UCC27712

활성

인터로크 포함 1.8A/2.8A, 620V 하프 브리지 드라이버

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데이터 시트

document-pdfAcrobat UCC27712 620-V, 1.8-A, 2.8-A High-Side Low-Side Gate Driver with Interlock datasheet (Rev. B) (영어) PDF | HTML

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대안 비교

다른 핀 출력을 지원하지만 비교 대상 장치와 동일한 기능.

신규 UCC27734

활성

8V UVLO 및 인터로크를 지원하는 700V 4A 하프 브리지 게이트 드라이버 same functionality

UCC27712

활성

데이터 시트

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제품 상세 정보

Bootstrap supply voltage (max) (V)

700

Power switch

IGBT, MOSFET

Input supply voltage (min) (V)

10

Input supply voltage (max) (V)

20

Peak output current (A)

2.8

Operating temperature range (°C)

-40 to 150

Undervoltage lockout (typ) (V)

10

Rating

Catalog

Propagation delay time (µs)

0.1

Rise time (ns)

16

Fall time (ns)

10

Iq (mA)

0.25

Input threshold

CMOS, TTL

Channel input logic

Noninverting

Switch node voltage (V)

-11

Features

Dead time control, Interlock

Driver configuration

CMOS compatible, Dual, Noninverting, TTL compatible

Bootstrap supply voltage (max) (V)

700

Power switch

IGBT, MOSFET

Input supply voltage (min) (V)

10

Input supply voltage (max) (V)

20

Peak output current (A)

2.8

Operating temperature range (°C)

-40 to 150

Undervoltage lockout (typ) (V)

10

Rating

Catalog

Propagation delay time (µs)

0.1

Rise time (ns)

16

Fall time (ns)

10

Iq (mA)

0.25

Input threshold

CMOS, TTL

Channel input logic

Noninverting

Switch node voltage (V)

-11

Features

Dead time control, Interlock

Driver configuration

CMOS compatible, Dual, Noninverting, TTL compatible

SOIC (D)

8

29.4 mm² (4.9 mm × 6 mm)

High-side and low-side configuration
Dual inputs with output interlock and 150-ns deadtime
Fully operational up to 620-V, 700-V absolute maximum on HB pin
10-V to 20-V VDD recommended range
Peak output current 2.8-A sink, 1.8-A source
dv/dt immunity of 50 V/ns
Logic operational up to –11 V on HS pin
Negative voltage tolerance on inputs of –5 V
Large negative transient safe operating area
UVLO protection for both channels
Small propagation delay (100-ns typical)
Delay matching (12-ns typical)
Floating channel designed for bootstrap operation
Low quiescent current
TTL and CMOS compatible inputs
Industry standard SOIC-8 package
All parameters specified over temperature range, –40 °C to +125 °C

High-side and low-side configuration
Dual inputs with output interlock and 150-ns deadtime
Fully operational up to 620-V, 700-V absolute maximum on HB pin
10-V to 20-V VDD recommended range
Peak output current 2.8-A sink, 1.8-A source
dv/dt immunity of 50 V/ns
Logic operational up to –11 V on HS pin
Negative voltage tolerance on inputs of –5 V
Large negative transient safe operating area
UVLO protection for both channels
Small propagation delay (100-ns typical)
Delay matching (12-ns typical)
Floating channel designed for bootstrap operation
Low quiescent current
TTL and CMOS compatible inputs
Industry standard SOIC-8 package
All parameters specified over temperature range, –40 °C to +125 °C

The UCC27712 is a 620-V high-side and low-side gate driver with 1.8-A source, 2.8-A sink current, targeted to drive power MOSFETs or IGBTs.

The recommended VDD operating voltage is 10-V to 20-V for IGBT’s and 10-V to 17-V for power MOSFETs.

The UCC27712 includes protection features where the outputs are held low when the inputs are left open or when the minimum input pulse width specification is not met. Interlock and deadtime functions prevent both outputs from being turned on simultaneously. In addition, the device accepts a wide range bias supply range and offers UVLO protection for both the VDD and HB bias supply.

Developed with TI’s state of the art high-voltage device technology, the device features robust drive with excellent noise and transient immunity including large negative voltage tolerance on its inputs, high dV/dt tolerance, wide negative transient safe operating area (NTSOA) on the switch node (HS), and interlock.

The device consists of one ground-referenced channel (LO) and one floating channel (HO) which is designed for operating with bootstrap or isolated power supplies. The device features fast propagation delays and excellent delay matching between both channels. On the UCC27712, each channel is controlled by its respective input pins, HI and LI.

The UCC27712 is a 620-V high-side and low-side gate driver with 1.8-A source, 2.8-A sink current, targeted to drive power MOSFETs or IGBTs.

The recommended VDD operating voltage is 10-V to 20-V for IGBT’s and 10-V to 17-V for power MOSFETs.

The UCC27712 includes protection features where the outputs are held low when the inputs are left open or when the minimum input pulse width specification is not met. Interlock and deadtime functions prevent both outputs from being turned on simultaneously. In addition, the device accepts a wide range bias supply range and offers UVLO protection for both the VDD and HB bias supply.

Developed with TI’s state of the art high-voltage device technology, the device features robust drive with excellent noise and transient immunity including large negative voltage tolerance on its inputs, high dV/dt tolerance, wide negative transient safe operating area (NTSOA) on the switch node (HS), and interlock.

The device consists of one ground-referenced channel (LO) and one floating channel (HO) which is designed for operating with bootstrap or isolated power supplies. The device features fast propagation delays and excellent delay matching between both channels. On the UCC27712, each channel is controlled by its respective input pins, HI and LI.

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기술 자료

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15개 모두 보기

상위 문서	유형	직함	형식 옵션	날짜
*	데이터 시트	UCC27712 620-V, 1.8-A, 2.8-A High-Side Low-Side Gate Driver with Interlock datasheet (Rev. B)	PDF \| HTML	2020. 3. 5
	애플리케이션 노트	Selecting Gate Drivers for HVAC Systems (Rev. A)	PDF \| HTML	2025. 11. 7
	애플리케이션 노트	Using Half-Bridge Gate Driver to Achieve 100% Duty Cycle for High Side FET	PDF \| HTML	2024. 3. 25
	애플리케이션 노트	Review of Different Power Factor Correction (PFC) Topologies' Gate Driver Needs	PDF \| HTML	2024. 1. 22
	기술 문서	Selecting the right level of integration to meet motor design requirements	PDF \| HTML	2024. 1. 4
	애플리케이션 노트	Bootstrap Circuitry Selection for Half Bridge Configurations (Rev. A)	PDF \| HTML	2023. 9. 8
	애플리케이션 노트	Comparative Analysis of Two Different Methods for Gate-Drive Current Boosting (Rev. A)	PDF \| HTML	2022. 2. 17
	애플리케이션 노트	Voltage Fed Full Bridge DC-DC & DC-AC Converter High-Freq Inverter Using C2000 (Rev. D)		2021. 4. 7
	애플리케이션 노트	Implementing High-Side Switches Using Half-Bridge Gate Drivers for 48-V Battery.		2020. 5. 12
	Application brief	External Gate Resistor Selection Guide (Rev. A)		2020. 2. 28
	Application brief	Understanding Peak IOH and IOL Currents (Rev. A)		2020. 2. 28
	추가 자료	Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A)		2018. 10. 29
	기술 문서	How to achieve higher system robustness in DC drives, part 3: minimum input pulse	PDF \| HTML	2018. 9. 19
	기술 문서	How to achieve higher system robustness in DC drives, part 2: interlock and deadti	PDF \| HTML	2018. 5. 30
	기술 문서	How to achieve higher system robustness in DC drives, part 1: negative voltage	PDF \| HTML	2018. 4. 17

설계 및 개발

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평가 보드

UCC27712EVM-287 — UCC27712 인터로크 포함 620V, 1.8A, 2.8A 고압측 저압측 게이트 드라이버 평가 모듈

UCC27712EVM-287은 높은 소스 및 싱크 피크 전류 기능을 지원하는 620V 하프 브리지 게이트 드라이버인 UCC27712D를 평가하기 위해 설계되었습니다. 이 EVM은 데이터 시트를 기준으로 드라이버 IC를 평가하는 데 사용할 수 있습니다. EVM은 드라이버 IC 구성 요소 선택 가이드로 사용할 수도 있습니다. EVM은 동기 벅 컨버터와 같은 전력계 토폴로지로 손쉽게 구성할 수 있으며 레이아웃 효과는 테스트할 수 있습니다.

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