LMH5401-SP

現行

Radiation-hardened, QML-V, 6.5GHz Ultra Wideband Fully Differential Amplifier

產品詳細資料

Type Active Balun, RF FDA Frequency (min) (MHz) 0 Frequency (max) (MHz) 6500 Gain (typ) (dB) 12 Noise figure (typ) (dB) 12.5 OIP3 (typ) (dBm) 37.5 P1dB (typ) (dBm) 12 Frequency of harmonic distortion measurement (GHz) 1 3rd harmonic (dBc) -70 OIP2 (typ) (dBm) 54 2nd harmonic (dBc) -58 Current consumption (mA) 60 Number of channels 1 Operating temperature range (°C) -55 to 125 Rating Space Output enable Yes Radiation, SEL (MeV·cm2/mg) 85 Radiation, TID (typ) (rad) 100000
Type Active Balun, RF FDA Frequency (min) (MHz) 0 Frequency (max) (MHz) 6500 Gain (typ) (dB) 12 Noise figure (typ) (dB) 12.5 OIP3 (typ) (dBm) 37.5 P1dB (typ) (dBm) 12 Frequency of harmonic distortion measurement (GHz) 1 3rd harmonic (dBc) -70 OIP2 (typ) (dBm) 54 2nd harmonic (dBc) -58 Current consumption (mA) 60 Number of channels 1 Operating temperature range (°C) -55 to 125 Rating Space Output enable Yes Radiation, SEL (MeV·cm2/mg) 85 Radiation, TID (typ) (rad) 100000
LCCC-FC (FFK) 14 33 mm² (6 mm × 5.5 mm)
  • QMLV (QML class V) MIL-PRF-38535 qualified, SMD 5962R1721401VXC
    • Radiation hardness assurance (RHA) up to 100-krad(Si) total ionizing dose (TID)
    • Single event latch-up (SEL) immune to
      LET = 85 MeV-cm2/mg
    • Qualified over the military temperature range (–55°C to 125°C)
  • Gain bandwidth product (GBP): 6.5 GHz
  • Excellent linearity performance:
    DC to 2 GHz
  • Slew rate: 17,500 V/µs
  • Low HD2, HD3 distortion
    (500 mVPP, 100 Ω, SE-DE, Gv = 17 dB)(1):
    • 100 MHz: HD2 at –91 dBc, HD3 at –95 dBc
    • 200 MHz: HD2 at –86 dBc, HD3 at –85 dBc
    • 500 MHz: HD2 at –80 dBc, HD3 at –80 dBc
    • 1 GHz: HD2 at –53 dBc, HD3 at –70 dBc
    • 2 GHz: HD2 at –68 dBc, HD3 at –56 dBc
  • Low IMD2, IMD3 distortion
    (1 VPP, 100 Ω, SE-DE, Gv = 17 dB)(1):
    • 500 MHz: IMD2 at –90 dBc, IMD3 at –79 dBc
    • 1 GHz: IMD2 at –80 dBc, IMD3 at –61 dBc
    • 2 GHz: IMD2 at –64 dBc, IMD3 at –42 dBc
  • High OIP2, OIP3. Gp = 8 dB(1)
    • 500 MHz: OIP2 at 91 dBm, OIP3 at 47.7 dBm
    • 1 GHz: OIP2 at 80 dBm, OIP3 at 37.5 dBm
  • Input voltage noise: 1.25 nV/√Hz
  • Input current noise: 3.5 pA/√Hz
  • Supports single- and dual-supply operation
  • Current consumption: 60 mA
  • Power-down feature (1)

(1)Power Gain (Gp) = 8 dB; Voltage Gain (Gv) = 17 dB; RLtotal = 200 Ω. See Output Reference Nodes and Gain Nomenclature section for more details.

  • QMLV (QML class V) MIL-PRF-38535 qualified, SMD 5962R1721401VXC
    • Radiation hardness assurance (RHA) up to 100-krad(Si) total ionizing dose (TID)
    • Single event latch-up (SEL) immune to
      LET = 85 MeV-cm2/mg
    • Qualified over the military temperature range (–55°C to 125°C)
  • Gain bandwidth product (GBP): 6.5 GHz
  • Excellent linearity performance:
    DC to 2 GHz
  • Slew rate: 17,500 V/µs
  • Low HD2, HD3 distortion
    (500 mVPP, 100 Ω, SE-DE, Gv = 17 dB)(1):
    • 100 MHz: HD2 at –91 dBc, HD3 at –95 dBc
    • 200 MHz: HD2 at –86 dBc, HD3 at –85 dBc
    • 500 MHz: HD2 at –80 dBc, HD3 at –80 dBc
    • 1 GHz: HD2 at –53 dBc, HD3 at –70 dBc
    • 2 GHz: HD2 at –68 dBc, HD3 at –56 dBc
  • Low IMD2, IMD3 distortion
    (1 VPP, 100 Ω, SE-DE, Gv = 17 dB)(1):
    • 500 MHz: IMD2 at –90 dBc, IMD3 at –79 dBc
    • 1 GHz: IMD2 at –80 dBc, IMD3 at –61 dBc
    • 2 GHz: IMD2 at –64 dBc, IMD3 at –42 dBc
  • High OIP2, OIP3. Gp = 8 dB(1)
    • 500 MHz: OIP2 at 91 dBm, OIP3 at 47.7 dBm
    • 1 GHz: OIP2 at 80 dBm, OIP3 at 37.5 dBm
  • Input voltage noise: 1.25 nV/√Hz
  • Input current noise: 3.5 pA/√Hz
  • Supports single- and dual-supply operation
  • Current consumption: 60 mA
  • Power-down feature (1)

(1)Power Gain (Gp) = 8 dB; Voltage Gain (Gv) = 17 dB; RLtotal = 200 Ω. See Output Reference Nodes and Gain Nomenclature section for more details.

The LMH5401-SP is a very high-performance, radiation hardened, differential amplifier optimized for radio frequency (RF), intermediate frequency (IF), or high-speed, dc-coupled, time-domain applications. The device is ideal for dc- or ac-coupled applications that may require a single-ended-to-differential (SE-DE) conversion when driving an analog-to-digital converter (ADC). The LMH5401-SP generates very low levels of second- and third-order distortion when operating in SE-DE or differential-to-differential (DE-DE) mode.



The amplifier is optimized for use in both SE-DE and DE-DE systems. The device has unprecedented usable bandwidth from dc to 2 GHz. The LMH5401-SP can be used for SE-DE conversions in the signal chain without external baluns in a wide range of applications such as test and measurement, broadband communications, and high-speed data acquisition.

A common-mode reference input pin is provided to align the amplifier output common-mode with the ADC input requirements. Power supplies between 3.3 V and 5 V can be selected and dual-supply operation is supported when required by the application. A power-down feature is also available for power savings.

This level of performance is achieved at a very low power level of 300 mW when a 5-V supply is used. The device is fabricated in Texas Instruments’ advanced complementary BiCMOS process and is available in a space-saving, LCCC-14 package for higher performance.

The LMH5401-SP is a very high-performance, radiation hardened, differential amplifier optimized for radio frequency (RF), intermediate frequency (IF), or high-speed, dc-coupled, time-domain applications. The device is ideal for dc- or ac-coupled applications that may require a single-ended-to-differential (SE-DE) conversion when driving an analog-to-digital converter (ADC). The LMH5401-SP generates very low levels of second- and third-order distortion when operating in SE-DE or differential-to-differential (DE-DE) mode.



The amplifier is optimized for use in both SE-DE and DE-DE systems. The device has unprecedented usable bandwidth from dc to 2 GHz. The LMH5401-SP can be used for SE-DE conversions in the signal chain without external baluns in a wide range of applications such as test and measurement, broadband communications, and high-speed data acquisition.

A common-mode reference input pin is provided to align the amplifier output common-mode with the ADC input requirements. Power supplies between 3.3 V and 5 V can be selected and dual-supply operation is supported when required by the application. A power-down feature is also available for power savings.

This level of performance is achieved at a very low power level of 300 mW when a 5-V supply is used. The device is fabricated in Texas Instruments’ advanced complementary BiCMOS process and is available in a space-saving, LCCC-14 package for higher performance.

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開發板

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開發板

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類比輸入路徑可選擇將 6.5 GHz LMH5401-SP 做為單端至差動增益區塊,或繞過放大器並以差動訊號驅動 ADC。該放大器後接 12 位元、雙 1.6-GSPS 或單 3.2-GSPS ADC12D1620QML-SP。這些高效能元件皆有必要的電源、微控制器和溫度感測器裝置支援。

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模擬型號

LMH5401-SP TINA-TI Reference Design

SBOMAM1.TSC (382 KB) - TINA-TI 參考設計
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模擬型號

LMH5401-SP TINA-TI Spice Model

SBOMAM0.ZIP (10 KB) - TINA-TI Spice 模型
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計算工具

RF-CASCADE-CALC-TOOL — TI RF 級聯計算機

A browser-based RF lineup analysis tool supporting up to 10 stages. Computes gain, NF, OIP3, OIP2, OP1dB, and derived metrics. Features dual-axis Plotly charts, P1dB saturation detection, and export to CSV
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參考設計

TIDA-010191 — 航太級多通道 JESD204B 15-GHz 時脈參考設計

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封裝 針腳 CAD 符號、佔位空間與 3D 模型
LCCC-FC (FFK) 14 Ultra Librarian

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