DRV8762-Q1
- AEC-Q100 Test Guidance for automotive applications
- Device ambient temperature: –40°C to +125°C
- H-bridge gate driver
- Drives four N-channel MOSFETs (NMOS)
- 8 to 85V wide operating voltage range
- Bootstrap architecture for high-side gate driver
- Supports 50mA average gate switching current enables driving 400nC MOSFETs at 20kHz
- Trickle charge pump to support 100% PWM duty cycle and to generate overdrive supply to drive external cut-off or reverse polarity protection circuit
- Smart Gate Drive architecture
- 8-level configurable peak gate drive current up to 224 / 448mA (source / sink)
- Closed-loop automatic deadtime insertion based on gate-source voltage monitoring
- Configurable soft shutdown to minimize inductive voltage spikes during overcurrent shutdown
- Low-side Current Sense Amplifier
- 1mV low input offset across temperature
- 4-level adjustable gain
- Adjustable output bias to support unidirectional or bidirectional sensing
- SPI-based detailed configuration and diagnostics
- DRVOFF pin to disable driver independently
- High voltage wake up pin (nSLEEP)
- Dedicated ASCIN pin to control motor braking (active short circuit)
- 4x and 2x PWM Modes
- Supports 3.3V and 5V Logic Inputs
- Protection features
- Battery and power supply voltage monitors
- MOSFET VDS and Rsense over current monitors
- MOSFET VGS gate fault monitors
- Device thermal warning and shutdown
- Fault condition indicator pin
The DRV8762-Q1 is an integrated smart gate driver for 48V automotive H-bridge applications. The device provides two half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV8762-Q1 generates the correct gate drive voltages using an external 12V supply and an integrated bootstrap diode for the high-side MOSFETs. The Smart Gate Drive architecture supports configurable peak gate drive current from 16mA up to 224mA source and 448mA sink. The DRV8762-Q1 can operate with a wide input range from 8V to 85V at the motor connection. A trickle charge pump allows for the gate drivers to support 100% PWM duty cycle control and provides overdrive gate drive voltage of external switches.
The DRV8762-Q1 provides low-side current sense amplifiers to support resistor based low-side current sensing. The low offset of the amplifiers enables the system to obtain precise motor current measurements.
A wide range of diagnostics and protection features are integrated with the DRV8762-Q1 enables a robust motor drive system design and helps eliminate the need of external components. The highly configurable device response allows the device to be integrated seamlessly into a variety of system designs.
技術文件
| 重要文件 | 類型 | 標題 | 格式選項 | 日期 |
|---|---|---|---|---|
| * | Data sheet | DRV8762-Q1 48V Battery H-Bridge Smart Gate Driver with Accurate Current Sensing and Advanced Monitoring datasheet | PDF | HTML | 2026年 5月 14日 |
| EVM User's guide | DRV8762-Q1 Evaluation Module | PDF | HTML | 2026年 4月 6日 |
設計與開發
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DRV8762-Q1EVM — DRV8762-Q1 評估模組
DRV8762-Q1 是一款整合式智慧型閘極驅動器，適用於 48V 車用 H 橋有刷直流 (BDC) 馬達應用。此裝置提供低壓側電流感測放大器，可支援以電阻器為基礎的低壓側電流感測。放大器的偏移量很低，可讓系統進行精確的馬達電流測量。
閘極驅動器支援外接 N 通道高壓側與低壓側功率 MOSFET，並具備高達 224mA 的拉電流與 448mA 的灌電流峰值能力。高壓側閘極驅動器供應電壓由自舉式電容器產生，低壓側閘極驅動器則由外部供應 12V 額定電壓。
此套件需要 C2000™ launchpad (LAUNCHXL-F280049C)，用於控制 (...)
| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| VQFN (RGZ) | 48 | Ultra Librarian |
訂購與品質
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中的可靠性監測
- 晶圓廠位置
- 組裝地點
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。