Startseite Energiemanagement Gate-Treiber Halbbrückentreiber

UCC27284-Q1

AKTIV

Automotive 120V 3A half-bridge gate driver with 5V UVLO and enable options

Eine neuere Version dieses Produkts ist verfügbar

Selbe Funktionalität wie der verglichene Baustein bei gleicher Anschlussbelegung
UCC27212A-Q1 AKTIV 4-A-, 120-V-Halbbrücken-Gate-Treiber mit 5-V-UVLO, für Fahrzeuganwendungen Similar half-bridge driver with higher drive current and similar electrical characteristics

Produktdetails

Bootstrap supply voltage (max) (V) 120 Power switch MOSFET Input supply voltage (min) (V) 5.5 Input supply voltage (max) (V) 16 Peak output current (A) 3 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 5 Rating Automotive Propagation delay time (µs) 0.016 Rise time (ns) 12 Fall time (ns) 10 Iq (mA) 0.002, 2000 Input threshold TTL Channel input logic TTL Switch node voltage (V) -14 Features Enable, Integrated bootstrap diode, Negative Voltage Handling on Input TI functional safety category Functional Safety-Capable Driver configuration Dual inputs
Bootstrap supply voltage (max) (V) 120 Power switch MOSFET Input supply voltage (min) (V) 5.5 Input supply voltage (max) (V) 16 Peak output current (A) 3 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 5 Rating Automotive Propagation delay time (µs) 0.016 Rise time (ns) 12 Fall time (ns) 10 Iq (mA) 0.002, 2000 Input threshold TTL Channel input logic TTL Switch node voltage (V) -14 Features Enable, Integrated bootstrap diode, Negative Voltage Handling on Input TI functional safety category Functional Safety-Capable Driver configuration Dual inputs
SOIC (D) 8 29.4 mm² 4.9 x 6
  • AEC-Q100 qualified with following results
    • Temperature grade 1 (Tj = –40°C to 150°C)
    • Device HBM ESD classification level 1B
    • Device CDM ESD classification level C3
  • Drives two N-channel MOSFETs in high-side low-side configuration
  • 5-V typical undervoltage lockout
  • 16-ns typical propagation delay
  • 12-ns rise, 10-ns fall time with 1.8-nF load
  • 1-ns typical delay matching
  • 5-V negative voltage handling on inputs
  • 14-V negative voltage handling on HS
  • ±3-A peak output current
  • Absolute maximum boot voltage 120 V
  • Integrated bootstrap diode
  • AEC-Q100 qualified with following results
    • Temperature grade 1 (Tj = –40°C to 150°C)
    • Device HBM ESD classification level 1B
    • Device CDM ESD classification level C3
  • Drives two N-channel MOSFETs in high-side low-side configuration
  • 5-V typical undervoltage lockout
  • 16-ns typical propagation delay
  • 12-ns rise, 10-ns fall time with 1.8-nF load
  • 1-ns typical delay matching
  • 5-V negative voltage handling on inputs
  • 14-V negative voltage handling on HS
  • ±3-A peak output current
  • Absolute maximum boot voltage 120 V
  • Integrated bootstrap diode

The UCC27284 -Q1 is a robust N-channel MOSFET driver with a maximum switch node (HS) voltage rating of 100 V. It allows for two N-channel MOSFETs to be controlled in half-bridge or synchronous buck configuration-based topologies. Its 3-A peak source and sink current along with low pull-up and pull-down resistance allows the UCC27284 -Q1 to drive large power MOSFETs with minimum switching losses during the transition of the MOSFET Miller plateau. Since the inputs are independent of the supply voltage, UCC27284 -Q1 can be used in conjunction with both analog and digital controllers. Two inputs, and therefore outputs, can be overlapped, if needed, in applications such as secondary side full-bridge synchronous rectification.

The input pins as well as the HS pin are able to tolerate significant negative voltage, which improves system robustness. 5-V UVLO allows systems to operate at lower bias voltages, which is necessary in many high frequency applications and improves system efficiency in certain operating modes. Small propagation delay and delay matching specifications minimize the dead-time requirement which further improves efficiency.

Undervoltage lockout (UVLO) is provided for both the high-side and low-side driver stages forcing the outputs low if the VDD voltage is below the specified threshold. An integrated bootstrap diode eliminates the need for an external discrete diode in many applications, which saves board space and reduces system cost. UCC27284-Q1 is offered in SOIC package for harsh system environments.

The UCC27284 -Q1 is a robust N-channel MOSFET driver with a maximum switch node (HS) voltage rating of 100 V. It allows for two N-channel MOSFETs to be controlled in half-bridge or synchronous buck configuration-based topologies. Its 3-A peak source and sink current along with low pull-up and pull-down resistance allows the UCC27284 -Q1 to drive large power MOSFETs with minimum switching losses during the transition of the MOSFET Miller plateau. Since the inputs are independent of the supply voltage, UCC27284 -Q1 can be used in conjunction with both analog and digital controllers. Two inputs, and therefore outputs, can be overlapped, if needed, in applications such as secondary side full-bridge synchronous rectification.

The input pins as well as the HS pin are able to tolerate significant negative voltage, which improves system robustness. 5-V UVLO allows systems to operate at lower bias voltages, which is necessary in many high frequency applications and improves system efficiency in certain operating modes. Small propagation delay and delay matching specifications minimize the dead-time requirement which further improves efficiency.

Undervoltage lockout (UVLO) is provided for both the high-side and low-side driver stages forcing the outputs low if the VDD voltage is below the specified threshold. An integrated bootstrap diode eliminates the need for an external discrete diode in many applications, which saves board space and reduces system cost. UCC27284-Q1 is offered in SOIC package for harsh system environments.

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Technische Dokumentation

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Typ Titel Datum
* Data sheet UCC27284-Q1Automotive 3-A 120-V Half-Bridge Driver with Negative Voltage Handling and Low Switching Losses datasheet (Rev. B) PDF | HTML 27 Mai 2022
Application note Mapping Application Requirements with the 120V Halfbridge Gate Driver PDF | HTML 04 Apr 2025
Application note Using Half-Bridge Gate Driver to Achieve 100% Duty Cycle for High Side FET PDF | HTML 25 Mär 2024
Application note Challenges and Solutions for Half-Bridge Gate Drivers in Bidirectional DC-DC Converters PDF | HTML 24 Jan 2024
Application note Bootstrap Circuitry Selection for Half Bridge Configurations (Rev. A) PDF | HTML 08 Sep 2023
Functional safety information UCC27282-Q1 Functional Safety, FIT Rate, Failure Mode Distribution and Pin FMA (Rev. B) PDF | HTML 14 Nov 2022
Application note Comparative Analysis of Two Different Methods for Gate-Drive Current Boosting (Rev. A) PDF | HTML 17 Feb 2022
Application note Voltage Fed Full Bridge DC-DC & DC-AC Converter High-Freq Inverter Using C2000 (Rev. D) 07 Apr 2021
Application note Understanding and comparing peak current capability of gate drivers PDF | HTML 30 Mär 2021
More literature Troubleshooting gate drive circuits in automotive and industrial applications 23 Mär 2021
Application note Implementing High-Side Switches Using Half-Bridge Gate Drivers for 48-V Battery. 12 Mai 2020
Application brief External Gate Resistor Selection Guide (Rev. A) 28 Feb 2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 28 Feb 2020
Application brief Small Price Competitive 100-V Driver for 48-V BLDC Motor Drives 22 Okt 2019
Application note Maximizing DC/DC converter designs with UCC27282 18 Jan 2019
Application note UCC27282 Improving motor drive system robustness 11 Jan 2019
Application note PFC Design Choice for On Board Charger Designs 24 Mai 2018
Application brief Reducing Switching Losses in On-Board Chargers for Electric Vehicles 27 Mär 2018

Design und Entwicklung

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