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UCC27311A-Q1

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Halbbrückentreiber für 120 V, 4,5 A, mit 8 V UVLO und Aktivierungsoptionen für die Automobilindustri

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UCC27311A-Q1

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Produktdetails

Bootstrap supply voltage (max) (V) 120 Power switch MOSFET Input supply voltage (min) (V) 8 Input supply voltage (max) (V) 17 Peak output current (A) 4.5 Operating temperature range (°C) -40 to 150 Undervoltage lockout (typ) (V) 8 Rating Automotive Propagation delay time (µs) 0.02 Rise time (ns) 7.2 Fall time (ns) 5.5 Iq (mA) 0.001 Input threshold TTL Channel input logic TTL Switch node voltage (V) -20 Features Enable, Integrated bootstrap diode, Negative Voltage Handling on Input TI functional safety category Functional Safety-Capable Driver configuration Dual, Noninverting, TTL compatible
Bootstrap supply voltage (max) (V) 120 Power switch MOSFET Input supply voltage (min) (V) 8 Input supply voltage (max) (V) 17 Peak output current (A) 4.5 Operating temperature range (°C) -40 to 150 Undervoltage lockout (typ) (V) 8 Rating Automotive Propagation delay time (µs) 0.02 Rise time (ns) 7.2 Fall time (ns) 5.5 Iq (mA) 0.001 Input threshold TTL Channel input logic TTL Switch node voltage (V) -20 Features Enable, Integrated bootstrap diode, Negative Voltage Handling on Input TI functional safety category Functional Safety-Capable Driver configuration Dual, Noninverting, TTL compatible
VSON (DRC) 10 9 mm² (3 mm × 3 mm)
  • Drives two N-channel MOSFETs in half-bridge configuration
  • AEC-Q100 qualified for automotive applications:
    • Device temperature grade 1
  • –40°C to +150°C junction temperature range
  • 120V abs max voltage on HB pin
  • 3.7A sink, 4.5A source output currents
  • 8V to 17V VDD operating range (20V abs max) with UVLO
  • –(28–VDD)V abs max negative transient tolerance on HS pin (<100ns pulse)
  • –10V to +20V abs max input pins tolerance, independent of supply voltage range (TTL compatible)
  • Switching parameters:
    • 20ns typical propagation delay times
    • 7.2ns rise and 5.5ns fall time with 1000pF load
    • 4ns typical delay matching
  • Integrated bootstrap diode
  • Enable/disable functionality with low current consumption (3µA typical) when disabled
  • Functional Safety-Capable
  • Drives two N-channel MOSFETs in half-bridge configuration
  • AEC-Q100 qualified for automotive applications:
    • Device temperature grade 1
  • –40°C to +150°C junction temperature range
  • 120V abs max voltage on HB pin
  • 3.7A sink, 4.5A source output currents
  • 8V to 17V VDD operating range (20V abs max) with UVLO
  • –(28–VDD)V abs max negative transient tolerance on HS pin (<100ns pulse)
  • –10V to +20V abs max input pins tolerance, independent of supply voltage range (TTL compatible)
  • Switching parameters:
    • 20ns typical propagation delay times
    • 7.2ns rise and 5.5ns fall time with 1000pF load
    • 4ns typical delay matching
  • Integrated bootstrap diode
  • Enable/disable functionality with low current consumption (3µA typical) when disabled
  • Functional Safety-Capable

The UCC27311A-Q1 is a robust gate driver designed to drive two N-channel MOSFETs in a half-bridge or synchronous buck configuration with an absolute maximum bootstrap voltage of 120V. Its 3.7A peak source and 4.5A peak sink current capability allows the UCC27311A-Q1 to drive large power MOSFETs with minimized switching losses during the transition through the Miller Plateau. The switching node (HS pin) can handle negative transient voltage, which allows the high-side channel to be protected from inherent negative voltages caused by parasitic inductance and stray capacitance.

The inputs are independent of supply voltage and are able to withstand -10V and +20V absolute maximum ratings. The low-side and high-side gate drivers are matched to 4ns between the turn on and turn off of each other and are controlled throught the LI and HI input pins respectively. An on-chip 120V rated bootstrap diode eliminates the need to add discrete bootstrap diodes. Undervoltage lockout (UVLO) is provided for both the high-side and the low-side drivers which provides symmetric turn on and turn off behavior and forces the outputs low if the drive voltage is below the specified threshold.

The UCC27311A-Q1 is a robust gate driver designed to drive two N-channel MOSFETs in a half-bridge or synchronous buck configuration with an absolute maximum bootstrap voltage of 120V. Its 3.7A peak source and 4.5A peak sink current capability allows the UCC27311A-Q1 to drive large power MOSFETs with minimized switching losses during the transition through the Miller Plateau. The switching node (HS pin) can handle negative transient voltage, which allows the high-side channel to be protected from inherent negative voltages caused by parasitic inductance and stray capacitance.

The inputs are independent of supply voltage and are able to withstand -10V and +20V absolute maximum ratings. The low-side and high-side gate drivers are matched to 4ns between the turn on and turn off of each other and are controlled throught the LI and HI input pins respectively. An on-chip 120V rated bootstrap diode eliminates the need to add discrete bootstrap diodes. Undervoltage lockout (UVLO) is provided for both the high-side and the low-side drivers which provides symmetric turn on and turn off behavior and forces the outputs low if the drive voltage is below the specified threshold.
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Technische Dokumentation

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Top-Dokumentation Typ Titel Format-Optionen Neueste englische Version herunterladen Datum
* Datenblatt UCC27311A-Q1 Automotive 120V, 3.7A/4.5A Half-Bridge Driver with 8V UVLO and Enable datasheet (Rev. B) PDF | HTML 23.07.2024
Product overview UCC272xx and UCC273xx: 120V Half-Bridge Gate Drivers for High-Powered Applications (Rev. A) PDF | HTML 02.03.2026
Anwendungshinweis Mapping Application Requirements with the 120V Halfbridge Gate Driver (Rev. A) PDF | HTML 27.02.2026
Anwendungshinweis Riding the Wave of Non-Isolated Gate Drivers in LEVs PDF | HTML 14.11.2025
Anwendungshinweis Selecting Gate Drivers for HVAC Systems (Rev. A) PDF | HTML 07.11.2025
Informationen zur funktionalen Sicherheit UCC273x1A-Q1 Functional Safety FIT Rate, FMD and Pin FMA PDF | HTML 30.09.2024
Anwendungshinweis Using Half-Bridge Gate Driver to Achieve 100% Duty Cycle for High Side FET PDF | HTML 25.03.2024
Anwendungshinweis Challenges and Solutions for Half-Bridge Gate Drivers in Bidirectional DC-DC Converters PDF | HTML 24.01.2024
Anwendungshinweis Bootstrap Circuitry Selection for Half Bridge Configurations (Rev. A) PDF | HTML 08.09.2023
Anwendungshinweis Comparative Analysis of Two Different Methods for Gate-Drive Current Boosting (Rev. A) PDF | HTML 17.02.2022
Anwendungshinweis Voltage Fed Full Bridge DC-DC & DC-AC Converter High-Freq Inverter Using C2000 (Rev. D) 07.04.2021
Anwendungshinweis Implementing High-Side Switches Using Half-Bridge Gate Drivers for 48-V Battery. 12.05.2020
Application brief External Gate Resistor Selection Guide (Rev. A) 28.02.2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 28.02.2020
Application brief Small Price Competitive 100-V Driver for 48-V BLDC Motor Drives 22.10.2019
Anwendungshinweis Maximizing DC/DC converter designs with UCC27282 18.01.2019
Anwendungshinweis UCC27282 Improving motor drive system robustness 11.01.2019
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Application brief Reducing Switching Losses in On-Board Chargers for Electric Vehicles 27.03.2018

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