Radiation Performance
- Total Ionizing Dose (TID) characterized up to 100krad(Si)
- TID RLAT/RHA up to 100krad(Si)
- Single-Event Latch-up (SEL) Immune to LET up to 75MeV-cm2/mg at 125℃
- Single-event transient (SET) characterized LET up to 75MeV-cm2/mg
SMD# 5962R2620601PXE
QML Class P
- Meets NASA ASTM E595 Outgassing Spec
- Military Temp Range (-55℃ to 125℃)
1-channel diode input
Current transfer ratio (CTR) at IF = 5mA, VCE = 5V: 95% to 164%
High collector-emitter voltage: VCE (max) = 30V
Robust SiO2 isolation barrier
- Isolation rating: 3750VRMS
- Working voltage: 500VRMS, 707VPK
- Surge capability: up to 10kV
Response time: 3µs (typical) at VCE = 10V, IC = 2mA, RL = 100Ω
Small 4-pin package (DFG)

Radiation Performance
- Total Ionizing Dose (TID) characterized up to 100krad(Si)
- TID RLAT/RHA up to 100krad(Si)
- Single-Event Latch-up (SEL) Immune to LET up to 75MeV-cm2/mg at 125℃
- Single-event transient (SET) characterized LET up to 75MeV-cm2/mg
SMD# 5962R2620601PXE
QML Class P
- Meets NASA ASTM E595 Outgassing Spec
- Military Temp Range (-55℃ to 125℃)
1-channel diode input
Current transfer ratio (CTR) at IF = 5mA, VCE = 5V: 95% to 164%
High collector-emitter voltage: VCE (max) = 30V
Robust SiO2 isolation barrier
- Isolation rating: 3750VRMS
- Working voltage: 500VRMS, 707VPK
- Surge capability: up to 10kV
Response time: 3µs (typical) at VCE = 10V, IC = 2mA, RL = 100Ω
Small 4-pin package (DFG)

The ISOS510-SPradiation-hardened device is a single-channel, current-driven, analog isolator with transistor output. The device offers significant reliability and performance advantages compared to other current-driven analog isolators, including high bandwidth, low turn-off delay, low power consumption, wider temperature ranges, flat current transfer ratio (CTR), and tight process controls resulting in small part-to-part skew. These performance advantages stay stable across radiation, temperature, and lifetime.

ISOS510-SP is offered in small a SOIC-4 package with 2.54mm pin pitch, supporting a 3.75kVRMS isolation rating . The high performance and reliability of ISOS510-SP enables these devices to be used in aerospace and defense applications such as feedback loops in isolated DC/DC modules, satellite propulsion power processing units, spacecraft battery management systems, and more.

The ISOS510-SPradiation-hardened device is a single-channel, current-driven, analog isolator with transistor output. The device offers significant reliability and performance advantages compared to other current-driven analog isolators, including high bandwidth, low turn-off delay, low power consumption, wider temperature ranges, flat current transfer ratio (CTR), and tight process controls resulting in small part-to-part skew. These performance advantages stay stable across radiation, temperature, and lifetime.

ISOS510-SP is offered in small a SOIC-4 package with 2.54mm pin pitch, supporting a 3.75kVRMS isolation rating . The high performance and reliability of ISOS510-SP enables these devices to be used in aerospace and defense applications such as feedback loops in isolated DC/DC modules, satellite propulsion power processing units, spacecraft battery management systems, and more.

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重要文件	類型	標題	格式選項	日期
*	Data sheet	ISOS510-SP Radiation Hardened , Current-Driven Analog Isolator With Transistor Output datasheet	PDF \| HTML	2026年 5月 4日

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