產品詳細資料

Current consumption (mA) 60 Frequency (min) (MHz) 0 Frequency (max) (MHz) 6500 Gain (typ) (dB) 12 Noise figure (typ) (dB) 9.6 OIP3 (typ) (dBm) 47.7 P1dB (typ) (dBm) 12 Number of channels 1 Operating temperature range (°C) -55 to 125 Type Active Balun, RF FDA Rating Space
Current consumption (mA) 60 Frequency (min) (MHz) 0 Frequency (max) (MHz) 6500 Gain (typ) (dB) 12 Noise figure (typ) (dB) 9.6 OIP3 (typ) (dBm) 47.7 P1dB (typ) (dBm) 12 Number of channels 1 Operating temperature range (°C) -55 to 125 Type Active Balun, RF FDA Rating Space
LCCC-FC (FFK) 14 33 mm² 6 x 5.5
  • QMLV (QML class V) MIL-PRF-38535 qualified, SMD 5962R1721401VXC
    • Radiation hardness assurance (RHA) up to 100-krad(Si) total ionizing dose (TID)
    • Single event latch-up (SEL) immune to
      LET = 85 MeV-cm2/mg
    • Qualified over the military temperature range (–55°C to 125°C)
  • Gain bandwidth product (GBP): 6.5 GHz
  • Excellent linearity performance:
    DC to 2 GHz
  • Slew rate: 17,500 V/µs
  • Low HD2, HD3 distortion
    (500 mVPP, 100 Ω, SE-DE, Gv = 17 dB)(1):
    • 100 MHz: HD2 at –91 dBc, HD3 at –95 dBc
    • 200 MHz: HD2 at –86 dBc, HD3 at –85 dBc
    • 500 MHz: HD2 at –80 dBc, HD3 at –80 dBc
    • 1 GHz: HD2 at –53 dBc, HD3 at –70 dBc
    • 2 GHz: HD2 at –68 dBc, HD3 at –56 dBc
  • Low IMD2, IMD3 distortion
    (1 VPP, 100 Ω, SE-DE, Gv = 17 dB)(1):
    • 500 MHz: IMD2 at –90 dBc, IMD3 at –79 dBc
    • 1 GHz: IMD2 at –80 dBc, IMD3 at –61 dBc
    • 2 GHz: IMD2 at –64 dBc, IMD3 at –42 dBc
  • High OIP2, OIP3. Gp = 8 dB(1)
    • 500 MHz: OIP2 at 91 dBm, OIP3 at 47.7 dBm
    • 1 GHz: OIP2 at 80 dBm, OIP3 at 37.5 dBm
  • Input voltage noise: 1.25 nV/√Hz
  • Input current noise: 3.5 pA/√Hz
  • Supports single- and dual-supply operation
  • Current consumption: 60 mA
  • Power-down feature (1)

(1)Power Gain (Gp) = 8 dB; Voltage Gain (Gv) = 17 dB; RLtotal = 200 Ω. See Output Reference Nodes and Gain Nomenclature section for more details.

  • QMLV (QML class V) MIL-PRF-38535 qualified, SMD 5962R1721401VXC
    • Radiation hardness assurance (RHA) up to 100-krad(Si) total ionizing dose (TID)
    • Single event latch-up (SEL) immune to
      LET = 85 MeV-cm2/mg
    • Qualified over the military temperature range (–55°C to 125°C)
  • Gain bandwidth product (GBP): 6.5 GHz
  • Excellent linearity performance:
    DC to 2 GHz
  • Slew rate: 17,500 V/µs
  • Low HD2, HD3 distortion
    (500 mVPP, 100 Ω, SE-DE, Gv = 17 dB)(1):
    • 100 MHz: HD2 at –91 dBc, HD3 at –95 dBc
    • 200 MHz: HD2 at –86 dBc, HD3 at –85 dBc
    • 500 MHz: HD2 at –80 dBc, HD3 at –80 dBc
    • 1 GHz: HD2 at –53 dBc, HD3 at –70 dBc
    • 2 GHz: HD2 at –68 dBc, HD3 at –56 dBc
  • Low IMD2, IMD3 distortion
    (1 VPP, 100 Ω, SE-DE, Gv = 17 dB)(1):
    • 500 MHz: IMD2 at –90 dBc, IMD3 at –79 dBc
    • 1 GHz: IMD2 at –80 dBc, IMD3 at –61 dBc
    • 2 GHz: IMD2 at –64 dBc, IMD3 at –42 dBc
  • High OIP2, OIP3. Gp = 8 dB(1)
    • 500 MHz: OIP2 at 91 dBm, OIP3 at 47.7 dBm
    • 1 GHz: OIP2 at 80 dBm, OIP3 at 37.5 dBm
  • Input voltage noise: 1.25 nV/√Hz
  • Input current noise: 3.5 pA/√Hz
  • Supports single- and dual-supply operation
  • Current consumption: 60 mA
  • Power-down feature (1)

(1)Power Gain (Gp) = 8 dB; Voltage Gain (Gv) = 17 dB; RLtotal = 200 Ω. See Output Reference Nodes and Gain Nomenclature section for more details.

The LMH5401-SP is a very high-performance, radiation hardened, differential amplifier optimized for radio frequency (RF), intermediate frequency (IF), or high-speed, dc-coupled, time-domain applications. The device is ideal for dc- or ac-coupled applications that may require a single-ended-to-differential (SE-DE) conversion when driving an analog-to-digital converter (ADC). The LMH5401-SP generates very low levels of second- and third-order distortion when operating in SE-DE or differential-to-differential (DE-DE) mode.



The amplifier is optimized for use in both SE-DE and DE-DE systems. The device has unprecedented usable bandwidth from dc to 2 GHz. The LMH5401-SP can be used for SE-DE conversions in the signal chain without external baluns in a wide range of applications such as test and measurement, broadband communications, and high-speed data acquisition.

A common-mode reference input pin is provided to align the amplifier output common-mode with the ADC input requirements. Power supplies between 3.3 V and 5 V can be selected and dual-supply operation is supported when required by the application. A power-down feature is also available for power savings.

This level of performance is achieved at a very low power level of 300 mW when a 5-V supply is used. The device is fabricated in Texas Instruments’ advanced complementary BiCMOS process and is available in a space-saving, LCCC-14 package for higher performance.

The LMH5401-SP is a very high-performance, radiation hardened, differential amplifier optimized for radio frequency (RF), intermediate frequency (IF), or high-speed, dc-coupled, time-domain applications. The device is ideal for dc- or ac-coupled applications that may require a single-ended-to-differential (SE-DE) conversion when driving an analog-to-digital converter (ADC). The LMH5401-SP generates very low levels of second- and third-order distortion when operating in SE-DE or differential-to-differential (DE-DE) mode.



The amplifier is optimized for use in both SE-DE and DE-DE systems. The device has unprecedented usable bandwidth from dc to 2 GHz. The LMH5401-SP can be used for SE-DE conversions in the signal chain without external baluns in a wide range of applications such as test and measurement, broadband communications, and high-speed data acquisition.

A common-mode reference input pin is provided to align the amplifier output common-mode with the ADC input requirements. Power supplies between 3.3 V and 5 V can be selected and dual-supply operation is supported when required by the application. A power-down feature is also available for power savings.

This level of performance is achieved at a very low power level of 300 mW when a 5-V supply is used. The device is fabricated in Texas Instruments’ advanced complementary BiCMOS process and is available in a space-saving, LCCC-14 package for higher performance.

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類型 標題 日期
* Data sheet LMH5401-SP radiation hardened 6.5-GHz, low-noise, low-power, gain-configurable fully differential amplifier datasheet (Rev. B) PDF | HTML 2019年 2月 28日
* Radiation & reliability report Single-Event Effects Test Report of the LMH5401-SP (Rev. B) 2018年 11月 26日
* Radiation & reliability report LMH5401-SP (5962R1721401VXC) Neutron Displacement Damage Characterization 2018年 9月 7日
* Radiation & reliability report LMH5401-SP TID Radiation Report (Rev. A) 2018年 7月 31日
* SMD LMH5401-SP SMD 5962-17214 2018年 5月 3日
More literature TI Engineering Evaluation Units vs. MIL-PRF-38535 QML Class V Processing (Rev. A) 2023年 8月 31日
Application note Heavy Ion Orbital Environment Single-Event Effects Estimations (Rev. A) PDF | HTML 2022年 11月 17日
Application note Single-Event Effects Confidence Interval Calculations (Rev. A) PDF | HTML 2022年 10月 19日
Application brief Analog Front-End Design With Texas Instruments’ Tooling Landscape PDF | HTML 2022年 3月 7日
Selection guide TI Space Products (Rev. I) 2022年 3月 3日
Application note Rad-hardened FDA as Clock Buffer in Communication and Radar Payloads (Rev. A) 2019年 8月 2日
E-book Radiation Handbook for Electronics (Rev. A) 2019年 5月 21日
User guide TSW12D1620EVM-CVAL User's Guide (Rev. A) 2019年 1月 29日
EVM User's guide LMH5401EVM-CVAL Evaluation Module (EVM) (Rev. A) 2018年 9月 21日

設計與開發

如需其他條款或必要資源,請按一下下方的任何標題以檢視詳細頁面 (如有)。

開發板

LMH5401EVM-CVAL — LMH5401-SP 耐輻射 (RHA) 寬頻全差動放大器評估模組

The LMH5401EVM-CVAL is an evaluation module for the single LMH5401FFK/EM amplifier in a 14 pin LCCC high performance RF package. This evaluation module is designed to quickly and easily demonstrate the functionality and versatility of the amplifier.

The EVM is ready to connect to power, signal (...)

使用指南: PDF
TI.com 無法提供
開發板

TSW12D1620EVM-CVAL — ADC12D1620QML-SP 航太級寬頻接收器評估模組

TSW12D1620EVM-CVAL 是 1.5-GHz 寬頻接收器評估模組 (EVM),其中包括放大器、類比轉數位轉換器 (ADC)、時脈、溫度感測器、微控制器及電源解決方案的陶瓷工程模型。電路板最適合從近 DC 到 1.5 GHz 的 IF/RF 頻率數位化。

類比輸入路徑可選擇將 6.5-GHz LMH5401-SP 做為單端至差動增益區塊,或繞過放大器並以差動訊號驅動 ADC。放大器後則為 12 位元、雙 1.6-GSPS 或單 3.2-GSPS ADC12D1620QML-SP。這些高效能元件皆有必要的電源、微控制器和溫度感測器裝置支援。

TSW12D1620EVM-CVAL (...)

使用指南: PDF
TI.com 無法提供
模擬型號

LMH5401-SP TINA-TI Reference Design

SBOMAM1.TSC (382 KB) - TINA-TI Reference Design
模擬型號

LMH5401-SP TINA-TI Spice Model

SBOMAM0.ZIP (10 KB) - TINA-TI Spice Model
參考設計

TIDA-010191 — 航太級多通道 JESD204B 15-GHz 時脈參考設計

相位陣列天線和數位波束成形技術,是提高未來航太雷達成像和寬頻衛星通訊系統的性能的關鍵技術。數位波束成形與類比波束成形不同,通常每個天線元件需要一套資料轉換器。這些轉換器需要具有具體定義相位關係的時鐘。此參考設計展示如何透過已定義及可調整相位關係,產生低雜訊 MHz 至 GHz 時脈訊號。在發生單一事件後,甚至可能恢復時脈階段。透過操作兩個 ADC12DJ3200QML-SP 評估模組,及在 3.2 GHz 時其對應之 FPGA 架構擷取平台,以及 10-ps 板對板偏斜的情況,藉此來展示 JESD204B 支援。
Design guide: PDF
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LCCC-FC (FFK) 14 檢視選項

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