홈 전원 관리 게이트 드라이버 절연 게이트 드라이버
홈
전원 관리
게이트 드라이버
절연 게이트 드라이버

ISO5452

활성

분할 출력, STO 및 보호 기능을 지원하는 5.7kVrms, 2.5A/5A 단일 채널 절연 게이트 드라이버

지금 주문
데이터 시트

ISO5452

활성
데이터 시트 지금 주문

제품 상세 정보

Number of channels 1 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 1420 Transient isolation voltage (VIOTM) (VPK) 8000 Power switch IGBT, MOSFET Peak output current (A) 5 Features Active miller clamp, Fault reporting, Power good, Short circuit protection, Soft turn-off, Split output Output VCC/VDD (max) (V) 30 Output VCC/VDD (min) (V) 15 Input supply voltage (min) (V) 2.25 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.076 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Catalog Bootstrap supply voltage (max) (V) 1420 Rise time (ns) 18 Fall time (ns) 20 Undervoltage lockout (typ) (V) 12
Number of channels 1 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 1420 Transient isolation voltage (VIOTM) (VPK) 8000 Power switch IGBT, MOSFET Peak output current (A) 5 Features Active miller clamp, Fault reporting, Power good, Short circuit protection, Soft turn-off, Split output Output VCC/VDD (max) (V) 30 Output VCC/VDD (min) (V) 15 Input supply voltage (min) (V) 2.25 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.076 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Catalog Bootstrap supply voltage (max) (V) 1420 Rise time (ns) 18 Fall time (ns) 20 Undervoltage lockout (typ) (V) 12
SOIC (DW) 16 106.09 mm² 10.3 x 10.3
  • 50-kV/µs Minimum and 100-kV/µs Typical Common-Mode Transient Immunity (CMTI) at V CM = 1500 V
  • Split Outputs to provide 2.5-A Peak Source and 5-A Peak Sink Currents
  • Short Propagation Delay: 76 ns (Typ), 110 ns (Max)
  • 2-A Active Miller Clamp
  • Output Short-Circuit Clamp
  • Soft Turn-Off (STO) during Short Circuit
  • Fault Alarm upon Desaturation Detection is Signaled on FLT and Reset Through RST
  • Input and Output Undervoltage Lockout (UVLO) With Ready (RDY) Pin Indication
  • Active Output Pulldown and Default Low Outputs With Low Supply or Floating Inputs
  • 2.25-V to 5.5-V Input Supply Voltage
  • 15-V to 30-V Output Driver Supply Voltage
  • CMOS Compatible Inputs
  • Rejects Input Pulses and Noise Transients Shorter Than 20 ns
  • Operating Temperature: –40°C to +125°C Ambient
  • Isolation Surge Withstand Voltage 10000-V PK
  • Safety-Related Certifications:
    • 8000-V PK V IOTM and 1420-V PK V IORM Reinforced Isolation per DIN V VDE V 0884-10 (VDE V 0884-10):2006-12
    • 5700-V RMS Isolation for 1 Minute per UL 1577
    • CSA Component Acceptance Notice 5A, IEC 60950–1 and IEC 60601–1 End Equipment Standards
    • TUV Certification per EN 61010-1 and EN 60950-1
    • GB4943.1-2011 CQC Certification
  • 50-kV/µs Minimum and 100-kV/µs Typical Common-Mode Transient Immunity (CMTI) at V CM = 1500 V
  • Split Outputs to provide 2.5-A Peak Source and 5-A Peak Sink Currents
  • Short Propagation Delay: 76 ns (Typ), 110 ns (Max)
  • 2-A Active Miller Clamp
  • Output Short-Circuit Clamp
  • Soft Turn-Off (STO) during Short Circuit
  • Fault Alarm upon Desaturation Detection is Signaled on FLT and Reset Through RST
  • Input and Output Undervoltage Lockout (UVLO) With Ready (RDY) Pin Indication
  • Active Output Pulldown and Default Low Outputs With Low Supply or Floating Inputs
  • 2.25-V to 5.5-V Input Supply Voltage
  • 15-V to 30-V Output Driver Supply Voltage
  • CMOS Compatible Inputs
  • Rejects Input Pulses and Noise Transients Shorter Than 20 ns
  • Operating Temperature: –40°C to +125°C Ambient
  • Isolation Surge Withstand Voltage 10000-V PK
  • Safety-Related Certifications:
    • 8000-V PK V IOTM and 1420-V PK V IORM Reinforced Isolation per DIN V VDE V 0884-10 (VDE V 0884-10):2006-12
    • 5700-V RMS Isolation for 1 Minute per UL 1577
    • CSA Component Acceptance Notice 5A, IEC 60950–1 and IEC 60601–1 End Equipment Standards
    • TUV Certification per EN 61010-1 and EN 60950-1
    • GB4943.1-2011 CQC Certification

The ISO5452 is a 5.7-kV RMS, reinforced isolated gate driver for IGBTs and MOSFETs with split outputs, OUTH and OUTL, providing 2.5-A source and 5-A sink current. The input side operates from a single 2.25-V to 5.5-V supply. The output side allows for a supply range from minimum 15 V to maximum 30 V. Two complementary CMOS inputs control the output state of the gate driver. The short propagation time of 76 ns assures accurate control of the output stage.

An internal desaturation (DESAT) fault detection recognizes when the IGBT is in an overcurrent condition. Upon a DESAT detect, a Mute logic immediately blocks the output of the isolator and initiates a soft-turn-off procedure which disables OUTH, and pulls OUTL to low over a time span of 2 µs. When OUTL reaches 2 V with respect to the most negative supply potential, V EE2, the gate driver output is pulled hard to V EE2 potential, turning the IGBT immediately off.

When desaturation is active, a fault signal is sent across the isolation barrier, pulling the FLT output at the input side low and blocking the isolator input. Mute logic is activated through the soft-turn-off period. The FLT output condition is latched and can be reset only after RDY goes high, through a low-active pulse at the RST input.

When the IGBT is turned off during normal operation with bipolar output supply, the output is hard clamp to V EE2. If the output supply is unipolar, an active Miller clamp can be used, allowing Miller current to sink across a low impedance path, preventing IGBT to be dynamically turned on during high voltage transient conditions.

The readiness for the gate driver to be operated is under the control of two undervoltage-lockout circuits monitoring the input side and output side supplies. If either side has insufficient supply the RDY output goes low, otherwise this output is high.

The ISO5452 is available in a 16-pin SOIC package. Device operation is specified over a temperature range from –40°C to +125°C ambient.

The ISO5452 is a 5.7-kV RMS, reinforced isolated gate driver for IGBTs and MOSFETs with split outputs, OUTH and OUTL, providing 2.5-A source and 5-A sink current. The input side operates from a single 2.25-V to 5.5-V supply. The output side allows for a supply range from minimum 15 V to maximum 30 V. Two complementary CMOS inputs control the output state of the gate driver. The short propagation time of 76 ns assures accurate control of the output stage.

An internal desaturation (DESAT) fault detection recognizes when the IGBT is in an overcurrent condition. Upon a DESAT detect, a Mute logic immediately blocks the output of the isolator and initiates a soft-turn-off procedure which disables OUTH, and pulls OUTL to low over a time span of 2 µs. When OUTL reaches 2 V with respect to the most negative supply potential, V EE2, the gate driver output is pulled hard to V EE2 potential, turning the IGBT immediately off.

When desaturation is active, a fault signal is sent across the isolation barrier, pulling the FLT output at the input side low and blocking the isolator input. Mute logic is activated through the soft-turn-off period. The FLT output condition is latched and can be reset only after RDY goes high, through a low-active pulse at the RST input.

When the IGBT is turned off during normal operation with bipolar output supply, the output is hard clamp to V EE2. If the output supply is unipolar, an active Miller clamp can be used, allowing Miller current to sink across a low impedance path, preventing IGBT to be dynamically turned on during high voltage transient conditions.

The readiness for the gate driver to be operated is under the control of two undervoltage-lockout circuits monitoring the input side and output side supplies. If either side has insufficient supply the RDY output goes low, otherwise this output is high.

The ISO5452 is available in a 16-pin SOIC package. Device operation is specified over a temperature range from –40°C to +125°C ambient.
filter 기타 절연 게이트 드라이버 찾기
다운로드 스크립트와 함께 비디오 보기 동영상

기술 자료

star =TI에서 선정한 이 제품의 인기 문서
검색된 결과가 없습니다. 검색어를 지우고 다시 시도하십시오.
26개 모두 보기
유형 직함 날짜
* Data sheet ISO5452 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features datasheet (Rev. C) PDF | HTML 2023/05/30
Certificate VDE Certificate for Reinforced Isolation for DIN EN IEC 60747-17 (Rev. U) 2025/01/08
Application brief Does My Design Need a Miller Clamp? PDF | HTML 2024/12/11
Application note Choosing Appropriate Protection Approach for IGBT and SiC Power Modules PDF | HTML 2024/07/19
Certificate ISO5x5x CQC Certificate of Product Certification 2023/11/07
Application note Digital Isolator Design Guide (Rev. G) PDF | HTML 2023/09/13
User guide UCC217xx and ISO5x5x Half-Bridge EVM User's Guide for Wolfspeed 1200-V SiC 2023/09/01
White paper Circuit Board Insulation Design According to IEC60664 for Motor Drive Apps PDF | HTML 2023/08/31
Certificate ISO5451 CQC Certificate of Product Certification 2023/08/16
Certificate TUV Certificate for Isolation Devices (Rev. K) 2022/08/05
Certificate UL Certificate of Compliance File E181974 Vol 4 Sec 6 (Rev. P) 2022/08/05
Application brief The Use and Benefits of Ferrite Beads in Gate Drive Circuits PDF | HTML 2021/12/16
Certificate CSA Certification (Rev. Q) 2021/06/14
Application brief External Gate Resistor Selection Guide (Rev. A) 2020/02/28
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 2020/02/28
E-book E-book: An engineer’s guide to industrial robot designs 2020/02/12
Functional safety information Isolation in AC Motor Drives: Understanding the IEC 61800-5-1 Safety Standard (Rev. A) 2019/09/19
Analog Design Journal Pushing the envelope with high-performance digital-isolation technology (Rev. A) 2018/08/22
Functional safety information Isolation in solar power converters: Understanding the IEC62109-1 safety standar (Rev. A) 2018/05/18
Technical article Why capacitive isolation: a vital building block for sensors in smart cities PDF | HTML 2018/01/16
Analog Design Journal 4Q 2015 Analog Applications Journal 2015/10/30
Analog Design Journal Pushing the envelope with high-performance digital-isolation technology 2015/10/30
EVM User's guide ISO5852S Evaluation Module User's Guide (Rev. A) 2015/09/08
White paper Understanding electromagnetic compliance tests in digital isolators 2014/10/17
White paper High-voltage reinforced isolation: Definitions and test methodologies 2014/10/16
Application note Shelf-Life Evaluation of Lead-Free Component Finishes 2004/05/24

설계 및 개발

추가 조건 또는 필수 리소스는 사용 가능한 경우 아래 제목을 클릭하여 세부 정보 페이지를 확인하세요.

평가 보드

ISO5852SEVM — 강화 절연 IGBT 게이트 드라이버 평가 모듈

This evaluation module, featuring ISO5852S reinforced isolated gate driver device, allows designers to evaluate device AC and DC performance with a pre-populated 1-nF load or with a user-installed IGBT in either of the standard TO-247 or TO-220 packages.

사용 설명서: PDF
TI.com에서 구매 불가
시뮬레이션 모델

ISO5452 Unencrypted PSPICE Transient Model (Rev. A)

SLLM445A.ZIP (231 KB) - PSpice Model
다운로드
시뮬레이션 모델

ISO5852S IBIS Model

SLLM283.ZIP (33 KB) - IBIS Model
다운로드
시뮬레이션 툴

PSPICE-FOR-TI — TI 설계 및 시뮬레이션 툴용 PSpice®

TI용 PSpice®는 아날로그 회로의 기능을 평가하는 데 사용되는 설계 및 시뮬레이션 환경입니다. 완전한 기능을 갖춘 이 설계 및 시뮬레이션 제품군은 Cadence®의 아날로그 분석 엔진을 사용합니다. 무료로 제공되는 TI용 PSpice에는 아날로그 및 전력 포트폴리오뿐 아니라 아날로그 행동 모델에 이르기까지 업계에서 가장 방대한 모델 라이브러리 중 하나가 포함되어 있습니다.

TI 설계 및 시뮬레이션 환경용 PSpice는 기본 제공 라이브러리를 이용해 복잡한 혼합 신호 설계를 시뮬레이션할 수 있습니다. 레이아웃 및 제작에 (...)
요청
레퍼런스 디자인

TIDA-00195 — 3상 인버터 시스템용 절연 IGBT 게이트 드라이버 평가 플랫폼 레퍼런스 디자인

The TIDA-00195 reference design consists of a 22kW power stage with TI’s new reinforced isolated IGBT gate driver ISO5852S intended for motor control in various applications. This design allows performance evaluation of the ISO5852S in 3-phase inverter incorporating 1200V rated IGBT modules (...)
Design guide: PDF
회로도: PDF
레퍼런스 디자인

TIDA-01599 — AC 인버터 및 서보 드라이브를 위한 중복 듀얼 채널 STO(Safe Torque Off) 레퍼런스 설계

이 레퍼런스 설계는 CMOS 입력 절연 IGBT 게이트 드라이버를 지원하는 3상 인버터용 STO(Safe Torque Off) 서브시스템을 설명합니다. STO 하위 시스템은 하드웨어 내결함성이 1(HFT=1)인 이중 채널 아키텍처(1oo2)를 사용합니다. 이 기능은 트립 개념의 에너지를 차단한 후에 구현됩니다. 듀얼 STO 입력(STO_1 및 STO_2)이 LOW로 전환되면 6개의 절연 IGBT 게이트 드라이버의 1차 및 2차측 해당 전원 공급 장치가 부하 스위치를 통해 차단됩니다. 이렇게 하면 모터를 제어하고 에너지를 충전할 (...)
Design guide: PDF
회로도: PDF
패키지 핀 CAD 기호, 풋프린트 및 3D 모델
SOIC (DW) 16 Ultra Librarian
TI의 평가 항목에 대한 표준 약관이 적용됩니다.

주문 및 품질

포함된 정보:
  • RoHS
  • REACH
  • 디바이스 마킹
  • 납 마감/볼 재질
  • MSL 등급/피크 리플로우
  • MTBF/FIT 예측
  • 물질 성분
  • 인증 요약
  • 지속적인 신뢰성 모니터링
포함된 정보:
  • 팹 위치
  • 조립 위치

권장 제품에는 본 TI 제품과 관련된 매개 변수, 평가 모듈 또는 레퍼런스 디자인이 있을 수 있습니다.

지원 및 교육

TI 엔지니어의 기술 지원을 받을 수 있는 TI E2E™ 포럼

포럼 주제 모두 보기(영문)

콘텐츠는 TI 및 커뮤니티 기고자에 의해 "있는 그대로" 제공되며 TI의 사양으로 간주되지 않습니다. 사용 약관을 참조하십시오.

품질, 패키징, TI에서 주문하는 데 대한 질문이 있다면 TI 지원을 방문하세요. ​​​​​​​​​​​​​​

동영상