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Amplificadores operacionales (op amps)
Amplificadores de propósito general

TLV2772A-EP

ACTIVO

Amplificador operacional doble de 5.5 V y 5.1 MHz, 1.6 mV de desviación, alta velocidad de subida (1

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Reemplazo con funcionalidad mejorada del dispositivo comparado
OPA4991-EP ACTIVO Amplificador operacional cuádruple de 40 V y 4.5 MHz, con entrada y salida de carril a carril, de pr Rail-to-rail I/O, wider supply range (2.7 V to 40 V), higher gain bandwidth (4.5 MHz), faster slew rate (21 V/µs), lower offset voltage (0.895 mV), lower power (0.56 mA), higher output current (75 mA)
Pin por pin con la misma funcionalidad que el dispositivo comparado
TLV2252A-EP ACTIVO Amplificadores operacionales de muy baja potencia, rail-to-rail, productos mejorados Advanced LinCMO Wider supply range (2.7 V to 16 V), lower offset voltage (0.85 mV), lower power (0.035 mA), wider temp range (-40 to 125)

TLV2772A-EP

ACTIVO
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Detalles del producto

Number of channels 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 2.5 Rail-to-rail In to V-, Out GBW (typ) (MHz) 5.1 Slew rate (typ) (V/µs) 10.5 Vos (offset voltage at 25°C) (max) (mV) 1.6 Iq per channel (typ) (mA) 1 Vn at 1 kHz (typ) (nV√Hz) 17 Rating HiRel Enhanced Product Operating temperature range (°C) -55 to 125 Offset drift (typ) (µV/°C) 2 Input bias current (max) (pA) 60 CMRR (typ) (dB) 96 Iout (typ) (A) 0.04 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) -0.3 Input common mode headroom (to positive supply) (typ) (V) -1.3 Output swing headroom (to negative supply) (typ) (V) 0.1 Output swing headroom (to positive supply) (typ) (V) -0.1
Number of channels 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 2.5 Rail-to-rail In to V-, Out GBW (typ) (MHz) 5.1 Slew rate (typ) (V/µs) 10.5 Vos (offset voltage at 25°C) (max) (mV) 1.6 Iq per channel (typ) (mA) 1 Vn at 1 kHz (typ) (nV√Hz) 17 Rating HiRel Enhanced Product Operating temperature range (°C) -55 to 125 Offset drift (typ) (µV/°C) 2 Input bias current (max) (pA) 60 CMRR (typ) (dB) 96 Iout (typ) (A) 0.04 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) -0.3 Input common mode headroom (to positive supply) (typ) (V) -1.3 Output swing headroom (to negative supply) (typ) (V) 0.1 Output swing headroom (to positive supply) (typ) (V) -0.1
SOIC (D) 8 29.4 mm² 4.9 x 6
  • Controlled Baseline
    • One Assembly/Test Site, One Fabrication Site
  • Extended Temperature Performance of -55°C to 125°C
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree(1)
  • ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
  • High Slew Rate . . . 10.5 V/µs Typ
  • High-Gain Bandwidth . . . 5.1 MHz Typ
  • Supply Voltage Range 2.5 V to 5.5 V
  • Rail-to-Rail Output
  • 360 µV Input Offset Voltage
  • Low Distortion Driving 600- 0.005% THD+N
  • 1 mA Supply Current (Per Channel)
  • 17 nV/Hz Input Noise Voltage
  • 2 pA Input Bias Current
  • Characterized From TA = -55°C to 125°C
  • Micropower Shutdown Mode . . . IDD < 1 µA

(1) Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.
  • Controlled Baseline
    • One Assembly/Test Site, One Fabrication Site
  • Extended Temperature Performance of -55°C to 125°C
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree(1)
  • ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
  • High Slew Rate . . . 10.5 V/µs Typ
  • High-Gain Bandwidth . . . 5.1 MHz Typ
  • Supply Voltage Range 2.5 V to 5.5 V
  • Rail-to-Rail Output
  • 360 µV Input Offset Voltage
  • Low Distortion Driving 600- 0.005% THD+N
  • 1 mA Supply Current (Per Channel)
  • 17 nV/Hz Input Noise Voltage
  • 2 pA Input Bias Current
  • Characterized From TA = -55°C to 125°C
  • Micropower Shutdown Mode . . . IDD < 1 µA

(1) Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.

The TLV277x CMOS operational amplifier family combines high slew rate and bandwidth, rail-to-rail output swing, high output drive, and excellent dc precision. The device provides 10.5 V/µs of slew rate and 5.1 MHz of bandwidth while only consuming 1 mA of supply current per channel. This ac performance is much higher than current competitive CMOS amplifiers. The rail-to-rail output swing and high output drive make these devices a good choice for driving the analog input or reference of analog-to-digital converters. These devices also have low distortion while driving a 600- load for use in telecom systems.

These amplifiers have a 360-µV input offset voltage, a 17 nV/Hz input noise voltage, and a 2-pA input bias current for measurement, medical, and industrial applications. The TLV277x family is also specified across an extended temperature range (-55°C to 125°C), making it useful for automotive systems.

These devices operate from a 2.5-V to 5.5-V single supply voltage and are characterized at 2.7 V and 5 V. The single-supply operation and low power consumption make these devices a good solution for portable applications.

The TLV277x CMOS operational amplifier family combines high slew rate and bandwidth, rail-to-rail output swing, high output drive, and excellent dc precision. The device provides 10.5 V/µs of slew rate and 5.1 MHz of bandwidth while only consuming 1 mA of supply current per channel. This ac performance is much higher than current competitive CMOS amplifiers. The rail-to-rail output swing and high output drive make these devices a good choice for driving the analog input or reference of analog-to-digital converters. These devices also have low distortion while driving a 600- load for use in telecom systems.

These amplifiers have a 360-µV input offset voltage, a 17 nV/Hz input noise voltage, and a 2-pA input bias current for measurement, medical, and industrial applications. The TLV277x family is also specified across an extended temperature range (-55°C to 125°C), making it useful for automotive systems.

These devices operate from a 2.5-V to 5.5-V single supply voltage and are characterized at 2.7 V and 5 V. The single-supply operation and low power consumption make these devices a good solution for portable applications.
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Documentación técnica

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Tipo Título Fecha
* Data sheet Family of 2.7 V High-Slew-Rate Rail-to-Rail Output Op Amps w/Shutdown datasheet (Rev. A) 06 sep 2007
* VID TLV2772A-EP VID V6206607 21 jun 2016
* VID TLV2772A-EP VID V6206607 21 jun 2016
* VID TLV2772A-EP VID V6206607 21 jun 2016
E-book The Signal e-book: A compendium of blog posts on op amp design topics 28 mar 2017

Diseño y desarrollo

Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.

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Herramienta de simulación

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Herramienta de simulación

TINA-TI — Programa de simulación analógica basado en SPICE

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SOIC (D) 8 Ver opciones
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Pedidos y calidad

Información incluida:
  • RoHS
  • REACH
  • Marcado del dispositivo
  • Acabado de plomo/material de la bola
  • Clasificación de nivel de sensibilidad a la humedad (MSL) / reflujo máximo
  • Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
  • Contenido del material
  • Resumen de calificaciones
  • Monitoreo continuo de confiabilidad
Información incluida:
  • Lugar de fabricación
  • Lugar de ensamblaje

Soporte y capacitación

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