제품 상세 정보

Number of channels 2 Rating Automotive Forward/reverse channels 2 forward / 0 reverse Integrated isolated power No Isolation rating Functional Default output High, Low Data rate (max) (Mbps) 50 Protocols GPIO, PWM Working isolation voltage (VIOWM) (Vrms) 450 CMTI (min) (V/µs) 100000 Operating temperature range (°C) -40 to 125 Supply voltage (max) (V) 5.5 Supply voltage (min) (V) 1.71 Propagation delay time (typ) (µs) 0.011 Creepage (min) (mm) 2.2 Clearance (min) (mm) 2.2
Number of channels 2 Rating Automotive Forward/reverse channels 2 forward / 0 reverse Integrated isolated power No Isolation rating Functional Default output High, Low Data rate (max) (Mbps) 50 Protocols GPIO, PWM Working isolation voltage (VIOWM) (Vrms) 450 CMTI (min) (V/µs) 100000 Operating temperature range (°C) -40 to 125 Supply voltage (max) (V) 5.5 Supply voltage (min) (V) 1.71 Propagation delay time (typ) (µs) 0.011 Creepage (min) (mm) 2.2 Clearance (min) (mm) 2.2
SOIC (D) 8 29.4 mm² 4.9 x 6
  • Dual channel, CMOS output functional isolators
  • 50Mbps data rate
  • AEC-Q100 qualified with the following results:
    • Device temperature Grade 1: –40°C to +125°C ambient operating temperature range
  • Robust SiO2 isolation barrier with ±150kV/µs typical CMTI
  • Functional Isolation (8-D):
    • 450VRMS, 637VDC working voltage
    • 707VRMS, 1000VDC transient voltage (60s)
  • Wide supply range: 1.71V to 1.89V and 2.25V to 5.5V
  • 1.71V to 5.5V level translation
  • Default output High (ISO652x-Q1) and Low (ISO652xF-Q1) Options
  • 1.8mA per channel typical at 1Mbps at 3.3V
  • Low propagation delay: 11ns typical at 3.3V
  • Robust electromagnetic compatibility (EMC)
    • System-Level ESD, EFT, and surge immunity
    • Ultra-low emissions
  • Narrow-SOIC (8-D) package options
  • Dual channel, CMOS output functional isolators
  • 50Mbps data rate
  • AEC-Q100 qualified with the following results:
    • Device temperature Grade 1: –40°C to +125°C ambient operating temperature range
  • Robust SiO2 isolation barrier with ±150kV/µs typical CMTI
  • Functional Isolation (8-D):
    • 450VRMS, 637VDC working voltage
    • 707VRMS, 1000VDC transient voltage (60s)
  • Wide supply range: 1.71V to 1.89V and 2.25V to 5.5V
  • 1.71V to 5.5V level translation
  • Default output High (ISO652x-Q1) and Low (ISO652xF-Q1) Options
  • 1.8mA per channel typical at 1Mbps at 3.3V
  • Low propagation delay: 11ns typical at 3.3V
  • Robust electromagnetic compatibility (EMC)
    • System-Level ESD, EFT, and surge immunity
    • Ultra-low emissions
  • Narrow-SOIC (8-D) package options

The ISO652x-Q1 devices are high-performance, dual-channel functional isolators designed for cost sensitive, space constrained applications that require isolation for non-safety applications. The isolation barrier supports a working voltage of 450VRMS and transient over voltages of 1000VDC.

The ISO652x-Q1 devices provide high electromagnetic immunity and low emissions at low power consumption, while isolating CMOS or LVCMOS digital I/Os. Each isolation channel has a logic input and output buffer separated by TI’s double capacitive silicon dioxide (SiO2) insulation barrier. ISO6520-Q1 has two isolation channels with both channels in the same direction. ISO6521-Q1 has two isolation channels with one channel in each direction. In the event of input power or signal loss, the default output is high for devices without suffix F and low for devices with suffix F. See Device Functional Modes section for further details.

These devices help prevent ground loops and noise currents between mixed voltage domain systems on data buses, such as CAN and LIN, from causing data corruption. Through chip design and layout techniques, the electromagnetic compatibility of the ISO652x-Q1 devices have been significantly enhanced to ease system-level ESD and emissions compliance.

The ISO652x-Q1 devices are high-performance, dual-channel functional isolators designed for cost sensitive, space constrained applications that require isolation for non-safety applications. The isolation barrier supports a working voltage of 450VRMS and transient over voltages of 1000VDC.

The ISO652x-Q1 devices provide high electromagnetic immunity and low emissions at low power consumption, while isolating CMOS or LVCMOS digital I/Os. Each isolation channel has a logic input and output buffer separated by TI’s double capacitive silicon dioxide (SiO2) insulation barrier. ISO6520-Q1 has two isolation channels with both channels in the same direction. ISO6521-Q1 has two isolation channels with one channel in each direction. In the event of input power or signal loss, the default output is high for devices without suffix F and low for devices with suffix F. See Device Functional Modes section for further details.

These devices help prevent ground loops and noise currents between mixed voltage domain systems on data buses, such as CAN and LIN, from causing data corruption. Through chip design and layout techniques, the electromagnetic compatibility of the ISO652x-Q1 devices have been significantly enhanced to ease system-level ESD and emissions compliance.

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기술 자료

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2개 모두 보기
유형 직함 날짜
* Data sheet ISO652x-Q1 General Purpose Dual-Channel Automotive Functional Isolators datasheet (Rev. A) PDF | HTML 2025/02/24
White paper Shrinking Solution Size and Cost With Functional Isolation PDF | HTML 2024/08/22

설계 및 개발

추가 조건 또는 필수 리소스는 사용 가능한 경우 아래 제목을 클릭하여 세부 정보 페이지를 확인하세요.

평가 보드

ISO6521REUEVM — 디지털 신호용 듀얼 채널 기능 아이솔레이터용 ISO6521 평가 모듈

ISO6521REUEVM은 8핀 DFN 패키지의 듀얼 채널 ISO6521 기능 아이솔레이터를 평가하는 데 사용되는 평가 모듈(EVM)입니다. EVM에는 다양한 일반 애플리케이션을 테스트하기 위해 구성 요소를 추가할 수 있는 유연성을 제공하는 추가 풋프린트가 있습니다. 또한 EVM은 최소한의 외부 부품으로 장치를 평가할 수 있도록 여러 테스트 포인트를 제공합니다.

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주문 및 품질

포함된 정보:
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  • 디바이스 마킹
  • 납 마감/볼 재질
  • MSL 등급/피크 리플로우
  • MTBF/FIT 예측
  • 물질 성분
  • 인증 요약
  • 지속적인 신뢰성 모니터링
포함된 정보:
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  • 조립 위치

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