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TPS7H2201-SEP

ACTIVO

Radiation-tolerant, 1.5V to 7V input 6A eFuse

Detalles del producto

Vabsmax_cont (V) 7.5 Vin (max) (V) 7 Vin (min) (V) 1.5 Current limit (max) (A) 7.5 Current limit (min) (A) 0.5 Features Current monitoring, Overcurrent protection, Overvoltage protection, Reverse current blocking always, Soft-start, Thermal shutdown Overcurrent response Circuit breaker, Current limiting Fault response Auto-retry Ron (typ) (mΩ) 20 Overvoltage response Cut-off Rating Space Soft start Adjustable Quiescent current (Iq) (typ) (A) 0.0058 Quiescent current (Iq) (max) (A) 0.008 Device type eFuses and hot swap controllers Operating temperature range (°C) -55 to 125
Vabsmax_cont (V) 7.5 Vin (max) (V) 7 Vin (min) (V) 1.5 Current limit (max) (A) 7.5 Current limit (min) (A) 0.5 Features Current monitoring, Overcurrent protection, Overvoltage protection, Reverse current blocking always, Soft-start, Thermal shutdown Overcurrent response Circuit breaker, Current limiting Fault response Auto-retry Ron (typ) (mΩ) 20 Overvoltage response Cut-off Rating Space Soft start Adjustable Quiescent current (Iq) (typ) (A) 0.0058 Quiescent current (Iq) (max) (A) 0.008 Device type eFuses and hot swap controllers Operating temperature range (°C) -55 to 125
HTSSOP (DAP) 32 89.1 mm² (11 mm × 8.1 mm)
  • Standard micro circuit available, SMD 5962R17220
  • Vendor item drawing available, VID V62/23608
  • Radiation performance:
    • Radiation hardness assurance (RHA) up to TID 100krad(Si)
    • Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) immune to LET = 75MeV-cm2/mg
    • SEFI/SET characterized to LET = 75MeV-cm2/mg
  • Integrated single channel eFuse
  • Input voltage range: 1.5V to 7V
  • Low on-resistance (RON) of:
    • 35mΩ maximum at 25°C and VIN = 5V for CFP and KGD
    • 23mΩ maximum at 25°C and VIN = 5V for HTSSOP
  • 6A maximum continuous switch current
  • Low control input threshold enables use of 1.2, 1.8, 2.5, and 3.3V logic
  • Configurable rise time (soft start)
  • Reverse current protection
  • Programmable and internal current limiting (fast-trip)
  • Programmable fault timer (current limit and retry modes)
  • Thermal shutdown
  • Ceramic and plastic package with thermal pad
  • Standard micro circuit available, SMD 5962R17220
  • Vendor item drawing available, VID V62/23608
  • Radiation performance:
    • Radiation hardness assurance (RHA) up to TID 100krad(Si)
    • Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) immune to LET = 75MeV-cm2/mg
    • SEFI/SET characterized to LET = 75MeV-cm2/mg
  • Integrated single channel eFuse
  • Input voltage range: 1.5V to 7V
  • Low on-resistance (RON) of:
    • 35mΩ maximum at 25°C and VIN = 5V for CFP and KGD
    • 23mΩ maximum at 25°C and VIN = 5V for HTSSOP
  • 6A maximum continuous switch current
  • Low control input threshold enables use of 1.2, 1.8, 2.5, and 3.3V logic
  • Configurable rise time (soft start)
  • Reverse current protection
  • Programmable and internal current limiting (fast-trip)
  • Programmable fault timer (current limit and retry modes)
  • Thermal shutdown
  • Ceramic and plastic package with thermal pad

The TPS7H2201 is a single channel eFuse that provides configurable rise time to minimize inrush current and reverse current protection. The device contains a P-channel MOSFET that can operate over an input voltage range of 1.5V to 7V and can support a maximum continuous current of 6A. The switch is controlled by an on and off input (EN), which is capable of interfacing directly with low-voltage control signals.

The TPS7H2201 is available in a ceramic and plastic package with integrated thermal pad allowing for high power dissipation. The device is characterized for operation over the free-air temperature range of –55°C to 125°C.

The TPS7H2201 is a single channel eFuse that provides configurable rise time to minimize inrush current and reverse current protection. The device contains a P-channel MOSFET that can operate over an input voltage range of 1.5V to 7V and can support a maximum continuous current of 6A. The switch is controlled by an on and off input (EN), which is capable of interfacing directly with low-voltage control signals.

The TPS7H2201 is available in a ceramic and plastic package with integrated thermal pad allowing for high power dissipation. The device is characterized for operation over the free-air temperature range of –55°C to 125°C.

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Documentación técnica

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Documentación principal Tipo Título Opciones de formato Descargar la versión más reciente en inglés Fecha
* Hoja de datos TPS7H2201-SP and TPS7H2201-SEP Radiation Hardened 1.5V to 7V, 6A eFuse datasheet (Rev. G) PDF | HTML 2/12/2025
* Informe de radiación y confiabilidad TPS7H2201-SEP Production Flow and Reliability Report PDF | HTML 29/09/2023
* Informe de radiación y confiabilidad TPS7H2201-SEP TID Radiation Report (Rev. A) PDF | HTML 18/09/2023
* Informe de radiación y confiabilidad TPS7H2201-SEP Neutron Displacement (NDD) Characterization Report PDF | HTML 29/08/2023
* Informe de radiación y confiabilidad Single Event Effects Report of the TPS7H2201-SEP eFuse and Load Switch PDF | HTML 24/08/2023
* VID TPS7H2201-SEP VID V62-23608 1/05/2024
Guía de selección TI Space Products (Rev. L) 27/03/2026
Artículo técnico How Space Enhanced Products Address Challenges in low Earth orbit Applications (Rev. A) PDF | HTML 18/12/2023
Certificado TPS7H2201EVM EU Declaration of Conformity (DoC) 19/06/2023
Nota sobre la aplicación Reduce the Risk in Low-Earth Orbit Missions with Space Enhanced Plastic Products (Rev. A) PDF | HTML 15/09/2022
Artículo técnico Simplifying radiation-hardened power-supply design with eFuses PDF | HTML 14/07/2020
Nota sobre la aplicación Failure Containment in Spacecraft Point-of-Load Power Supplies PDF | HTML 30/04/2020
Libro electrónico Radiation Handbook for Electronics (Rev. A) 21/05/2019
Artículo técnico When failure isn’t an option: power up your next satellite with integrated functio PDF | HTML 30/04/2019

Diseño y desarrollo

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