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TPS7H1111-SP

ACTIVO

Radiation-hardened, QML-P and QML-V, 1.5A ultra-low-noise high-PSRR low-dropout (LDO) regulator

Detalles del producto

Rating Space Vin (max) (V) 7 Vin (min) (V) 0.85 Iout (max) (A) 1.5 Output options Adjustable Output Vout (max) (V) 5.5 Vout (min) (V) 0.4 Noise (µVrms) 1.7 PSRR at 100 KHz (dB) 71 Iq (typ) (mA) 19 Features Enable, Power good, Radiation hardened, Soft start Thermal resistance θJA (°C/W) 25.1 Load capacitance (min) (µF) 132 Regulated outputs (#) 1 Accuracy (%) 1.3 Dropout voltage (Vdo) (typ) (mV) 215 Operating temperature range (°C) -55 to 125 Radiation, SEL (MeV·cm2/mg) 75 Radiation, TID (typ) (krad) 100
Rating Space Vin (max) (V) 7 Vin (min) (V) 0.85 Iout (max) (A) 1.5 Output options Adjustable Output Vout (max) (V) 5.5 Vout (min) (V) 0.4 Noise (µVrms) 1.7 PSRR at 100 KHz (dB) 71 Iq (typ) (mA) 19 Features Enable, Power good, Radiation hardened, Soft start Thermal resistance θJA (°C/W) 25.1 Load capacitance (min) (µF) 132 Regulated outputs (#) 1 Accuracy (%) 1.3 Dropout voltage (Vdo) (typ) (mV) 215 Operating temperature range (°C) -55 to 125 Radiation, SEL (MeV·cm2/mg) 75 Radiation, TID (typ) (krad) 100
HTSSOP (PWP) 28 62.08 mm² (9.7 mm × 6.4 mm) CFP (HBL) 14 73.20624 mm² (9.12 mm × 8.027 mm)
  • Total ionizing dose (TID) characterized
    • Radiation hardness assurance (RHA) availability of 100 krad(Si) or 50 krad(Si)
  • Single-Event Effects (SEE) characterized
    • Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune up to linear energy transfer (LET) = 75 MeV-cm2/mg
    • Single-event functional interrupt (SEFI) and single-event transient (SET) characterized up to LET = 75 MeV-cm2/mg
  • Ultra-low noise (10 Hz to 100 kHz):
    • 1.71 µVRMS (typ)
  • High power-supply rejection ratio, PSRR (typ):
    • 109 dB at 1 kHz
    • 71 dB at 100 kHz
    • 66 dB at 1 MHz
  • Input voltage range from 0.85 V to 7 V
  • Bias supply of 2.2 V to 14 V to minimize power dissipation
  • Output voltage as low as 0.4 V
  • Up to 1.5-A output current
  • Excellent output accuracy over line and load:
    • –1.3% to +1.2% across temperature
    • –0.7% to +0.9% at 25°C
  • Low-dropout: 215 mV (typ) at 1.5 A
  • Programmable soft-start control (SS_SET)
  • Open-drain power good (PG) indicator
  • Configurable power good threshold (FB_PG)
  • Exposed control loop with the external compensation STAB pin
  • Internal current limit with configurable behavior
  • Current sharing to allow operation of up to 2.9 A
  • Military temperature range (–55°C to 125°C)
  • Total ionizing dose (TID) characterized
    • Radiation hardness assurance (RHA) availability of 100 krad(Si) or 50 krad(Si)
  • Single-Event Effects (SEE) characterized
    • Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune up to linear energy transfer (LET) = 75 MeV-cm2/mg
    • Single-event functional interrupt (SEFI) and single-event transient (SET) characterized up to LET = 75 MeV-cm2/mg
  • Ultra-low noise (10 Hz to 100 kHz):
    • 1.71 µVRMS (typ)
  • High power-supply rejection ratio, PSRR (typ):
    • 109 dB at 1 kHz
    • 71 dB at 100 kHz
    • 66 dB at 1 MHz
  • Input voltage range from 0.85 V to 7 V
  • Bias supply of 2.2 V to 14 V to minimize power dissipation
  • Output voltage as low as 0.4 V
  • Up to 1.5-A output current
  • Excellent output accuracy over line and load:
    • –1.3% to +1.2% across temperature
    • –0.7% to +0.9% at 25°C
  • Low-dropout: 215 mV (typ) at 1.5 A
  • Programmable soft-start control (SS_SET)
  • Open-drain power good (PG) indicator
  • Configurable power good threshold (FB_PG)
  • Exposed control loop with the external compensation STAB pin
  • Internal current limit with configurable behavior
  • Current sharing to allow operation of up to 2.9 A
  • Military temperature range (–55°C to 125°C)

The TPS7H1111 is an ultra-low noise, high PSRR, low dropout linear regulator (LDO) optimized for powering radio-frequency (RF) devices in a space environment. It is capable of sourcing up to 1.5 A over a 0.85-V to 7-V input range with a 2.2-V to 14-V bias supply.

The high performance of the device limits power-supply generated phase noise and clock jitter, making this device ideal for powering high-performance ADCs, DACs, VCOs, PLLs, SerDes, and other RF components in satellites. For digital loads (such as FPGAs and DSPs) requiring low voltage operation, the exceptional accuracy and excellent transient performance ensure optimal system performance.

A standard microcircuit drawing (SMD) is available for the QML variants, 5962R21203. A vendor item drawing (VID) is available for the -SEP variant, V62/23602.

The TPS7H1111 is an ultra-low noise, high PSRR, low dropout linear regulator (LDO) optimized for powering radio-frequency (RF) devices in a space environment. It is capable of sourcing up to 1.5 A over a 0.85-V to 7-V input range with a 2.2-V to 14-V bias supply.

The high performance of the device limits power-supply generated phase noise and clock jitter, making this device ideal for powering high-performance ADCs, DACs, VCOs, PLLs, SerDes, and other RF components in satellites. For digital loads (such as FPGAs and DSPs) requiring low voltage operation, the exceptional accuracy and excellent transient performance ensure optimal system performance.

A standard microcircuit drawing (SMD) is available for the QML variants, 5962R21203. A vendor item drawing (VID) is available for the -SEP variant, V62/23602.

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Documentación técnica

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Documentación principal Tipo Título Opciones de formato Descargar la versión más reciente en inglés Fecha
* Hoja de datos TPS7H1111-SP and TPS7H1111-SEP 1.5-A, Ultra-Low Noise, High PSRR Radiation Hardened Low Dropout (LDO) Linear Regulator datasheet (Rev. F) PDF | HTML 6/12/2023
* Informe de radiación y confiabilidad TPS7H1111-QMLP Total Ionizing Dose (TID) (Rev. A) 18/02/2026
* Informe de radiación y confiabilidad TPS7H1111-SP Total Ionizing Dose (TID) Radiation Report (Rev. C) PDF | HTML 15/08/2023
* Informe de radiación y confiabilidad TPS7H1111-SP Neutron Displacement Damage (NDD) Characterization Report (Rev. A) PDF | HTML 30/05/2023
* Informe de radiación y confiabilidad Single Event Effects Report of the TPS7H1111-SP 6/01/2023
* SMD TPS7H1111-SP SMD 5962-21203 21/12/2023
Guía de selección TI Space Products (Rev. L) 27/03/2026
Informe Demystifying LDO Turn-On (Start-Up) Time (Rev. B) PDF | HTML 10/03/2026
Nota sobre la aplicación Hermetic Package Reflow Profiles, Termination Finishes, and Lead Trim and Form (Rev. A) PDF | HTML 5/11/2025
Informe Reduce System Noise Using Parallel LDOs PDF | HTML 3/11/2025
Application brief DLA Approved Optimizations for QML Products (Rev. C) PDF | HTML 17/06/2025
Nota sobre la aplicación Heavy Ion Orbital Environment Single-Event Effects Estimations (Rev. B) PDF | HTML 10/06/2025
Más documentación TI Engineering Evaluation Units vs. MIL-PRF-38535 QML Class V Processing (Rev. B) 20/02/2025
Artículo técnico Maximizing performance with clean and low-noise power using space-grade LDOs PDF | HTML 5/01/2024
Nota sobre la aplicación QML flow, its importance, and obtaining lot information (Rev. C) 30/08/2023
Application brief TPS7H1111-SxP Pin Failure Mode Analysis (FMA) PDF | HTML 2/05/2023
Guía del usuario TPS7H1111EVM-CVAL User's Guide PDF | HTML 2/02/2023
Informe Parallel LDO Architecture Design Using Ballast Resistors PDF | HTML 14/12/2022
Informe Comprehensive Analysis and Universal Equations for Parallel LDO's Using Ballast PDF | HTML 13/12/2022
Nota sobre la aplicación Single-Event Effects Confidence Interval Calculations (Rev. A) PDF | HTML 19/10/2022
Nota sobre la aplicación DLA Standard Microcircuit Drawings (SMD) and JAN Part Numbers Primer 21/08/2020
Libro electrónico Radiation Handbook for Electronics (Rev. A) 21/05/2019

Diseño y desarrollo

Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.

Placa de evaluación

TPS7H1111EVM-CVAL — Módulo de evaluación TPS7H1111-SP para regulador RF LDO de 1.5 A de ruido ultrabajo con PSRR ultraal

El módulo de evaluación (EVM) TPS7H1111EVM-CVAL es una demostración de ingeniería para el TPS7H1111-SP con protección contra la radiación (RHA), que es un regulador lineal de caída baja (LDO).

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Modelo de simulación

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Herramienta de cálculo

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Encapsulado Pines Símbolos CAD, huellas y modelos 3D
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Pedidos y calidad

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