Controlador de compuerta automotriz trifásico para baterías de 48 V, detección precisa de corriente

Detalles del producto

Rating Automotive Architecture Gate driver Control interface 1xPWM, 3xPWM, 6xPWM, SPI Gate drive (A) 1 Vs (min) (V) 8 Vs ABS (max) (V) 85 Features (x1) PWM, (x3) PWM, Current sense Amplifier, SPI/I2C, Watchdog timer Operating temperature range (°C) -40 to 150 TI functional safety category Functional Safety-Compliant
Rating Automotive Architecture Gate driver Control interface 1xPWM, 3xPWM, 6xPWM, SPI Gate drive (A) 1 Vs (min) (V) 8 Vs ABS (max) (V) 85 Features (x1) PWM, (x3) PWM, Current sense Amplifier, SPI/I2C, Watchdog timer Operating temperature range (°C) -40 to 150 TI functional safety category Functional Safety-Compliant
VQFN (RGZ) 48 49 mm² 7 x 7
  • AEC-Q100 Test Guidance for automotive applications
    • Device ambient temperature: –40°C to +150°C
  • Functional Safety-Compliant
    • Developed for functional safety applications
    • Documentation to aid ISO 26262 system design will be available upon production release
    • Systematic capability up to ASIL D targeted
  • Three phase half-bridge gate driver
    • Drives six N-channel MOSFETs (NMOS)
    • 8 to 85V wide operating voltage range
    • Bootstrap architecture for high-side gate driver
    • 50mA average gate switching current enables driving 400nC MOSFETs at 20kHz
    • Trickle charge pump to support 100% PWM duty cycle and to generate overdrive supply
  • Cutoff driver
    • Drive N-channel MOSFET cutoff switches in multiple topologies
    • Two SPI-controllable channels (DRV3263A) or
    • One channel with SPI or HW pin control (DRV3263B)
  • Smart Gate Drive architecture
    • 15-level configurable peak gate drive current up to 1000 / 2000mA (source / sink)
    • Independently configurable pre-charge and pre-discharge regions
    • Configurable soft shutdown to minimize inductive voltage spikes during overcurrent shutdown
  • Low-side Current Sense Amplifier
    • Sub-1mV low input offset across temperature
    • 8-level adjustable gain
  • SPI-based detailed configuration and diagnostics with OTP memory to store default configuration settings
  • DRVOFF independent driver disable pin
  • High voltage wake up pin (nSLEEP)
  • 6x, 3x, 1x, and Independent PWM modes
  • Supports 3.3V and 5V logic inputs
  • Integrated protection features
    • Battery and power supply voltage monitors
    • MOSFET VDS and Rsense over current monitors
    • MOSFET VGS gate fault monitors
    • Analog Built-In Self-Test (ABIST)
    • Device thermal warning and shutdown
    • Fault condition indicator pin
  • AEC-Q100 Test Guidance for automotive applications
    • Device ambient temperature: –40°C to +150°C
  • Functional Safety-Compliant
    • Developed for functional safety applications
    • Documentation to aid ISO 26262 system design will be available upon production release
    • Systematic capability up to ASIL D targeted
  • Three phase half-bridge gate driver
    • Drives six N-channel MOSFETs (NMOS)
    • 8 to 85V wide operating voltage range
    • Bootstrap architecture for high-side gate driver
    • 50mA average gate switching current enables driving 400nC MOSFETs at 20kHz
    • Trickle charge pump to support 100% PWM duty cycle and to generate overdrive supply
  • Cutoff driver
    • Drive N-channel MOSFET cutoff switches in multiple topologies
    • Two SPI-controllable channels (DRV3263A) or
    • One channel with SPI or HW pin control (DRV3263B)
  • Smart Gate Drive architecture
    • 15-level configurable peak gate drive current up to 1000 / 2000mA (source / sink)
    • Independently configurable pre-charge and pre-discharge regions
    • Configurable soft shutdown to minimize inductive voltage spikes during overcurrent shutdown
  • Low-side Current Sense Amplifier
    • Sub-1mV low input offset across temperature
    • 8-level adjustable gain
  • SPI-based detailed configuration and diagnostics with OTP memory to store default configuration settings
  • DRVOFF independent driver disable pin
  • High voltage wake up pin (nSLEEP)
  • 6x, 3x, 1x, and Independent PWM modes
  • Supports 3.3V and 5V logic inputs
  • Integrated protection features
    • Battery and power supply voltage monitors
    • MOSFET VDS and Rsense over current monitors
    • MOSFET VGS gate fault monitors
    • Analog Built-In Self-Test (ABIST)
    • Device thermal warning and shutdown
    • Fault condition indicator pin

The DRV3263-Q1 is an integrated smart gate driver for 48V automotive three-phase BLDC applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV3263-Q1 generates the correct gate drive voltages using an external 12V supply and an integrated bootstrap diode for the high-side MOSFETs. A trickle charge pump allows for the gate drivers to support 100% PWM duty cycle control and provides overdrive gate drive voltage for driving external switches, which can be controlled through dedicated cutoff driver pins.

The DRV3263-Q1 provides low-side current sense amplifiers to support resistor based low-side current sensing. The low offset and low gain error of the amplifiers enable the system to obtain precise motor current measurements.

A wide range of diagnostics and protection features are integrated with the DRV3263-Q1, enabling a robust motor drive system design and reduce external components. The highly configurable device response allows the device to be integrated seamlessly into a variety of system designs.

The DRV3263-Q1 is an integrated smart gate driver for 48V automotive three-phase BLDC applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV3263-Q1 generates the correct gate drive voltages using an external 12V supply and an integrated bootstrap diode for the high-side MOSFETs. A trickle charge pump allows for the gate drivers to support 100% PWM duty cycle control and provides overdrive gate drive voltage for driving external switches, which can be controlled through dedicated cutoff driver pins.

The DRV3263-Q1 provides low-side current sense amplifiers to support resistor based low-side current sensing. The low offset and low gain error of the amplifiers enable the system to obtain precise motor current measurements.

A wide range of diagnostics and protection features are integrated with the DRV3263-Q1, enabling a robust motor drive system design and reduce external components. The highly configurable device response allows the device to be integrated seamlessly into a variety of system designs.

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Documentación técnica

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* Data sheet DRV3263-Q1 48V Battery 3-Phase Gate Driver Unit with Integrated Cutoff Drivers datasheet PDF | HTML 26 mar 2026

Diseño y desarrollo

Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.

Placa de evaluación

DRV8363-Q1EVM — Módulo de evaluación DRV8363-Q1

El DRV8363-Q1EVM es una etapa de accionamiento de CC trifásica sin escobillas de 30 A basada en el controlador de puerta DRV8363-Q1 para motores BLDC.

El EVM permite evaluar rápidamente el dispositivo DRV8363-Q1, que hace girar un motor BLDC con conmutación y control trapezoidales.

Se incluyen LED (...)

Guía del usuario: PDF | HTML
Herramienta de diseño

DRV3263-Q1-DESIGN-TOOL DRV3263-Q1-DESIGN documentation

Documentation and tools for DRV3263 design support
Productos y hardware compatibles

Productos y hardware compatibles

Herramienta de diseño

DRV3263-Q1-SAFETY-DOCS-DESIGN-TOOL DRV3263-Q1 functional safety documents

DRV3263_Safety_Manual
Productos y hardware compatibles

Productos y hardware compatibles

Encapsulado Pines Símbolos CAD, huellas y modelos 3D
VQFN (RGZ) 48 Ultra Librarian

Pedidos y calidad

Información incluida:
  • RoHS
  • REACH
  • Marcado del dispositivo
  • Acabado de plomo/material de la bola
  • Clasificación de nivel de sensibilidad a la humedad (MSL)/reflujo máximo
  • Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
  • Contenido del material
  • Resumen de calificaciones
  • Monitoreo continuo de confiabilidad
Información incluida:
  • Lugar de fabricación
  • Lugar de ensamblaje

Soporte y capacitación

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