TLV8811

ACTIVO

Amplificador operacional de nanopotencia de precisión simple de 425 nA para sistemas de costo optimi

Haga su pedido ahora

Hoja de datos

document-pdfAcrobat TLV8811,TLV8812 425 nA Precision Nanopower Op Amps for Cost-Optimized Systems datasheet (Rev. A) (Inglés) PDF | HTML

TLV8811

ACTIVO

Haga su pedido ahora

Detalles del producto

Number of channels

1

Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)

5.5

Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)

1.7

Vos (offset voltage at 25°C) (max) (mV)

0.55

Offset drift (typ) (µV/°C)

1

GBW (typ) (MHz)

0.006

Features

Cost Optimized, EMI Hardened

Slew rate (typ) (V/µs)

0.0015

Rail-to-rail

In to V-, Out

Iq per channel (typ) (mA)

0.00045

Vn at 1 kHz (typ) (nV√Hz)

450

CMRR (typ) (dB)

95

Rating

Catalog

Operating temperature range (°C)

-40 to 125

Iout (typ) (A)

0.0047

Architecture

CMOS

Input common mode headroom (to negative supply) (typ) (V)

0

Input common mode headroom (to positive supply) (typ) (V)

-0.9

Output swing headroom (to negative supply) (typ) (V)

0.0025

Output swing headroom (to positive supply) (typ) (V)

-0.0035

Number of channels

1

Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)

5.5

Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)

1.7

Vos (offset voltage at 25°C) (max) (mV)

0.55

Offset drift (typ) (µV/°C)

1

GBW (typ) (MHz)

0.006

Features

Cost Optimized, EMI Hardened

Slew rate (typ) (V/µs)

0.0015

Rail-to-rail

In to V-, Out

Iq per channel (typ) (mA)

0.00045

Vn at 1 kHz (typ) (nV√Hz)

450

CMRR (typ) (dB)

95

Rating

Catalog

Operating temperature range (°C)

-40 to 125

Iout (typ) (A)

0.0047

Architecture

CMOS

Input common mode headroom (to negative supply) (typ) (V)

0

Input common mode headroom (to positive supply) (typ) (V)

-0.9

Output swing headroom (to negative supply) (typ) (V)

0.0025

Output swing headroom (to positive supply) (typ) (V)

-0.0035

SOT-23 (DBV)

5

8.12 mm² (2.9 mm × 2.8 mm)

For Cost-Optimized Systems
Nanopower Supply Current: 425 nA/channel
Offset Voltage: 500 µV (max)
TcVos: 1 µV/°C
Gain-Bandwidth: 6 kHz
Unity-Gain Stable
Low Input Bias Current : 100 fA
Wide Supply Range: 1.7 V to 5.5 V
Rail-to-Rail Output
No Output Reversals
EMI Protection
Temperature Range: –40°C to 125°C
Industry Standard Packages:
- Single in 5-pin SOT-23
- Dual in 8-pin VSSOP

For Cost-Optimized Systems
Nanopower Supply Current: 425 nA/channel
Offset Voltage: 500 µV (max)
TcVos: 1 µV/°C
Gain-Bandwidth: 6 kHz
Unity-Gain Stable
Low Input Bias Current : 100 fA
Wide Supply Range: 1.7 V to 5.5 V
Rail-to-Rail Output
No Output Reversals
EMI Protection
Temperature Range: –40°C to 125°C
Industry Standard Packages:
- Single in 5-pin SOT-23
- Dual in 8-pin VSSOP

The TLV8811 (single) and TLV8812 (dual) family of precision ultra-low-power operational amplifiers are ideal for cost-optimized, “Always ON” sensing applications in battery powered wireless and low power wired equipment. With 6 kHz of bandwidth from 425 nA of quiescent current and a trimmed offset voltage to under 500µV, the TLV881x amplifiers provide high precision while minimizing power consumption in equipment such as CO gas detectors and portable electronic devices where operational battery-life is critical. They also have a CMOS input stage enabling fempto-amp bias currents, thereby reducing I_BIAS and I_OS errors that would otherwise impact high source impedance sensing applications. Additionally, built-in EMI protection reduces sensitivity to unwanted RF signals from mobile phones, WiFi, radio transmitters, and tag readers.

The TLV8811 (single) and TLV8812 (dual) channel versions are available in industry standard 5-pin SOT-23 and 8-pin VSSOP packages respectively.

The TLV8811 (single) and TLV8812 (dual) family of precision ultra-low-power operational amplifiers are ideal for cost-optimized, “Always ON” sensing applications in battery powered wireless and low power wired equipment. With 6 kHz of bandwidth from 425 nA of quiescent current and a trimmed offset voltage to under 500µV, the TLV881x amplifiers provide high precision while minimizing power consumption in equipment such as CO gas detectors and portable electronic devices where operational battery-life is critical. They also have a CMOS input stage enabling fempto-amp bias currents, thereby reducing I_BIAS and I_OS errors that would otherwise impact high source impedance sensing applications. Additionally, built-in EMI protection reduces sensitivity to unwanted RF signals from mobile phones, WiFi, radio transmitters, and tag readers.

The TLV8811 (single) and TLV8812 (dual) channel versions are available in industry standard 5-pin SOT-23 and 8-pin VSSOP packages respectively.

filter

Buscar otro/a Amplificadores operacionales de precisión (Vos <1 mV)

Descargar Ver vídeo con transcripción Video

Documentación técnica

No se encontraron resultados. Borre su búsqueda y vuelva a intentarlo.

Ver todo 4

Documentación principal	Tipo	Título	Opciones de formato
*	Hoja de datos	TLV8811,TLV8812 425 nA Precision Nanopower Op Amps for Cost-Optimized Systems datasheet (Rev. A)	PDF \| HTML	16/11/2016
	Nota sobre la aplicación	Nano-Power Transimpedance Amplifier for Current Output Sensors		7/03/2018
	Nota sobre la aplicación	Nano-Power Battery Monitoring in Personal Electronics		8/12/2017
	Libro electrónico	The Signal e-book: A compendium of blog posts on op amp design topics	PDF \| HTML	28/03/2017

Diseño y desarrollo

Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.

Placa de evaluación

AMP-PDK-EVM — Módulo de evaluación del kit de desarrollo del rendimiento del amplificador

El kit de desarrollo del rendimiento (PDK) del amplificador es un kit de módulo de evaluación (EVM) para probar los parámetros comunes del amplificador operacional y es compatible con la mayoría de los amplificadores operacionales y comparadores. El kit de EVM ofrece una placa principal con varias (...)

Guía del usuario: PDF | HTML