SN54SC1G175-SEP

現行

具有清除功能的耐輻射單正反器

產品詳細資料

Operating temperature range (°C) to Rating Space
Operating temperature range (°C) to Rating Space
SOT-23 (DBV) 6 8.12 mm² 2.9 x 2.8
  • VID V62/26610
  • Radiation - Total Ionizing Dose (TID):
    • TID characterized up to 50krad(Si)
    • TID performance assurance up to 30krad(Si)
    • Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 30krad(Si)
  • Radiation - Single-Event Effects (SEE):
    • Single Event Latch-Up (SEL) immune up to 50MeV-cm2/mg at 125°C
    • Single Event Transient (SET) characterized up to LET = 50MeV-cm2/mg
  • Wide operating range of 1.2V to 5.5V

  • 5.5V tolerant input pins
  • Supports standard pinouts
  • Up to 150Mbps with 5V or 3.3V VCC
  • Latch-up performance exceeds 100mA per JESD 78
  • Space enhanced plastic:
    • Supports Defense and Aerospace Applications
    • Controlled baseline
    • Au bondwire and NiPdAu lead finish
    • Meets NASA ASTM E595 outgassing specification
    • One fabrication, assembly, and test site
    • Extended product life cycle
    • Product traceability
  • VID V62/26610
  • Radiation - Total Ionizing Dose (TID):
    • TID characterized up to 50krad(Si)
    • TID performance assurance up to 30krad(Si)
    • Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 30krad(Si)
  • Radiation - Single-Event Effects (SEE):
    • Single Event Latch-Up (SEL) immune up to 50MeV-cm2/mg at 125°C
    • Single Event Transient (SET) characterized up to LET = 50MeV-cm2/mg
  • Wide operating range of 1.2V to 5.5V

  • 5.5V tolerant input pins
  • Supports standard pinouts
  • Up to 150Mbps with 5V or 3.3V VCC
  • Latch-up performance exceeds 100mA per JESD 78
  • Space enhanced plastic:
    • Supports Defense and Aerospace Applications
    • Controlled baseline
    • Au bondwire and NiPdAu lead finish
    • Meets NASA ASTM E595 outgassing specification
    • One fabrication, assembly, and test site
    • Extended product life cycle
    • Product traceability

The SN54SC1G175-SEP device is a single D-type flip-flop with asynchronous clear (CLR) input. When CLR is HIGH, data from the input pin (D) transfers to the output pin (Q) on the clock’s (CLK) rising edge. When CLR is LOW, the Q is forced into the LOW state, regardless of the clock edge or data on D.

The SN54SC1G175-SEP device is a single D-type flip-flop with asynchronous clear (CLR) input. When CLR is HIGH, data from the input pin (D) transfers to the output pin (Q) on the clock’s (CLK) rising edge. When CLR is LOW, the Q is forced into the LOW state, regardless of the clock edge or data on D.

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技術文件

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重要文件 類型 標題 格式選項 日期
* Data sheet SN54SC1G175-SEP Single D-Type Flip-Flop With Asynchronous Clear datasheet PDF | HTML 2026年 2月 20日
* Radiation & reliability report SN54SC1G175-SEP Production Flow and Reliability Report PDF | HTML 2026年 2月 6日
* Radiation & reliability report SN54SC1G175-SEP Single-Event Effects (SEE) Radiation Report PDF | HTML 2026年 2月 6日
* Radiation & reliability report SN54SC1G175-SEP Total Ionizing Dose (TID) Report 2026年 2月 6日

設計與開發

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開發板

5-8-LOGIC-EVM — 適用於 5 針腳至 8 針腳 DCK、DCT、DCU、DRL 和 DBV 封裝的通用邏輯評估模組

靈活的 EVM 旨在支援任何針腳數為 5 至 8 支且採用 DCK、DCT、DCU、DRL 或 DBV 封裝的裝置。
使用指南: PDF
TI.com 無法提供
封裝 針腳 CAD 符號、佔位空間與 3D 模型
SOT-23 (DBV) 6 Ultra Librarian

訂購與品質

內含資訊:
  • RoHS
  • REACH
  • 產品標記
  • 鉛塗層/球物料
  • MSL 等級/回焊峰值
  • MTBF/FIT 估算值
  • 材料內容
  • 認證摘要
  • 進行中的可靠性監測
內含資訊:
  • 晶圓廠位置
  • 組裝地點

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