DRV3233-Q1

ACTIVO

Controlador de compuerta automotriz trifásico para baterías de 12 V y 24 V con detección precisa de

Detalles del producto

Rating Automotive Architecture Gate driver Control interface 1xPWM, 3xPWM, 6xPWM, SPI Gate drive (A) 1 Vs (min) (V) 4.5 Vs ABS (max) (V) 65 Features Current sense Amplifier, Phase Comparators, SPI/I2C, Watchdog timer Operating temperature range (°C) -40 to 150 TI functional safety category Functional Safety-Compliant
Rating Automotive Architecture Gate driver Control interface 1xPWM, 3xPWM, 6xPWM, SPI Gate drive (A) 1 Vs (min) (V) 4.5 Vs ABS (max) (V) 65 Features Current sense Amplifier, Phase Comparators, SPI/I2C, Watchdog timer Operating temperature range (°C) -40 to 150 TI functional safety category Functional Safety-Compliant
HTQFP (PHP) 48 81 mm² (9 mm × 9 mm) VQFN (RGZ) 48 49 mm² (7 mm × 7 mm) WQFN (RRY) 32 24 mm² (6 mm × 4 mm)
  • AEC-Q100 qualified for automotive applications - Temperature options:
    • DRV3233E: –40°C to +150°C, TA
    • DRV3233Q: –40°C to +125°C,TA
  • Functional Safety-Compliant
    • Developed for functional safety applications
    • Documentation to aid ISO 26262 system design available
    • Systematic capability up to ASIL D targeted
  • Three phase half-bridge gate driver
    • Drives six N-channel MOSFETs (NMOS)
    • 4.5 to 60V wide operating voltage range
    • Bootstrap architecture for high-side gate driver
    • Charge pump for 50mA average gate current
    • 100% PWM duty cycle support
    • Overdrive supply of external switches
  • Smart Gate Drive architecture
    • 45-level configurable peak gate drive current up to 1000 / 2000mA (source / sink)
    • Three-step dynamic drive current control
    • Soft shutdown for power stage protection
  • Low-side Current Sense Amplifier
    • Sub-1mV low input offset across temperature
    • 9-level adjustable gain
  • SPI-based detailed configuration and diagnostics
  • DRVOFF pin to disable driver independently
  • High voltage wake up pin (nSLEEP)
  • Multiple PWM interface options available
    • 6x, 3x, 1x PWM Modes
    • PWM over SPI
  • Supports 3.3V, and 5V Logic Inputs
  • Optional programmable OTP for reset settings
  • Advanced and configurable protection features
    • Battery and power supply voltage monitors
    • Phase feedback comparator
    • MOSFET VDS and Rsense over current monitors
    • Analog Built-In-Self-Test, Clock monitors
    • Fault condition indicator pin
  • AEC-Q100 qualified for automotive applications - Temperature options:
    • DRV3233E: –40°C to +150°C, TA
    • DRV3233Q: –40°C to +125°C,TA
  • Functional Safety-Compliant
    • Developed for functional safety applications
    • Documentation to aid ISO 26262 system design available
    • Systematic capability up to ASIL D targeted
  • Three phase half-bridge gate driver
    • Drives six N-channel MOSFETs (NMOS)
    • 4.5 to 60V wide operating voltage range
    • Bootstrap architecture for high-side gate driver
    • Charge pump for 50mA average gate current
    • 100% PWM duty cycle support
    • Overdrive supply of external switches
  • Smart Gate Drive architecture
    • 45-level configurable peak gate drive current up to 1000 / 2000mA (source / sink)
    • Three-step dynamic drive current control
    • Soft shutdown for power stage protection
  • Low-side Current Sense Amplifier
    • Sub-1mV low input offset across temperature
    • 9-level adjustable gain
  • SPI-based detailed configuration and diagnostics
  • DRVOFF pin to disable driver independently
  • High voltage wake up pin (nSLEEP)
  • Multiple PWM interface options available
    • 6x, 3x, 1x PWM Modes
    • PWM over SPI
  • Supports 3.3V, and 5V Logic Inputs
  • Optional programmable OTP for reset settings
  • Advanced and configurable protection features
    • Battery and power supply voltage monitors
    • Phase feedback comparator
    • MOSFET VDS and Rsense over current monitors
    • Analog Built-In-Self-Test, Clock monitors
    • Fault condition indicator pin

The DRV3233-Q1 is an integrated smart gate driver for 12V and 24V automotive three-phase BLDC applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV3233-Q1 generates the correct gate drive voltages using an integrated bootstrap diode and a GVDD charge pump. The Smart Gate Drive architecture supports configurable peak gate drive current from 0.8mA up to 1A source and 2A sink. The DRV3233-Q1 can operate from a single power supply with a wide input range from 4.5 to 60V. A trickle charge pump enables 100% PWM duty cycle control, and provides overdrive supply voltage for external switches.

The DRV3233-Q1 provides low-side current sense amplifiers to support resistor based low-side current sensing. The low offset of the amplifiers enables the system to obtain precise motor current measurement.

A wide range of diagnostics and protection features integrated in the DRV3233-Q1 enable a robust motor drive system design and help eliminate the needs of external components. The highly configurable device response allows the device to be integrated seamlessly into a variety of system designs.

The DRV3233-Q1 is an integrated smart gate driver for 12V and 24V automotive three-phase BLDC applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV3233-Q1 generates the correct gate drive voltages using an integrated bootstrap diode and a GVDD charge pump. The Smart Gate Drive architecture supports configurable peak gate drive current from 0.8mA up to 1A source and 2A sink. The DRV3233-Q1 can operate from a single power supply with a wide input range from 4.5 to 60V. A trickle charge pump enables 100% PWM duty cycle control, and provides overdrive supply voltage for external switches.

The DRV3233-Q1 provides low-side current sense amplifiers to support resistor based low-side current sensing. The low offset of the amplifiers enables the system to obtain precise motor current measurement.

A wide range of diagnostics and protection features integrated in the DRV3233-Q1 enable a robust motor drive system design and help eliminate the needs of external components. The highly configurable device response allows the device to be integrated seamlessly into a variety of system designs.

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Documentación principal Tipo Título Opciones de formato Descargar la versión más reciente en inglés Fecha
* Hoja de datos DRV3233-Q1 Automotive 24/12V Battery 3-Phase Gate Driver Unit With Accurate Current Sensing and Enhanced Diagnostics datasheet (Rev. F) PDF | HTML 27/05/2026
Application brief Understanding Gate Driver Slew Rate Control, MOSFET Switching Optimization and Protection Features (Rev. A) PDF | HTML 11/12/2025
Application brief Striking a Balance: Automotive Designs for Enhanced Efficiency and EMI Control PDF | HTML 2/10/2023

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Diseño de referencia

TIDA-020106 — Diseño de referencia de freno electromecánico (EMB)

El freno electromecánico (EMB) es un nuevo tipo de tecnología de frenado destinada a la electrificación y la inteligencia de los automóviles; proporciona un ahorro general de costos, una respuesta más rápida y un funcionamiento más preciso para una conducción autónoma avanzada. Este diseño de (...)

Productos y hardware compatibles
Encapsulado Pines Símbolos CAD, huellas y modelos 3D
HTQFP (PHP) 48 Ultra Librarian
VQFN (RGZ) 48 Ultra Librarian
WQFN (RRY) 32 Ultra Librarian

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