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TPSI2072-Q1

ACTIVO

Interruptor aislado de dos canales para uso automotriz, 600 V, 50 mA, con clasificación de avalan

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NUEVO TPSI2260-Q1 ACTIVO Interruptor automotriz aislado de 50 mA, 600 V con aislación reforzada y protección contra avalancha Automotive 600V, 50mA Isolated Switch with Reinforced Isolation. Improved Emissions.

Detalles del producto

FET Internal Number of channels 2 Switching voltage (max) (V) 600 Rating Automotive Withstand isolation voltage (VISO) (Vrms) 3750 Features 2-mA avalanche current Imax (mA) 50 Ron (typ) (Ω) 65 TI functional safety category Functional Safety-Capable Operating temperature range (°C) -40 to 125 OFF-state leakage current (µA) 1 Isolation rating Basic Surge isolation voltage (VIOSM) (VPK) 5000 Working isolation voltage (VIOWM) (Vrms) 1000
FET Internal Number of channels 2 Switching voltage (max) (V) 600 Rating Automotive Withstand isolation voltage (VISO) (Vrms) 3750 Features 2-mA avalanche current Imax (mA) 50 Ron (typ) (Ω) 65 TI functional safety category Functional Safety-Capable Operating temperature range (°C) -40 to 125 OFF-state leakage current (µA) 1 Isolation rating Basic Surge isolation voltage (VIOSM) (VPK) 5000 Working isolation voltage (VIOWM) (Vrms) 1000
SOIC (DWQ) 11 106.09 mm² (10.3 mm × 10.3 mm)
  • Qualified for automotive applications
    • AEC-Q100 grade 1: –40 to 125°C T A
  • Integrated avalanche rated MOSFETs
    • Designed and qualified for reliability for dielectric withstand testing (Hi-Pot)
      • I AVA = 2-mA for 5-s pulses, 1-mA for 60-s pulses
      • V HIPOT, 5-s = 4300-V with R series > 1.83-MΩ
      • V HIPOT, 5-s = 2850-V with R series > 1.1-MΩ
    • 600-V standoff voltage
    • R ON = 65-Ω (T J = 25°C)
    • I OFF = 1-µA at 500-V (T J = 105°C)
  • Low primary side supply current
    • 5-mA single channel, 9-mA two channel ON state current
  • Functional Safety Capable
  • Robust isolation barrier:
    • > 26 year projected lifetime at 1000-V RMS / 1500-V DC working voltage
    • Isolation rating, V ISO, up to 3750-V RMS / 5300-V DC
  • SOIC 11-pin (DWQ) package with wide pins for improved thermal performance
    • Creepage and clearance ≥ 8-mm (primary-secondary)
    • Creepage and clearance ≥ 3-mm (across switch terminals)
  • Safety-related certifications
    • (Planned) DIN VDE V 0884-11:2017-01
    • (Planned) UL 1577 component recognition program
  • Qualified for automotive applications
    • AEC-Q100 grade 1: –40 to 125°C T A
  • Integrated avalanche rated MOSFETs
    • Designed and qualified for reliability for dielectric withstand testing (Hi-Pot)
      • I AVA = 2-mA for 5-s pulses, 1-mA for 60-s pulses
      • V HIPOT, 5-s = 4300-V with R series > 1.83-MΩ
      • V HIPOT, 5-s = 2850-V with R series > 1.1-MΩ
    • 600-V standoff voltage
    • R ON = 65-Ω (T J = 25°C)
    • I OFF = 1-µA at 500-V (T J = 105°C)
  • Low primary side supply current
    • 5-mA single channel, 9-mA two channel ON state current
  • Functional Safety Capable
  • Robust isolation barrier:
    • > 26 year projected lifetime at 1000-V RMS / 1500-V DC working voltage
    • Isolation rating, V ISO, up to 3750-V RMS / 5300-V DC
  • SOIC 11-pin (DWQ) package with wide pins for improved thermal performance
    • Creepage and clearance ≥ 8-mm (primary-secondary)
    • Creepage and clearance ≥ 3-mm (across switch terminals)
  • Safety-related certifications
    • (Planned) DIN VDE V 0884-11:2017-01
    • (Planned) UL 1577 component recognition program

The TPSI2072-Q1 is a two channel isolated solid state relay designed for high voltage automotive and industrial applications. The TPSI2072-Q1 uses TI’s high reliability capacitive isolation technology in combination with internal back-to-back MOSFETs to form a completely integrated solution requiring no secondary side power supply. The TPSI2072-Q1 improves system reliability as TI’s capacitive isolation technology does not suffer from mechanical wearout or photo degradation failure modes common in mechanical relay and photo relay components.

The primary side of the device is powered by only 9 mA of input current and incorporates fail-safe EN1 and EN2 pins preventing any possibility of back powering the VDD supply. In most applications, the VDD pin of the device should be connected to a system supply between 4.5 V–20 V and the EN1 and EN2 pins of the device should be driven by a GPIO output with logic HI between 2.1 V–20 V. In other applications, the VDD, EN1, and EN2 pins could be driven together directly from the system supply or from a GPIO output.

Each channel on the secondary side consists of back-to-back MOSFETs with a standoff voltage of +/-600 V from SM to S1 and SM to S2. The TPSI2072-Q1 MOSFET’s avalanche robustness and thermally conscious package design allow it to robustly support system level dielectric withstand testing (HiPot) and DC fast charger surge currents of up to 2 mA without requiring any external components.

The TPSI2072-Q1 is a two channel isolated solid state relay designed for high voltage automotive and industrial applications. The TPSI2072-Q1 uses TI’s high reliability capacitive isolation technology in combination with internal back-to-back MOSFETs to form a completely integrated solution requiring no secondary side power supply. The TPSI2072-Q1 improves system reliability as TI’s capacitive isolation technology does not suffer from mechanical wearout or photo degradation failure modes common in mechanical relay and photo relay components.

The primary side of the device is powered by only 9 mA of input current and incorporates fail-safe EN1 and EN2 pins preventing any possibility of back powering the VDD supply. In most applications, the VDD pin of the device should be connected to a system supply between 4.5 V–20 V and the EN1 and EN2 pins of the device should be driven by a GPIO output with logic HI between 2.1 V–20 V. In other applications, the VDD, EN1, and EN2 pins could be driven together directly from the system supply or from a GPIO output.

Each channel on the secondary side consists of back-to-back MOSFETs with a standoff voltage of +/-600 V from SM to S1 and SM to S2. The TPSI2072-Q1 MOSFET’s avalanche robustness and thermally conscious package design allow it to robustly support system level dielectric withstand testing (HiPot) and DC fast charger surge currents of up to 2 mA without requiring any external components.

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Documentación técnica

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Documentación principal Tipo Título Opciones de formato Descargar la versión más reciente en inglés Fecha
* Hoja de datos TPSI2072-Q1 2-Channel 600-V, 50-mA, Automotive Isolated Switch with 2-mA Avalanche Rating for Insulation Monitoring and High Voltage Measurements datasheet PDF | HTML 30/06/2023
Nota sobre la aplicación Basics of Solid-State Relays PDF | HTML 24/07/2024
Información sobre seguridad funcional TPSI2072-Q1 Functional Safety, FIT Rate, Failure Mode Distribution and Pin FMA 30/06/2023
Certificado TPSI2072Q1EVM EU Declaration of Conformity (DoC) 27/06/2023
Product overview When to use SSR or Isolated Gate Driver PDF | HTML 4/08/2022

Diseño y desarrollo

Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.

Placa de evaluación

TPSI2072Q1EVM — Módulo de evaluación TPSI2072-Q1 para interruptor aislado de 600 V de 2 canales

El TPSI2072-Q1 es una placa de dos capas de cobre que contiene múltiples puntos de prueba y puentes para evaluar completamente la funcionalidad del dispositivo.
Guía del usuario: PDF | HTML
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