LMH5401-SP
- QMLV (QML class V) MIL-PRF-38535 qualified, SMD 5962R1721401VXC
- Radiation hardness assurance (RHA) up to 100-krad(Si) total ionizing dose (TID)
- Single event latch-up (SEL) immune to
LET = 85 MeV-cm2/mg - Qualified over the military temperature range (–55°C to 125°C)
- Gain bandwidth product (GBP): 6.5 GHz
- Excellent linearity performance:
DC to 2 GHz - Slew rate: 17,500 V/µs
- Low HD2, HD3 distortion
(500 mVPP, 100 Ω, SE-DE, Gv = 17 dB)(1):- 100 MHz: HD2 at –91 dBc, HD3 at –95 dBc
- 200 MHz: HD2 at –86 dBc, HD3 at –85 dBc
- 500 MHz: HD2 at –80 dBc, HD3 at –80 dBc
- 1 GHz: HD2 at –53 dBc, HD3 at –70 dBc
- 2 GHz: HD2 at –68 dBc, HD3 at –56 dBc
- Low IMD2, IMD3 distortion
(1 VPP, 100 Ω, SE-DE, Gv = 17 dB)(1):- 500 MHz: IMD2 at –90 dBc, IMD3 at –79 dBc
- 1 GHz: IMD2 at –80 dBc, IMD3 at –61 dBc
- 2 GHz: IMD2 at –64 dBc, IMD3 at –42 dBc
- High OIP2, OIP3. Gp = 8 dB(1)
- 500 MHz: OIP2 at 91 dBm, OIP3 at 47.7 dBm
- 1 GHz: OIP2 at 80 dBm, OIP3 at 37.5 dBm
- Input voltage noise: 1.25 nV/√Hz
- Input current noise: 3.5 pA/√Hz
- Supports single- and dual-supply operation
- Current consumption: 60 mA
- Power-down feature (1)
(1)Power Gain (Gp) = 8 dB; Voltage Gain (Gv) = 17 dB; RLtotal = 200 Ω. See Output Reference Nodes and Gain Nomenclature section for more details.
The LMH5401-SP is a very high-performance, radiation hardened, differential amplifier optimized for radio frequency (RF), intermediate frequency (IF), or high-speed, dc-coupled, time-domain applications. The device is ideal for dc- or ac-coupled applications that may require a single-ended-to-differential (SE-DE) conversion when driving an analog-to-digital converter (ADC). The LMH5401-SP generates very low levels of second- and third-order distortion when operating in SE-DE or differential-to-differential (DE-DE) mode.
The amplifier is optimized for use in both SE-DE and DE-DE systems. The device has unprecedented usable bandwidth from dc to 2 GHz. The LMH5401-SP can be used for SE-DE conversions in the signal chain without external baluns in a wide range of applications such as test and measurement, broadband communications, and high-speed data acquisition.
A common-mode reference input pin is provided to align the amplifier output common-mode with the ADC input requirements. Power supplies between 3.3 V and 5 V can be selected and dual-supply operation is supported when required by the application. A power-down feature is also available for power savings.
This level of performance is achieved at a very low power level of 300 mW when a 5-V supply is used. The device is fabricated in Texas Instruments’ advanced complementary BiCMOS process and is available in a space-saving, LCCC-14 package for higher performance.
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| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
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訂購與品質
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中持續性的可靠性監測
- 晶圓廠位置
- 組裝地點
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。