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隔離式閘極驅動器

ISO5852S-Q1

現行

具有分離輸出和主動保護功能的車用 5.7kVrms 2.5A/5A 單通道絕緣式閘極驅動器

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產品規格表

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open-in-new 比較替代產品
功能相同，但引腳輸出與所比較的裝置不同
UCC21750-Q1 現行 適用於 IGBT/SiC 且具有 DESAT 和內部鉗位的車用 5.7kVrms、±10A 單通道絕緣式閘極驅動器 Newer generation, integrated Analog-to-PWM sensor

ISO5852S-Q1

現行
產品規格表 立即訂購

產品詳細資料

Number of channels 1 Isolation rating Reinforced Power switch IGBT, MOSFET, SiCFET Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 1500 Transient isolation voltage (VIOTM) (VPK) 8000 Peak output current (A) 5 Peak output current (source) (typ) (A) 2.5 Peak output current (sink) (typ) (A) 5 Features Active miller clamp, Fault reporting, Power good, Short circuit protection, Soft turn-off, Soft turnoff, Split output Output VCC/VDD (min) (V) 15 Output VCC/VDD (max) (V) 30 Input supply voltage (min) (V) 2.25 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.076 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 18 Fall time (ns) 20 Undervoltage lockout (typ) (V) 12
Number of channels 1 Isolation rating Reinforced Power switch IGBT, MOSFET, SiCFET Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 1500 Transient isolation voltage (VIOTM) (VPK) 8000 Peak output current (A) 5 Peak output current (source) (typ) (A) 2.5 Peak output current (sink) (typ) (A) 5 Features Active miller clamp, Fault reporting, Power good, Short circuit protection, Soft turn-off, Soft turnoff, Split output Output VCC/VDD (min) (V) 15 Output VCC/VDD (max) (V) 30 Input supply voltage (min) (V) 2.25 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.076 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 18 Fall time (ns) 20 Undervoltage lockout (typ) (V) 12
SOIC (DW) 16 106.09 mm² 10.3 x 10.3
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range
    • Device HBM Classification Level 3A
    • Device CDM Classification Level C6
  • 100-kV/μs Minimum Common-Mode Transient Immunity (CMTI) at VCM = 1500 V
  • Split Outputs to Provide 2.5-A Peak Source and
    5-A Peak Sink Currents
  • Short Propagation Delay: 76 ns (Typ),
    110 ns (Max)
  • 2-A Active Miller Clamp
  • Output Short-Circuit Clamp
  • Soft Turn-Off (STO) during Short Circuit
  • Fault Alarm upon Desaturation Detection is Signaled on FLT and Reset Through RST
  • Input and Output Undervoltage Lockout (UVLO) with Ready (RDY) Pin Indication
  • Active Output Pulldown and Default Low Outputs with Low Supply or Floating Inputs
  • 2.25-V to 5.5-V Input Supply Voltage
  • 15-V to 30-V Output Driver Supply Voltage
  • CMOS Compatible Inputs
  • Rejects Input Pulses and Noise Transients Shorter Than 20 ns
  • Isolation Surge Withstand Voltage 12800-VPK
  • Safety-Related Certifications:
    • 8000-VPK VIOTM and 2121-VPK VIORM Reinforced Isolation per DIN V VDE V 0884-10 (VDE V 0884-10):2006-12
    • 5700-VRMS Isolation for 1 Minute per UL 1577
    • CSA Component Acceptance Notice 5A, IEC 60950–1 and IEC 60601–1 End Equipment Standards
    • TUV Certification per EN 61010-1 and EN 60950-1
    • GB4943.1-2011 CQC Certification
    • All Certifications Complete per UL, VDE, CQC, TUV and Planned for CSA

All trademarks are the property of their respective owners.

  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range
    • Device HBM Classification Level 3A
    • Device CDM Classification Level C6
  • 100-kV/μs Minimum Common-Mode Transient Immunity (CMTI) at VCM = 1500 V
  • Split Outputs to Provide 2.5-A Peak Source and
    5-A Peak Sink Currents
  • Short Propagation Delay: 76 ns (Typ),
    110 ns (Max)
  • 2-A Active Miller Clamp
  • Output Short-Circuit Clamp
  • Soft Turn-Off (STO) during Short Circuit
  • Fault Alarm upon Desaturation Detection is Signaled on FLT and Reset Through RST
  • Input and Output Undervoltage Lockout (UVLO) with Ready (RDY) Pin Indication
  • Active Output Pulldown and Default Low Outputs with Low Supply or Floating Inputs
  • 2.25-V to 5.5-V Input Supply Voltage
  • 15-V to 30-V Output Driver Supply Voltage
  • CMOS Compatible Inputs
  • Rejects Input Pulses and Noise Transients Shorter Than 20 ns
  • Isolation Surge Withstand Voltage 12800-VPK
  • Safety-Related Certifications:
    • 8000-VPK VIOTM and 2121-VPK VIORM Reinforced Isolation per DIN V VDE V 0884-10 (VDE V 0884-10):2006-12
    • 5700-VRMS Isolation for 1 Minute per UL 1577
    • CSA Component Acceptance Notice 5A, IEC 60950–1 and IEC 60601–1 End Equipment Standards
    • TUV Certification per EN 61010-1 and EN 60950-1
    • GB4943.1-2011 CQC Certification
    • All Certifications Complete per UL, VDE, CQC, TUV and Planned for CSA

All trademarks are the property of their respective owners.

The ISO5852S-Q1 device is a 5.7-kVRMS, reinforced isolated gate driver for IGBTs and MOSFETs with split outputs, OUTH and OUTL, providing 2.5-A source and 5-A sink current. The input side operates from a single 2.25-V to 5.5-V supply. The output side allows for a supply range from minimum 15 V to maximum 30 V. Two complementary CMOS inputs control the output state of the gate driver. The short propagation time of 76 ns provides accurate control of the output stage.

An internal desaturation (DESAT) fault detection recognizes when the IGBT is in an overcurrent condition. Upon a DESAT detect, a mute logic immediately blocks the output of the isolator and initiates a soft-turnoff procedure which disables the OUTH pin and pulls the OUTL pin to low over a time span of 2 μs. When the OUTL pin reaches 2 V with respect to the most-negative supply potential, VEE2, the gate-driver output is pulled hard to the VEE2 potential, turning the IGBT immediately off.

When desaturation is active, a fault signal is sent across the isolation barrier, pulling the FLT output at the input side low and blocking the isolator input. Mute logic is activated through the soft-turnoff period. The FLT output condition is latched and can be reset only after the RDY pin goes high, through a low-active pulse at the RST input.

When the IGBT is turned off during normal operation with a bipolar output supply, the output is hard clamp to VEE2. If the output supply is unipolar, an active Miller clamp can be used, allowing Miller current to sink across a low-impedance path which prevents the IGBT from dynamic turnon during high-voltage transient conditions.

The readiness for the gate driver to be operated is under the control of two undervoltage-lockout circuits monitoring the input-side and output-side supplies. If either side has insufficient supply, the RDY output goes low, otherwise this output is high.

The ISO5852S-Q1 device is available in a 16-pin SOIC package. Device operation is specified over a temperature range from –40°C to +125°C ambient.

For all available packages, see the orderable addendum at the end of the data sheet.

The ISO5852S-Q1 device is a 5.7-kVRMS, reinforced isolated gate driver for IGBTs and MOSFETs with split outputs, OUTH and OUTL, providing 2.5-A source and 5-A sink current. The input side operates from a single 2.25-V to 5.5-V supply. The output side allows for a supply range from minimum 15 V to maximum 30 V. Two complementary CMOS inputs control the output state of the gate driver. The short propagation time of 76 ns provides accurate control of the output stage.

An internal desaturation (DESAT) fault detection recognizes when the IGBT is in an overcurrent condition. Upon a DESAT detect, a mute logic immediately blocks the output of the isolator and initiates a soft-turnoff procedure which disables the OUTH pin and pulls the OUTL pin to low over a time span of 2 μs. When the OUTL pin reaches 2 V with respect to the most-negative supply potential, VEE2, the gate-driver output is pulled hard to the VEE2 potential, turning the IGBT immediately off.

When desaturation is active, a fault signal is sent across the isolation barrier, pulling the FLT output at the input side low and blocking the isolator input. Mute logic is activated through the soft-turnoff period. The FLT output condition is latched and can be reset only after the RDY pin goes high, through a low-active pulse at the RST input.

When the IGBT is turned off during normal operation with a bipolar output supply, the output is hard clamp to VEE2. If the output supply is unipolar, an active Miller clamp can be used, allowing Miller current to sink across a low-impedance path which prevents the IGBT from dynamic turnon during high-voltage transient conditions.

The readiness for the gate driver to be operated is under the control of two undervoltage-lockout circuits monitoring the input-side and output-side supplies. If either side has insufficient supply, the RDY output goes low, otherwise this output is high.

The ISO5852S-Q1 device is available in a 16-pin SOIC package. Device operation is specified over a temperature range from –40°C to +125°C ambient.

For all available packages, see the orderable addendum at the end of the data sheet.
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類型 標題 日期
* Data sheet ISO5852S-Q1 High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features datasheet (Rev. A) PDF | HTML 2016年 12月 22日
Certificate VDE Certificate for Reinforced Isolation for DIN EN IEC 60747-17 (Rev. Z) 2026年 1月 8日
Certificate UL Certificate of Compliance File E181974 Vol 4 Sec 6 (Rev. R) 2025年 9月 8日
Certificate TUV Certificate for Isolation Devices (Rev. L) 2025年 8月 15日
Application note Choosing Appropriate Protection Approach for IGBT and SiC Power Modules PDF | HTML 2024年 7月 19日
Certificate ISO5x5x CQC Certificate of Product Certification 2023年 11月 7日
User guide UCC217xx and ISO5x5x Half-Bridge EVM User's Guide for Wolfspeed 1200-V SiC 2023年 9月 1日
Certificate ISO5451 CQC Certificate of Product Certification 2023年 8月 16日
Application note Comparative Analysis of Two Different Methods for Gate-Drive Current Boosting (Rev. A) PDF | HTML 2022年 2月 17日
Application brief The Use and Benefits of Ferrite Beads in Gate Drive Circuits PDF | HTML 2021年 12月 16日
Certificate CSA Certification (Rev. Q) 2021年 6月 14日
Application brief External Gate Resistor Selection Guide (Rev. A) 2020年 2月 28日
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 2020年 2月 28日
Application note Isolation Glossary (Rev. A) 2017年 9月 19日

設計與開發

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開發板

ISO5852SEVM — 強化型隔離式 IGBT 閘極驅動器評估模組

This evaluation module, featuring ISO5852S reinforced isolated gate driver device, allows designers to evaluate device AC and DC performance with a pre-populated 1-nF load or with a user-installed IGBT in either of the standard TO-247 or TO-220 packages.

使用指南: PDF
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模擬型號

ISO5852S Unencrypted PSPICE Transient Model

SLLM446.ZIP (4 KB) - PSpice Model
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模擬工具

PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具

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參考設計

TIDA-020014 — 具有 3 種 IGBT/SiC 偏壓電壓解決方案的 HEV/EV 牽引逆變器功率級參考設計

此參考設計展示了牽引逆變器的單相功率級，具備三個 12V 汽車電池輸入，並提供適用於混合動力電動車和電動車 (HEV/EV) 系統的 4.2W 偏壓電源解決方案。所有偏壓電源解決方案均可接受來自 12V 汽車電池的 4.5V 至 42V DC 廣泛輸入範圍，並可配置輸出 +15V / –8V 或 +20V / –4V，最大輸出電流可達 180mA。功率級包含具 5.7kVRMS 強化隔離的隔離式閘極驅動器，設計採用 100mm × 62mm 外型尺寸，適用於 SiC/IGBT 半橋模組。其中包含隔離式 DC (...)
Design guide: PDF
電路圖: PDF
參考設計

TIDA-00794 — 適用於 HEV/EV 牽引逆變器的 IGBT 模組過熱保護參考設計

TIDA-00794 參考設計是一款溫度感測解決方案，可在 HEV/EV 牽引逆變器系統中提供 IGBT 過熱保護。此解決方案會透過整合至 IGBT 模組中的 NTC 熱敏電阻監控 IGBT 溫度。當 NTC 熱敏電阻溫度上升超過設定的閾值時，也會為 IGBT 閘極驅動器提供熱關機。此設計包括 IGBT 隔離式閘極驅動器、高電壓隔離、NTC 訊號調整、負載電阻器，以及 MSP430 的 I2C 介面，讓設計系統能在高功率額定值下獨立運作。
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電路圖: PDF
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