be served as a reference design for driving IGBTS and SiC (...)
Benutzerhandbuch: PDF | HTML
Simulationsmodell

UCC21530 PSpice Transient Model

SLUM655.ZIP (23 KB) - PSpice Model
Simulationstool

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Design guide: PDF
Schaltplan: PDF
Referenzdesigns

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This reference design provides a three-phase inverter rated up to 10 kW designed using the reinforced isolated gate driver UCC21530, reinforced isolated amplifiers AMC1301 and AMC1311 and MCU TMS320F28027. Lower system cost is achieved by using the AMC1301 to measure motor current interfaced with (...)
Design guide: PDF
Schaltplan: PDF
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SOIC (DWK) 14 Optionen anzeigen

Bestellen & Qualität

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