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TLC082-Q1

ACTIVO

Amplificador operacional doble de calidad automotriz de 16 V y 10 MHz

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Misma funcionalidad con diferente configuración de pines que el dispositivo comparado
TLV9162-Q1 ACTIVO Amplificador operacional doble de 16 V y 11 MHz de entrada y salida de carril para la industria auto Rail-to-rail I/O, higher GBW (11 MHz), faster slew rate (33 V/us), lower offset voltage (1 mV), lower noise (6.8 nV/√Hz)

TLC082-Q1

ACTIVO
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Detalles del producto

Number of channels 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 4.5 Rail-to-rail In to V- GBW (typ) (MHz) 10 Slew rate (typ) (V/µs) 16 Vos (offset voltage at 25°C) (max) (mV) 1.9 Iq per channel (typ) (mA) 1.8 Vn at 1 kHz (typ) (nV√Hz) 8.5 Rating Automotive Operating temperature range (°C) -40 to 125 Offset drift (typ) (µV/°C) 1.2 Input bias current (max) (pA) 50 CMRR (typ) (dB) 110 Iout (typ) (A) 0.1 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) 0 Input common mode headroom (to positive supply) (typ) (V) -1.5 Output swing headroom (to negative supply) (typ) (V) 0.18 Output swing headroom (to positive supply) (typ) (V) -0.7
Number of channels 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 4.5 Rail-to-rail In to V- GBW (typ) (MHz) 10 Slew rate (typ) (V/µs) 16 Vos (offset voltage at 25°C) (max) (mV) 1.9 Iq per channel (typ) (mA) 1.8 Vn at 1 kHz (typ) (nV√Hz) 8.5 Rating Automotive Operating temperature range (°C) -40 to 125 Offset drift (typ) (µV/°C) 1.2 Input bias current (max) (pA) 50 CMRR (typ) (dB) 110 Iout (typ) (A) 0.1 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) 0 Input common mode headroom (to positive supply) (typ) (V) -1.5 Output swing headroom (to negative supply) (typ) (V) 0.18 Output swing headroom (to positive supply) (typ) (V) -0.7
HVSSOP (DGN) 8 14.7 mm² 3 x 4.9
  • Wide Bandwidth: 10 MHz
  • High-Output Drive
    • IOH: 57 mA at VDD –1.5 V
    • IOL: 55 mA at 0.5 V
  • High Slew Rate
    • SR+: 16 V/μs
    • SR−: 19 V/μs
  • Wide Supply Range: 4.5 V to 16 V
  • Supply Current: 1.9 mA per Channel
  • Low Input Noise Voltage: 8.5 nV√Hz
  • Input Offset Voltage: 60 μV
  • Ultra-Small 8-Pin MSOP-PowerPAD Package for TLC082-Q1

All trademarks are the property of their respective owners.

  • Wide Bandwidth: 10 MHz
  • High-Output Drive
    • IOH: 57 mA at VDD –1.5 V
    • IOL: 55 mA at 0.5 V
  • High Slew Rate
    • SR+: 16 V/μs
    • SR−: 19 V/μs
  • Wide Supply Range: 4.5 V to 16 V
  • Supply Current: 1.9 mA per Channel
  • Low Input Noise Voltage: 8.5 nV√Hz
  • Input Offset Voltage: 60 μV
  • Ultra-Small 8-Pin MSOP-PowerPAD Package for TLC082-Q1

All trademarks are the property of their respective owners.

The TLC08x-Q1 is the first general purpose operational amplifier to highlight TI's BiCMOS technology. The BiMOS family concept is simple: provide an upgrade path for BiFET users who are moving away from dual-supply to single-supply systems and demand higher AC and DC performance. With performance rated from 4.5 V to 16 V across an automotive temperature range (–40°C to 125°C), BiMOS suits a wide range of audio, automotive, industrial, and instrumentation applications.

Developed in TI’s patented LBC3 BiCMOS process, the BiMOS amplifiers combine a very high input impedance, low-noise CMOS front end with a high-drive bipolar output stage, thus providing the optimum performance features of both. AC performance improvements over the TL08x-Q1 BiFET predecessors include a bandwidth of 10 MHz and voltage noise of 8.5 nV/√Hz. These features enable the TLC08x-Q1 devices to be suitable for ADAS (such as short-range radar) and body in automotive. The TLC082-Q1 is also suitable in infotainment and cluster as a pre amp in car audio applications.

DC improvements include an ensured VICR that includes ground, a factor of four reduction in input offset voltage down to 1.5 mV (maximum), and a power-supply rejection improvement of greater than 40 dB to 130 dB. Added to this list of impressive features is the ability to drive ±50-mA loads comfortably from an ultrasmall-footprint MSOP PowerPAD package, which positions the TLC08x-Q1 as the ideal high-performance, general-purpose operational amplifier family.

For all available packages, see the orderable addendum at the end of the data sheet.

The TLC08x-Q1 is the first general purpose operational amplifier to highlight TI's BiCMOS technology. The BiMOS family concept is simple: provide an upgrade path for BiFET users who are moving away from dual-supply to single-supply systems and demand higher AC and DC performance. With performance rated from 4.5 V to 16 V across an automotive temperature range (–40°C to 125°C), BiMOS suits a wide range of audio, automotive, industrial, and instrumentation applications.

Developed in TI’s patented LBC3 BiCMOS process, the BiMOS amplifiers combine a very high input impedance, low-noise CMOS front end with a high-drive bipolar output stage, thus providing the optimum performance features of both. AC performance improvements over the TL08x-Q1 BiFET predecessors include a bandwidth of 10 MHz and voltage noise of 8.5 nV/√Hz. These features enable the TLC08x-Q1 devices to be suitable for ADAS (such as short-range radar) and body in automotive. The TLC082-Q1 is also suitable in infotainment and cluster as a pre amp in car audio applications.

DC improvements include an ensured VICR that includes ground, a factor of four reduction in input offset voltage down to 1.5 mV (maximum), and a power-supply rejection improvement of greater than 40 dB to 130 dB. Added to this list of impressive features is the ability to drive ±50-mA loads comfortably from an ultrasmall-footprint MSOP PowerPAD package, which positions the TLC08x-Q1 as the ideal high-performance, general-purpose operational amplifier family.

For all available packages, see the orderable addendum at the end of the data sheet.
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Documentación técnica

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Tipo Título Fecha
* Data sheet TLC08x-Q1 Wide-Bandwidth High-Output-Drive Single-Supply Operational Amplifiers datasheet (Rev. E) PDF | HTML 12 oct 2016
E-book The Signal e-book: A compendium of blog posts on op amp design topics 28 mar 2017
Application note TLC08x and TLC08xA EMI Immunity Performance 19 ago 2013

Diseño y desarrollo

Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.

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Pedidos y calidad

Información incluida:
  • RoHS
  • REACH
  • Marcado del dispositivo
  • Acabado de plomo/material de la bola
  • Clasificación de nivel de sensibilidad a la humedad (MSL) / reflujo máximo
  • Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
  • Contenido del material
  • Resumen de calificaciones
  • Monitoreo continuo de confiabilidad
Información incluida:
  • Lugar de fabricación
  • Lugar de ensamblaje

Soporte y capacitación

Foros de TI E2E™ con asistencia técnica de los ingenieros de TI

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