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INA1H182-SEP

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Amplificador de instrumentación baja potencia contra radiación y compensación baja, ruido 7 nV/rtHz

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INA1H182-SEP

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Detalles del producto

Number of channels 1 Vs (max) (V) 18 Vs (min) (V) 4.5 Input offset (±) (max) (µV) 55 Voltage gain (min) (V/V) 1 Voltage gain (max) (V/V) 10000 Noise at 1 kHz (typ) (nV√Hz) 7 Features Overvoltage protection, Small Size, Super-beta CMRR (min) (dB) 136 Input offset drift (±) (max) (µV/°C) 0.4 Input bias current (±) (max) (nA) 0.5 Iq (typ) (mA) 0.6 Bandwidth at min gain (typ) (MHz) 4.7 Gain error (±) (max) (%) 0.15 Operating temperature range (°C) -55 to 125 Rating Space Type Resistor Gain nonlinearity (±) (max) (%) 0.0015 Output swing headroom (to negative supply) (typ) (V) 0.15 Output swing headroom (to positive supply) (typ) (V) -0.15 Input common mode headroom (to negative supply) (typ) (V) 2 Input common mode headroom (to positive supply) (typ) (V) -2 Noise at 0.1 Hz to 10 Hz (typ) (µVPP) 0.14
Number of channels 1 Vs (max) (V) 18 Vs (min) (V) 4.5 Input offset (±) (max) (µV) 55 Voltage gain (min) (V/V) 1 Voltage gain (max) (V/V) 10000 Noise at 1 kHz (typ) (nV√Hz) 7 Features Overvoltage protection, Small Size, Super-beta CMRR (min) (dB) 136 Input offset drift (±) (max) (µV/°C) 0.4 Input bias current (±) (max) (nA) 0.5 Iq (typ) (mA) 0.6 Bandwidth at min gain (typ) (MHz) 4.7 Gain error (±) (max) (%) 0.15 Operating temperature range (°C) -55 to 125 Rating Space Type Resistor Gain nonlinearity (±) (max) (%) 0.0015 Output swing headroom (to negative supply) (typ) (V) 0.15 Output swing headroom (to positive supply) (typ) (V) -0.15 Input common mode headroom (to negative supply) (typ) (V) 2 Input common mode headroom (to positive supply) (typ) (V) -2 Noise at 0.1 Hz to 10 Hz (typ) (µVPP) 0.14
VSSOP (DGK) 8 14.7 mm² 3 x 4.9
  • Radiation tolerant
    • Total ionizing dose (TID) RLAT for every wafer up to 30krad(Si)
    • ELDRS-free up to TID = 30krad(Si)
    • Single event latch-up (SEL) immune to 43MeV×cm2 /mg
    • Single event effect (SEE) characterized to 43MeV×cm2 /mg
  • Space enhanced plastic
    • Supports defense and aerospace applications
    • Controlled baseline
    • One assembly and test site
    • One Fabrication site
    • Extended product life cycle
    • Product traceability
    • Outgassing test performed per ASTM E595
    • Au bondwire and NiPdAu lead finish
  • Low offset voltage: 10µV (typical)
  • Input stage voltage noise: 7nV/√Hz
  • Bandwidth: 2MHz at G = 1, 190kHz at G = 100
  • Inputs protected up to ±40V
  • Common-mode rejection: 110dB, G = 10 (min)
  • Power supply rejection: 110dB, G = 1 (min)
  • Supply current: 650µA (max)
  • Supply range:
    • Single-supply: 4.5V to 18V
    • Dual-supply: ±2.25V to ±9V
  • Packages: 8-pin VSSOP
  • Radiation tolerant
    • Total ionizing dose (TID) RLAT for every wafer up to 30krad(Si)
    • ELDRS-free up to TID = 30krad(Si)
    • Single event latch-up (SEL) immune to 43MeV×cm2 /mg
    • Single event effect (SEE) characterized to 43MeV×cm2 /mg
  • Space enhanced plastic
    • Supports defense and aerospace applications
    • Controlled baseline
    • One assembly and test site
    • One Fabrication site
    • Extended product life cycle
    • Product traceability
    • Outgassing test performed per ASTM E595
    • Au bondwire and NiPdAu lead finish
  • Low offset voltage: 10µV (typical)
  • Input stage voltage noise: 7nV/√Hz
  • Bandwidth: 2MHz at G = 1, 190kHz at G = 100
  • Inputs protected up to ±40V
  • Common-mode rejection: 110dB, G = 10 (min)
  • Power supply rejection: 110dB, G = 1 (min)
  • Supply current: 650µA (max)
  • Supply range:
    • Single-supply: 4.5V to 18V
    • Dual-supply: ±2.25V to ±9V
  • Packages: 8-pin VSSOP

The INA1H182-SEP is a radiation-tolerant, high-precision instrumentation amplifier that offers low power consumption and operates over a wide single-supply or dual-supply range. A single external resistor sets any gain from 1 to 10,000. The device has high precision as a result of super-beta input transistors, which provide low input offset voltage, offset voltage drift, input bias current, and input voltage and current noise. Additional circuitry protects the inputs against overvoltage up to ±40V.

The INA1H182-SEP is optimized to provide a high common-mode rejection ratio. At gain (G) = 1, the common-mode rejection ratio exceeds 90dB across the full input common-mode range. The device is designed for low-voltage operation from a 4.5V single supply, and dual supplies up to ±9V.

The INA1H182-SEP is available in an 8-pin VSSOP package.

The INA1H182-SEP is a radiation-tolerant, high-precision instrumentation amplifier that offers low power consumption and operates over a wide single-supply or dual-supply range. A single external resistor sets any gain from 1 to 10,000. The device has high precision as a result of super-beta input transistors, which provide low input offset voltage, offset voltage drift, input bias current, and input voltage and current noise. Additional circuitry protects the inputs against overvoltage up to ±40V.

The INA1H182-SEP is optimized to provide a high common-mode rejection ratio. At gain (G) = 1, the common-mode rejection ratio exceeds 90dB across the full input common-mode range. The device is designed for low-voltage operation from a 4.5V single supply, and dual supplies up to ±9V.

The INA1H182-SEP is available in an 8-pin VSSOP package.
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Documentación técnica

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Documentación principal Tipo Título Opciones de formato Fecha
* Data sheet INA1H182-SEP Low Offset, 7nV/√ Hz Noise, Low-Power, Radiation-Tolerant, Precision Instrumentation Amplifier in Space-Enhanced Plastic datasheet PDF | HTML 24 mar 2026
* Radiation & reliability report INA1H182-SEP Neutron Displacement Damage (NDD) Characterization 18 mar 2026
* Radiation & reliability report INA1H182-SEP Radiation-Tolerant, Low offset, Low Noise, Precision Instrumentation Amplifier TID Report 18 mar 2026
* Radiation & reliability report INA1H182-SEP Single-Event Effects (SEE) Radiation Report PDF | HTML 18 mar 2026
* Radiation & reliability report INA1H182-SEP Production Flow and Reliability Report PDF | HTML 25 feb 2026
Selection guide TI Space Products (Rev. L) 27 mar 2026

Diseño y desarrollo

Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.

Modelo de simulación

INA1H182-SEP PSpice Model

SLVMER8.ZIP (30 KB) - PSpice Model
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Modelo de simulación

INA1H182-SEP TINA-TI Reference Design

SLVMES0.TSC (1232 KB) - TINA-TI Reference Design
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Modelo de simulación

INA1H182-SEP TINA-TI SPICE Model

SLVMER9.ZIP (6 KB) - TINA-TI Spice Model
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Pedidos y calidad

Información incluida:
  • RoHS
  • REACH
  • Marcado del dispositivo
  • Acabado de plomo/material de la bola
  • Clasificación de nivel de sensibilidad a la humedad (MSL)/reflujo máximo
  • Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
  • Contenido del material
  • Resumen de calificaciones
  • Monitoreo continuo de confiabilidad
Información incluida:
  • Lugar de fabricación
  • Lugar de ensamblaje

Soporte y capacitación

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