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ISO5451

ACTIVO

Controlador de puerta aislada monocanal de 5.7 kVrms, 2.5 A/5 A con funciones de protección activa

Detalles del producto

Number of channels 1 Isolation rating Reinforced Power switch IGBT, MOSFET Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 1000 Transient isolation voltage (VIOTM) (VPK) 8000 Peak output current (A) 5 Peak output current (source) (typ) (A) 2.5 Peak output current (sink) (typ) (A) 5 Features Active miller clamp, Fault reporting, Power good, Short circuit protection Output VCC/VDD (min) (V) 15 Output VCC/VDD (max) (V) 30 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.076 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Catalog Bootstrap supply voltage (max) (V) 1420 Rise time (ns) 18 Fall time (ns) 20 Undervoltage lockout (typ) (V) 12
Number of channels 1 Isolation rating Reinforced Power switch IGBT, MOSFET Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 1000 Transient isolation voltage (VIOTM) (VPK) 8000 Peak output current (A) 5 Peak output current (source) (typ) (A) 2.5 Peak output current (sink) (typ) (A) 5 Features Active miller clamp, Fault reporting, Power good, Short circuit protection Output VCC/VDD (min) (V) 15 Output VCC/VDD (max) (V) 30 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.076 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Catalog Bootstrap supply voltage (max) (V) 1420 Rise time (ns) 18 Fall time (ns) 20 Undervoltage lockout (typ) (V) 12
SOIC (DW) 16 106.09 mm² (10.3 mm × 10.3 mm)
  • 50-kV/µs Minimum and 100-kV/µs Typical Common-Mode Transient Immunity (CMTI) at V CM = 1500 V
  • 2.5-A Peak Source and 5-A Peak Sink Currents
  • Short Propagation Delay: 76 ns (Typ), 110 ns (Max)
  • 2-A Active Miller Clamp
  • Output Short-Circuit Clamp
  • Fault Alarm upon Desaturation Detection is Signaled on FLT and Reset Through RST
  • Input and Output Under Voltage Lock-Out (UVLO) with Ready (RDY) Pin Indication
  • Active Output Pull-down and Default Low Outputs with Low Supply or Floating Inputs
  • 3-V to 5.5-V Input Supply Voltage
  • 15-V to 30-V Output Driver Supply Voltage
  • CMOS Compatible Inputs
  • Rejects Input Pulses and Noise Transients Shorter Than 20 ns
  • Operating Temperature: –40°C to +125°C Ambient
  • Isolation Surge Withstand Voltage 10000-V PK
  • Safety-Related Certifications:
    • 8000-V PK V IOTM and 1420-V PK V IORM Reinforced Isolation per DIN V VDE V 0884-10 (VDE V 0884-10):2006-12
    • 5700-V RMS Isolation for 1 Minute per UL 1577
    • CSA Component Acceptance Notice 5A, IEC 60950–1 and IEC 60601–1 End Equipment Standards
    • TUV Certification per EN 61010-1 and EN 60950-1
    • GB4943.1-2011 CQC Certification
  • 50-kV/µs Minimum and 100-kV/µs Typical Common-Mode Transient Immunity (CMTI) at V CM = 1500 V
  • 2.5-A Peak Source and 5-A Peak Sink Currents
  • Short Propagation Delay: 76 ns (Typ), 110 ns (Max)
  • 2-A Active Miller Clamp
  • Output Short-Circuit Clamp
  • Fault Alarm upon Desaturation Detection is Signaled on FLT and Reset Through RST
  • Input and Output Under Voltage Lock-Out (UVLO) with Ready (RDY) Pin Indication
  • Active Output Pull-down and Default Low Outputs with Low Supply or Floating Inputs
  • 3-V to 5.5-V Input Supply Voltage
  • 15-V to 30-V Output Driver Supply Voltage
  • CMOS Compatible Inputs
  • Rejects Input Pulses and Noise Transients Shorter Than 20 ns
  • Operating Temperature: –40°C to +125°C Ambient
  • Isolation Surge Withstand Voltage 10000-V PK
  • Safety-Related Certifications:
    • 8000-V PK V IOTM and 1420-V PK V IORM Reinforced Isolation per DIN V VDE V 0884-10 (VDE V 0884-10):2006-12
    • 5700-V RMS Isolation for 1 Minute per UL 1577
    • CSA Component Acceptance Notice 5A, IEC 60950–1 and IEC 60601–1 End Equipment Standards
    • TUV Certification per EN 61010-1 and EN 60950-1
    • GB4943.1-2011 CQC Certification

The ISO5451 is a 5.7-kV RMS, reinforced isolated gate driver for IGBTs and MOSFETs with 2.5-A source and 5-A sink current. The input side operates from a single 3-V to 5.5-V supply. The output side allows for a supply range from minimum 15 V to maximum 30 V. Two complementary CMOS inputs control the output state of the gate driver. The short propagation time of 76 ns assures accurate control of the output stage.

An internal desaturation (DESAT) fault detection recognizes when the IGBT is in an overload condition. Upon a DESAT detect, the gate driver output is driven low to V EE2 potential, turning the IGBT immediately off.

When desaturation is active, a fault signal is sent across the isolation barrier, pulling the FLT output at the input side low and blocking the isolator input. The FLT output condition is latched and can be reset through a low-active pulse at the RST input.

When the IGBT is turned off during normal operation with bipolar output supply, the output is hard clamp to V EE2. If the output supply is unipolar, an active Miller clamp can be used, allowing Miller current to sink across a low impedance path, preventing IGBT to be dynamically turned on during high voltage transient conditions.

The readiness for the gate driver to be operated is under the control of two undervoltage-lockout circuits monitoring the input side and output side supplies. If either side has insufficient supply the RDY output goes low, otherwise this output is high.

The ISO5451 is available in a 16-pin SOIC package. Device operation is specified over a temperature range from –40°C to +125°C ambient.

The ISO5451 is a 5.7-kV RMS, reinforced isolated gate driver for IGBTs and MOSFETs with 2.5-A source and 5-A sink current. The input side operates from a single 3-V to 5.5-V supply. The output side allows for a supply range from minimum 15 V to maximum 30 V. Two complementary CMOS inputs control the output state of the gate driver. The short propagation time of 76 ns assures accurate control of the output stage.

An internal desaturation (DESAT) fault detection recognizes when the IGBT is in an overload condition. Upon a DESAT detect, the gate driver output is driven low to V EE2 potential, turning the IGBT immediately off.

When desaturation is active, a fault signal is sent across the isolation barrier, pulling the FLT output at the input side low and blocking the isolator input. The FLT output condition is latched and can be reset through a low-active pulse at the RST input.

When the IGBT is turned off during normal operation with bipolar output supply, the output is hard clamp to V EE2. If the output supply is unipolar, an active Miller clamp can be used, allowing Miller current to sink across a low impedance path, preventing IGBT to be dynamically turned on during high voltage transient conditions.

The readiness for the gate driver to be operated is under the control of two undervoltage-lockout circuits monitoring the input side and output side supplies. If either side has insufficient supply the RDY output goes low, otherwise this output is high.

The ISO5451 is available in a 16-pin SOIC package. Device operation is specified over a temperature range from –40°C to +125°C ambient.

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Documentación técnica

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Documentación principal Tipo Título Opciones de formato Descargar la versión más reciente en inglés Fecha
* Hoja de datos ISO5451 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver With Active Protection Features datasheet (Rev. D) PDF | HTML 30/05/2023
Certificado VDE Certificate for Reinforced Isolation for DIN EN IEC 60747-17 (Rev. AB) 15/07/2026
EVM User's guide UCC2181xx, UCC217xx, and ISO5x5x Evaluation Module (Rev. A) PDF | HTML 8/06/2026
Informe High-voltage reinforced isolation: Definitions and test methodologies (Rev. A) PDF | HTML 12/05/2026
Certificado TUV Certificate for Isolation Devices (Rev. M) 7/05/2026
Certificado UL Certificate of Compliance File E181974 Vol 4 Sec 6 (Rev. S) 7/05/2026
Application brief Does My Design Need a Miller Clamp? PDF | HTML 11/12/2024
Nota sobre la aplicación Choosing Appropriate Protection Approach for IGBT and SiC Power Modules PDF | HTML 19/07/2024
Certificado ISO5x5x CQC Certificate of Product Certification PDF | HTML 7/11/2023
Nota sobre la aplicación Digital Isolator Design Guide (Rev. G) PDF | HTML 13/09/2023
Informe Circuit Board Insulation Design According to IEC60664 for Motor Drive Apps PDF | HTML 31/08/2023
Certificado ISO5451 CQC Certificate of Product Certification PDF | HTML 16/08/2023
Application brief The Use and Benefits of Ferrite Beads in Gate Drive Circuits PDF | HTML 16/12/2021
Certificado CSA Certification (Rev. Q) 14/06/2021
Application brief External Gate Resistor Selection Guide (Rev. A) 28/02/2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 28/02/2020
Libro electrónico E-book: An engineer’s guide to industrial robot designs 12/02/2020
Analog Design Journal Pushing the envelope with high-performance digital-isolation technology (Rev. A) 22/08/2018
Informe Demystifying high-voltage power electronics for solar inverters 6/06/2018
Información sobre seguridad funcional Isolation in solar power converters: Understanding the IEC62109-1 safety standar (Rev. A) 18/05/2018
Analog Design Journal 4Q 2015 Analog Applications Journal 30/10/2015
Artículo técnico What you can do with a high-CMTI isolator PDF | HTML 1/10/2015
Informe Isolation in AC Motor Drives: Understanding the IEC 61800-5-1 Safety Standard (Rev. B) 25/09/2015
Artículo técnico Isolators as insulators: using isolation for electrical safety PDF | HTML 25/08/2015
Informe Understanding electromagnetic compliance tests in digital isolators 17/10/2014
Nota sobre la aplicación Shelf-Life Evaluation of Lead-Free Component Finishes 24/05/2004

Diseño y desarrollo

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Placa de evaluación

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This evaluation module, featuring ISO5851 reinforced isolated gate driver device, allows designers to evaluate device AC and DC performance with a pre-populated 1-nF load or with a user-installed IGBT in either of the standard TO-247 or TO-220 packages.

Guía del usuario: PDF
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