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TLE2071AM

ACTIVO

Amplificador operacional simple de calidad militar de entrada JFET, 38 V, 10 MHz, velocidad de subid

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Misma funcionalidad con diferente configuración de pines que el dispositivo comparado
LM158A ACTIVO Amplificador operacional de tensión de offset de 3 mV, 30 V, 700 kHz, de grado militar Wider supply range (3 V to 32 V), lower offset voltage (2 mV), lower power (0.35 mA)
TLC2252AM ACTIVO Amplificador operacional doble LinCMOS™ avanzado con precisión uPower de carril a carril Lower offset voltage (0.85 mV), lower power (0.035 mA), lower noise (19 nV/√Hz)
TLC2262M ACTIVO Amplificador operacional doble de calidad militar de 16 V y 710 kHz Lower power (0.2 mA), lower noise (12 nV/√Hz)

Detalles del producto

Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 38 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 4.5 Rail-to-rail In to V+ GBW (typ) (MHz) 10 Slew rate (typ) (V/µs) 40 Vos (offset voltage at 25°C) (max) (mV) 2 Iq per channel (typ) (mA) 1.7 Vn at 1 kHz (typ) (nV√Hz) 12 Rating Military Operating temperature range (°C) -55 to 125 Offset drift (typ) (µV/°C) 3.2 Input bias current (max) (pA) 175 CMRR (typ) (dB) 98 Iout (typ) (A) 0.03 Architecture FET Input common mode headroom (to negative supply) (typ) (V) 3.1 Input common mode headroom (to positive supply) (typ) (V) 0 Output swing headroom (to negative supply) (typ) (V) 0.8 Output swing headroom (to positive supply) (typ) (V) -0.9
Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 38 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 4.5 Rail-to-rail In to V+ GBW (typ) (MHz) 10 Slew rate (typ) (V/µs) 40 Vos (offset voltage at 25°C) (max) (mV) 2 Iq per channel (typ) (mA) 1.7 Vn at 1 kHz (typ) (nV√Hz) 12 Rating Military Operating temperature range (°C) -55 to 125 Offset drift (typ) (µV/°C) 3.2 Input bias current (max) (pA) 175 CMRR (typ) (dB) 98 Iout (typ) (A) 0.03 Architecture FET Input common mode headroom (to negative supply) (typ) (V) 3.1 Input common mode headroom (to positive supply) (typ) (V) 0 Output swing headroom (to negative supply) (typ) (V) 0.8 Output swing headroom (to positive supply) (typ) (V) -0.9
CDIP (JG) 8 64.032 mm² 9.6 x 6.67 CFP (U) 10 139.36 mm² 21.44 x 6.5 LCCC (FK) 20 79.0321 mm² 8.89 x 8.89
  • Direct Upgrades to TL05x, TL07x, and
    TL08x BiFET Operational Amplifiers
  • Greater Than 2× Bandwidth (10 MHz) and
    3× Slew Rate (45 V/µs) Than TL07x
  • Ensured Maximum Noise Floor 17 nV/Hz
  • On-Chip Offset Voltage Trimming for
    Improved DC Performance
  • Wider Supply Rails Increase Dynamic
    Signal Range to ±19 V

  • Direct Upgrades to TL05x, TL07x, and
    TL08x BiFET Operational Amplifiers
  • Greater Than 2× Bandwidth (10 MHz) and
    3× Slew Rate (45 V/µs) Than TL07x
  • Ensured Maximum Noise Floor 17 nV/Hz
  • On-Chip Offset Voltage Trimming for
    Improved DC Performance
  • Wider Supply Rails Increase Dynamic
    Signal Range to ±19 V

The TLE207x series of JFET-input operational amplifiers more than double the bandwidth and triple the slew rate of the TL07x and TL08x families of BiFET operational amplifiers. Texas Instruments Excalibur process yields a typical noise floor of 11.6 nV/Hz, 17-nV/Hz ensured maximum, offering immediate improvement in noise-sensitive circuits designed using the TL07x. The TLE207x also has wider supply voltage rails, increasing the dynamic signal range for BiFET circuits to ±19 V. On-chip zener trimming of offset voltage yields precision grades for greater accuracy in dc-coupled applications. The TLE207x are pin-compatible with lower performance BiFET operational amplifiers for ease in improving performance in existing designs.

BiFET operational amplifiers offer the inherently higher input impedance of the JFET-input transistors, without sacrificing the output drive associated with bipolar amplifiers. This makes them better suited for interfacing with high-impedance sensors or very low-level ac signals. They also feature inherently better ac response than bipolar or CMOS devices having comparable power consumption.

The TLE207x family of BiFET amplifiers are Texas Instruments highest performance BiFETs, with tighter input offset voltage and ensured maximum noise specifications. Designers requiring less stringent specifications but seeking the improved ac characteristics of the TLE207x should consider the TLE208x operational amplifier family.

Because BiFET operational amplifiers are designed for use with dual power supplies, care must be taken to observe common-mode input voltage limits and output swing when operating from a single supply. DC biasing of the input signal is required and loads should be terminated to a virtual ground node at mid-supply. Texas Instruments TLE2426 integrated virtual ground generator is useful when operating BiFET amplifiers from single supplies.

The TLE207x are fully specified at ±15 V and ±5 V. For operation in low-voltage and/or single-supply systems, Texas Instruments LinCMOS families of operational amplifiers (TLC- and TLV-prefix) are recommended. When moving from BiFET to CMOS amplifiers, particular attention should be paid to slew rate and bandwidth requirements and output loading.

The TLE207x series of JFET-input operational amplifiers more than double the bandwidth and triple the slew rate of the TL07x and TL08x families of BiFET operational amplifiers. Texas Instruments Excalibur process yields a typical noise floor of 11.6 nV/Hz, 17-nV/Hz ensured maximum, offering immediate improvement in noise-sensitive circuits designed using the TL07x. The TLE207x also has wider supply voltage rails, increasing the dynamic signal range for BiFET circuits to ±19 V. On-chip zener trimming of offset voltage yields precision grades for greater accuracy in dc-coupled applications. The TLE207x are pin-compatible with lower performance BiFET operational amplifiers for ease in improving performance in existing designs.

BiFET operational amplifiers offer the inherently higher input impedance of the JFET-input transistors, without sacrificing the output drive associated with bipolar amplifiers. This makes them better suited for interfacing with high-impedance sensors or very low-level ac signals. They also feature inherently better ac response than bipolar or CMOS devices having comparable power consumption.

The TLE207x family of BiFET amplifiers are Texas Instruments highest performance BiFETs, with tighter input offset voltage and ensured maximum noise specifications. Designers requiring less stringent specifications but seeking the improved ac characteristics of the TLE207x should consider the TLE208x operational amplifier family.

Because BiFET operational amplifiers are designed for use with dual power supplies, care must be taken to observe common-mode input voltage limits and output swing when operating from a single supply. DC biasing of the input signal is required and loads should be terminated to a virtual ground node at mid-supply. Texas Instruments TLE2426 integrated virtual ground generator is useful when operating BiFET amplifiers from single supplies.

The TLE207x are fully specified at ±15 V and ±5 V. For operation in low-voltage and/or single-supply systems, Texas Instruments LinCMOS families of operational amplifiers (TLC- and TLV-prefix) are recommended. When moving from BiFET to CMOS amplifiers, particular attention should be paid to slew rate and bandwidth requirements and output loading.

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Documentación técnica

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* Data sheet TLE207x, TLE207xA: Excalibur Low-Noise High-Speed JFET-Input Op Amps datasheet (Rev. C) 09 dic 2009

Pedidos y calidad

Información incluida:
  • RoHS
  • REACH
  • Marcado del dispositivo
  • Acabado de plomo/material de la bola
  • Clasificación de nivel de sensibilidad a la humedad (MSL) / reflujo máximo
  • Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
  • Contenido del material
  • Resumen de calificaciones
  • Monitoreo continuo de confiabilidad
Información incluida:
  • Lugar de fabricación
  • Lugar de ensamblaje

Soporte y capacitación

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