The ONET2804T is a high gain limiting transimpedance amplifier for parallel optical
interconnects with data rates up to 28 Gbps. The device is used in conjunction with a 750 µm pitch
photodiode array to convert an optical signal into a differential output voltage. An internal
circuit provides the photodiode reverse bias voltage and senses the average photocurrent supplied
to each photodiode.
The device can be used with pin control or a two-wire serial interface to allow control
of the output amplitude, gain, bandwidth and input threshold.
The ONET2804T provides 21 GHz bandwidth, a gain of 10 kΩ, an
input referred noise of 1.8 µArms and a received signal strength
indicator (RSSI) for each channel. 40 dB isolation between channels results
in low crosstalk penalty in the receiver.
The part requires a single 3.3 V supply and typically dissipates
139 mW per channel with a differential output amplitude of 500
mVPP. It is characterized for operation from –40°C
to 100°C temperatures and is available in die form with a 750 µm channel pitch.
To request a full data sheet, please send an email to:
onet2804t_request@ti.com.
The ONET2804T is a high gain limiting transimpedance amplifier for parallel optical
interconnects with data rates up to 28 Gbps. The device is used in conjunction with a 750 µm pitch
photodiode array to convert an optical signal into a differential output voltage. An internal
circuit provides the photodiode reverse bias voltage and senses the average photocurrent supplied
to each photodiode.
The device can be used with pin control or a two-wire serial interface to allow control
of the output amplitude, gain, bandwidth and input threshold.
The ONET2804T provides 21 GHz bandwidth, a gain of 10 kΩ, an
input referred noise of 1.8 µArms and a received signal strength
indicator (RSSI) for each channel. 40 dB isolation between channels results
in low crosstalk penalty in the receiver.
The part requires a single 3.3 V supply and typically dissipates
139 mW per channel with a differential output amplitude of 500
mVPP. It is characterized for operation from –40°C
to 100°C temperatures and is available in die form with a 750 µm channel pitch.
To request a full data sheet, please send an email to:
onet2804t_request@ti.com.