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SN74CBT3125C

現行

具有 –2V 未達目標保護的 5V、1:1 (SPST)、4 通道 FET 匯流排開關

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產品規格表

SN74CBT3125C

現行
產品規格表 立即訂購

產品詳細資料

Configuration 1:1 SPST Number of channels 4 Power supply voltage - single (V) 5 Protocols Analog, I2C, I2S, JTAG, RGMII, SPI, TDM, UART Ron (typ) (Ω) 3 CON (typ) (pF) 12.5 ON-state leakage current (max) (µA) 10 Bandwidth (MHz) 200 Operating temperature range (°C) -40 to 85 Features Undershoot protection Input/output continuous current (max) (mA) 128 Rating Catalog Drain supply voltage (max) (V) 5.5 Supply voltage (max) (V) 5.5
Configuration 1:1 SPST Number of channels 4 Power supply voltage - single (V) 5 Protocols Analog, I2C, I2S, JTAG, RGMII, SPI, TDM, UART Ron (typ) (Ω) 3 CON (typ) (pF) 12.5 ON-state leakage current (max) (µA) 10 Bandwidth (MHz) 200 Operating temperature range (°C) -40 to 85 Features Undershoot protection Input/output continuous current (max) (mA) 128 Rating Catalog Drain supply voltage (max) (V) 5.5 Supply voltage (max) (V) 5.5
SOIC (D) 14 51.9 mm² 8.65 x 6 SSOP (DB) 14 48.36 mm² 6.2 x 7.8 SSOP (DBQ) 16 29.4 mm² 4.9 x 6 TSSOP (PW) 14 32 mm² 5 x 6.4 VQFN (RGY) 14 12.25 mm² 3.5 x 3.5
  • Undershoot Protection for Off-Isolation on A and B Ports Up To –2 V
  • Bidirectional Data Flow, With Near-Zero Propagation Delay
  • Low On-State Resistance (ron) Characteristics
          (ron = 3 Typical)
  • Low Input/Output Capacitance Minimizes Loading and Signal Distortion
         (Cio(OFF) = 5 pF Typical)
  • Data and Control Inputs Provide Undershoot Clamp Diodes
  • Low Power Consumption
         (ICC = 3 µA Max)
  • VCC Operating Range From 4 V to 5.5 V
  • Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
  • Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Both Digital and Analog Applications: USB Interface, Bus Isolation, Low-Distortion Signal Gating
  • Undershoot Protection for Off-Isolation on A and B Ports Up To –2 V
  • Bidirectional Data Flow, With Near-Zero Propagation Delay
  • Low On-State Resistance (ron) Characteristics
          (ron = 3 Typical)
  • Low Input/Output Capacitance Minimizes Loading and Signal Distortion
         (Cio(OFF) = 5 pF Typical)
  • Data and Control Inputs Provide Undershoot Clamp Diodes
  • Low Power Consumption
         (ICC = 3 µA Max)
  • VCC Operating Range From 4 V to 5.5 V
  • Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
  • Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Both Digital and Analog Applications: USB Interface, Bus Isolation, Low-Distortion Signal Gating

The SN74CBT3125C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBT3125C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state.

The SN74CBT3125C is organized as four 1-bit bus switches with separate output-enable (1OE\, 2OE\, 3OE\, 4OE\) inputs. It can be used as four 1-bit bus switches or as one 4-bit bus switch. When OE\ is low, the associated 1-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE\ is high, the associated 1-bit bus switch is OFF, and the high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down.

To ensure the high-impedance state during power up or power down, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN74CBT3125C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBT3125C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state.

The SN74CBT3125C is organized as four 1-bit bus switches with separate output-enable (1OE\, 2OE\, 3OE\, 4OE\) inputs. It can be used as four 1-bit bus switches or as one 4-bit bus switch. When OE\ is low, the associated 1-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE\ is high, the associated 1-bit bus switch is OFF, and the high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down.

To ensure the high-impedance state during power up or power down, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
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類型 標題 日期
* Data sheet SN74CBT3125C datasheet (Rev. A) 2003年 10月 15日
Application note Selecting the Correct Texas Instruments Signal Switch (Rev. E) PDF | HTML 2022年 6月 2日
Application note Multiplexers and Signal Switches Glossary (Rev. B) PDF | HTML 2021年 12月 1日
Application note CBT-C, CB3T, and CB3Q Signal-Switch Families (Rev. C) PDF | HTML 2021年 11月 19日
Application brief Eliminate Power Sequencing with Powered-off Protection Signal Switches (Rev. C) PDF | HTML 2021年 1月 6日
Selection guide Little Logic Guide 2018 (Rev. G) 2018年 7月 6日
Selection guide Logic Guide (Rev. AB) 2017年 6月 12日
Application note Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) 2015年 12月 2日
User guide LOGIC Pocket Data Book (Rev. B) 2007年 1月 16日
More literature Digital Bus Switch Selection Guide (Rev. A) 2004年 11月 10日
Application note Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 2004年 7月 8日
User guide Signal Switch Data Book (Rev. A) 2003年 11月 14日
Application note Bus FET Switch Solutions for Live Insertion Applications 2003年 2月 7日

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介面轉接器

LEADED-ADAPTER1 — 適用於快速測試 TI 的 5、8、10、16 及 24 針腳引線封裝的表面貼裝至 DIP 接頭適配器

EVM-LEADED1 板可用於快速測試和搭建 TI 常見的有引腳封裝  此電路板具備板上配置，可將 TI 的 D、DBQ、DCT、DCU、DDF、DGS、DGV 和 PW 表面黏著封裝轉換為 100mil DIP 排針。     

使用指南: PDF
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模擬型號

SN74CBT3125C HSPICE Model (Rev. A)

SCDJ018A.ZIP (62 KB) - HSpice Model
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模擬型號

SN74CBT3125C IBIS Model

SCDM046.ZIP (27 KB) - IBIS Model
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封裝 針腳 CAD 符號、佔位空間與 3D 模型
SOIC (D) 14 Ultra Librarian
SSOP (DB) 14 Ultra Librarian
SSOP (DBQ) 16 Ultra Librarian
TSSOP (PW) 14 Ultra Librarian
VQFN (RGY) 14 Ultra Librarian
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