TLC082-Q1

활성

오토모티브 등급, 듀얼, 16V, 10MHz 연산 증폭기

이 제품의 최신 버전이 있습니다

open-in-new 대안 비교
다른 핀 출력을 지원하지만 비교 대상 장치와 동일한 기능.
TLV9162-Q1 활성 오토모티브, 듀얼, 16V 11MHz 레일 투 레일 입력 및 출력 저잡음 연산 증폭기 Rail-to-rail I/O, higher GBW (11 MHz), faster slew rate (33 V/us), lower offset voltage (1 mV), lower noise (6.8 nV/√Hz)

제품 상세 정보

Number of channels 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 4.5 Rail-to-rail In to V- GBW (typ) (MHz) 10 Slew rate (typ) (V/µs) 16 Vos (offset voltage at 25°C) (max) (mV) 1.9 Iq per channel (typ) (mA) 1.8 Vn at 1 kHz (typ) (nV√Hz) 8.5 Rating Automotive Operating temperature range (°C) -40 to 125 Offset drift (typ) (µV/°C) 1.2 Input bias current (max) (pA) 50 CMRR (typ) (dB) 110 Iout (typ) (A) 0.1 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) 0 Input common mode headroom (to positive supply) (typ) (V) -1.5 Output swing headroom (to negative supply) (typ) (V) 0.18 Output swing headroom (to positive supply) (typ) (V) -0.7
Number of channels 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 4.5 Rail-to-rail In to V- GBW (typ) (MHz) 10 Slew rate (typ) (V/µs) 16 Vos (offset voltage at 25°C) (max) (mV) 1.9 Iq per channel (typ) (mA) 1.8 Vn at 1 kHz (typ) (nV√Hz) 8.5 Rating Automotive Operating temperature range (°C) -40 to 125 Offset drift (typ) (µV/°C) 1.2 Input bias current (max) (pA) 50 CMRR (typ) (dB) 110 Iout (typ) (A) 0.1 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) 0 Input common mode headroom (to positive supply) (typ) (V) -1.5 Output swing headroom (to negative supply) (typ) (V) 0.18 Output swing headroom (to positive supply) (typ) (V) -0.7
HVSSOP (DGN) 8 14.7 mm² (3 mm × 4.9 mm)
  • Wide Bandwidth: 10 MHz
  • High-Output Drive
    • IOH: 57 mA at VDD –1.5 V
    • IOL: 55 mA at 0.5 V
  • High Slew Rate
    • SR+: 16 V/μs
    • SR−: 19 V/μs
  • Wide Supply Range: 4.5 V to 16 V
  • Supply Current: 1.9 mA per Channel
  • Low Input Noise Voltage: 8.5 nV√Hz
  • Input Offset Voltage: 60 μV
  • Ultra-Small 8-Pin MSOP-PowerPAD Package for TLC082-Q1

All trademarks are the property of their respective owners.

  • Wide Bandwidth: 10 MHz
  • High-Output Drive
    • IOH: 57 mA at VDD –1.5 V
    • IOL: 55 mA at 0.5 V
  • High Slew Rate
    • SR+: 16 V/μs
    • SR−: 19 V/μs
  • Wide Supply Range: 4.5 V to 16 V
  • Supply Current: 1.9 mA per Channel
  • Low Input Noise Voltage: 8.5 nV√Hz
  • Input Offset Voltage: 60 μV
  • Ultra-Small 8-Pin MSOP-PowerPAD Package for TLC082-Q1

All trademarks are the property of their respective owners.

The TLC08x-Q1 is the first general purpose operational amplifier to highlight TI's BiCMOS technology. The BiMOS family concept is simple: provide an upgrade path for BiFET users who are moving away from dual-supply to single-supply systems and demand higher AC and DC performance. With performance rated from 4.5 V to 16 V across an automotive temperature range (–40°C to 125°C), BiMOS suits a wide range of audio, automotive, industrial, and instrumentation applications.

Developed in TI’s patented LBC3 BiCMOS process, the BiMOS amplifiers combine a very high input impedance, low-noise CMOS front end with a high-drive bipolar output stage, thus providing the optimum performance features of both. AC performance improvements over the TL08x-Q1 BiFET predecessors include a bandwidth of 10 MHz and voltage noise of 8.5 nV/√Hz. These features enable the TLC08x-Q1 devices to be suitable for ADAS (such as short-range radar) and body in automotive. The TLC082-Q1 is also suitable in infotainment and cluster as a pre amp in car audio applications.

DC improvements include an ensured VICR that includes ground, a factor of four reduction in input offset voltage down to 1.5 mV (maximum), and a power-supply rejection improvement of greater than 40 dB to 130 dB. Added to this list of impressive features is the ability to drive ±50-mA loads comfortably from an ultrasmall-footprint MSOP PowerPAD package, which positions the TLC08x-Q1 as the ideal high-performance, general-purpose operational amplifier family.

For all available packages, see the orderable addendum at the end of the data sheet.

The TLC08x-Q1 is the first general purpose operational amplifier to highlight TI's BiCMOS technology. The BiMOS family concept is simple: provide an upgrade path for BiFET users who are moving away from dual-supply to single-supply systems and demand higher AC and DC performance. With performance rated from 4.5 V to 16 V across an automotive temperature range (–40°C to 125°C), BiMOS suits a wide range of audio, automotive, industrial, and instrumentation applications.

Developed in TI’s patented LBC3 BiCMOS process, the BiMOS amplifiers combine a very high input impedance, low-noise CMOS front end with a high-drive bipolar output stage, thus providing the optimum performance features of both. AC performance improvements over the TL08x-Q1 BiFET predecessors include a bandwidth of 10 MHz and voltage noise of 8.5 nV/√Hz. These features enable the TLC08x-Q1 devices to be suitable for ADAS (such as short-range radar) and body in automotive. The TLC082-Q1 is also suitable in infotainment and cluster as a pre amp in car audio applications.

DC improvements include an ensured VICR that includes ground, a factor of four reduction in input offset voltage down to 1.5 mV (maximum), and a power-supply rejection improvement of greater than 40 dB to 130 dB. Added to this list of impressive features is the ability to drive ±50-mA loads comfortably from an ultrasmall-footprint MSOP PowerPAD package, which positions the TLC08x-Q1 as the ideal high-performance, general-purpose operational amplifier family.

For all available packages, see the orderable addendum at the end of the data sheet.

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상위 문서 유형 직함 형식 옵션 최신 영어 버전 다운로드 날짜
* 데이터 시트 TLC08x-Q1 Wide-Bandwidth High-Output-Drive Single-Supply Operational Amplifiers datasheet (Rev. E) PDF | HTML 2016. 10. 12
e북 The Signal e-book: A compendium of blog posts on op amp design topics PDF | HTML 2017. 3. 28
애플리케이션 노트 TLC08x and TLC08xA EMI Immunity Performance 2013. 8. 19

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