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TPSI2260-Q1

ACTIVO

Interruptor automotriz aislado de 50 mA, 600 V con aislación reforzada y protección contra avalancha

Detalles del producto

FET Internal Number of channels 1 Switching voltage (max) (V) 600 Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 20 Rating Automotive Features 2-mA avalanche current, Capacitive isolation Withstand isolation voltage (VISO) (Vrms) 5000 Imax (mA) 50 Ron (typ) (Ω) 70 TI functional safety category Functional Safety-Capable Operating temperature range (°C) -40 to 125 OFF-state leakage current (µA) 1 Isolation rating Reinforced Surge isolation voltage (VIOSM) (VPK) 10000 Working isolation voltage (VIOWM) (Vrms) 1000
FET Internal Number of channels 1 Switching voltage (max) (V) 600 Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 20 Rating Automotive Features 2-mA avalanche current, Capacitive isolation Withstand isolation voltage (VISO) (Vrms) 5000 Imax (mA) 50 Ron (typ) (Ω) 70 TI functional safety category Functional Safety-Capable Operating temperature range (°C) -40 to 125 OFF-state leakage current (µA) 1 Isolation rating Reinforced Surge isolation voltage (VIOSM) (VPK) 10000 Working isolation voltage (VIOWM) (Vrms) 1000
SOIC (DWQ) 11 106.09 mm² 10.3 x 10.3
  • Qualified for automotive applications
    • AEC-Q100 grade 1: –40 to 125°C TA
  • Low EMI:
    • Meets CISPR25 class 5 performance with no additional components
  • Integrated avalanche rated MOSFETs
    • Designed and qualified for reliability for dielectric withstand testing (Hi-Pot)
      • TPSI2260-Q1: IAVA =1mA for 60s pulses
      • TPSI2260T-Q1: IAVA = 3mA for 60s pulses
    • 600V standoff voltage
    • RON = 65Ω (TJ = 25°C)
    • IOFF = 1.22µA at 500V (TJ = 105°C)
  • Low primary side supply current
    • 5mA ON state current
    • 3.5µA OFF state current (TJ = 25°C)
  • Functional Safety Capable
  • Robust isolation barrier:
    • > 30 year projected lifetime at 1500VRMS / 2120DC working voltage
    • Reinforced isolation rating, VISO, up to 5000VRMS
  • SOIC 11-pin (DWQ) package with wide pins for improved thermal performance
    • Creepage and clearance ≥ 8mm (primary-secondary)
    • Creepage and clearance ≥ 6mm (across switch terminals)
  • Safety-Related Certifications
    • (Planned) DIN EN IEC 60747-17 (VDE 0884-17)
    • (Planned) UL 1577 component recognition program
  • Qualified for automotive applications
    • AEC-Q100 grade 1: –40 to 125°C TA
  • Low EMI:
    • Meets CISPR25 class 5 performance with no additional components
  • Integrated avalanche rated MOSFETs
    • Designed and qualified for reliability for dielectric withstand testing (Hi-Pot)
      • TPSI2260-Q1: IAVA =1mA for 60s pulses
      • TPSI2260T-Q1: IAVA = 3mA for 60s pulses
    • 600V standoff voltage
    • RON = 65Ω (TJ = 25°C)
    • IOFF = 1.22µA at 500V (TJ = 105°C)
  • Low primary side supply current
    • 5mA ON state current
    • 3.5µA OFF state current (TJ = 25°C)
  • Functional Safety Capable
  • Robust isolation barrier:
    • > 30 year projected lifetime at 1500VRMS / 2120DC working voltage
    • Reinforced isolation rating, VISO, up to 5000VRMS
  • SOIC 11-pin (DWQ) package with wide pins for improved thermal performance
    • Creepage and clearance ≥ 8mm (primary-secondary)
    • Creepage and clearance ≥ 6mm (across switch terminals)
  • Safety-Related Certifications
    • (Planned) DIN EN IEC 60747-17 (VDE 0884-17)
    • (Planned) UL 1577 component recognition program

The TPSI2260-Q1 is an isolated solid state relay designed for high voltage automotive and industrial applications. The TPSI2260-Q1 uses TI’s high reliability reinforced capacitive isolation technology in combination with internal back-to-back MOSFETs to form a completely integrated solution requiring no secondary side power supply. The TPSI2260-Q1 improves system reliability as TI’s capacitive isolation technology does not suffer from mechanical wearout or photo degradation failure modes common in mechanical relay and photo relay components.

The primary side of the device is powered by only 5mA of input current and incorporates a fail-safe EN pin preventing any possibility of back powering the VDD supply. In most applications, the VDD pin of the device should be connected to a system supply between 4.5V to 20V and the EN pin of the device should be driven by a GPIO output with Logic high between 2.1V to 20V. In other applications, the VDD and EN pins could be driven together driven together directly from the system supply or from a GPIO output.

The secondary side consists of back-to-back MOSFETs with a standoff voltage of ±600V from S1 to S2. The TPSI2260-Q1 MOSFET avalanche robustness and thermally conscious package design allow it to robustly support system level dielectric withstand testing (HiPot) and DC fast charger surge currents of up to 1mA (3mA for TPSI2260T-Q1)without requiring any external components.

The TPSI2260-Q1 is an isolated solid state relay designed for high voltage automotive and industrial applications. The TPSI2260-Q1 uses TI’s high reliability reinforced capacitive isolation technology in combination with internal back-to-back MOSFETs to form a completely integrated solution requiring no secondary side power supply. The TPSI2260-Q1 improves system reliability as TI’s capacitive isolation technology does not suffer from mechanical wearout or photo degradation failure modes common in mechanical relay and photo relay components.

The primary side of the device is powered by only 5mA of input current and incorporates a fail-safe EN pin preventing any possibility of back powering the VDD supply. In most applications, the VDD pin of the device should be connected to a system supply between 4.5V to 20V and the EN pin of the device should be driven by a GPIO output with Logic high between 2.1V to 20V. In other applications, the VDD and EN pins could be driven together driven together directly from the system supply or from a GPIO output.

The secondary side consists of back-to-back MOSFETs with a standoff voltage of ±600V from S1 to S2. The TPSI2260-Q1 MOSFET avalanche robustness and thermally conscious package design allow it to robustly support system level dielectric withstand testing (HiPot) and DC fast charger surge currents of up to 1mA (3mA for TPSI2260T-Q1)without requiring any external components.

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Documentación técnica

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Tipo Título Fecha
* Data sheet TPSI2260-Q1 600V, 50mA, Automotive Reinforced Solid-State Relay With Avalanche Protection datasheet (Rev. A) PDF | HTML 03 dic 2025
Functional safety information TPSI2260-Q1, TPSI2260C-Q1, and TPSI2260T-Q1 Functional Safety FIT Rate, FMD and Pin FMA (Rev. B) PDF | HTML 26 ene 2026
Certificate TPSI2260Q1EVM EU Declaration of Conformity (DoC) 24 ene 2025

Diseño y desarrollo

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Placa de evaluación

TPSI2260Q1EVM — Módulo de evaluación TPSI2260-Q1

El TPSI2260Q1EVM es un módulo de evaluación de hardware (EVM) que contiene múltiples puntos de prueba y puentes para evaluar completamente el rendimiento y la funcionalidad del dispositivo. El módulo de evaluación contiene todo lo necesario para probar y evaluar el TPSI2260-Q1 antes de diseñarlo (...)

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Pedidos y calidad

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  • Marcado del dispositivo
  • Acabado de plomo/material de la bola
  • Clasificación de nivel de sensibilidad a la humedad (MSL) / reflujo máximo
  • Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
  • Contenido del material
  • Resumen de calificaciones
  • Monitoreo continuo de confiabilidad
Información incluida:
  • Lugar de fabricación
  • Lugar de ensamblaje

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